FDS6890A_NL [FAIRCHILD]
Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | FDS6890A_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 1999
FDS6890A
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
• 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V
RDS(ON = 0.022 Ω @ VGS = 2.5 V.
)
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
Applications
low RDS(ON
.
)
• DC/DC converter
• Motor drives
• High power and current handling capability.
D2
D2
4
5
6
7
8
D1
D1
3
2
1
G2
S2
G1
1
pin
S1
SO-8
T
A=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
20
V
VGSS
ID
V
A
±8
7.5
(Note 1a)
20
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2.0
W
(Note 1a)
(Note 1b)
1.6
1.0
(Note 1c)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
°
TJ, Tstg
C
Thermal Characteristics
(Note 1a)
(Note 1)
Thermal Resistance, Junction-to-Ambient
78
40
90
RθJA
°C/W
Thermal Resistance, Junction-to-Case
°
RθJC
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6890A
FDS6890A
13
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDS6890A Rev. C
Electrical Characteristics
TA = 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
20
V
µ
GS = 0 V, ID = 250 A
V
Breakdown Voltage Temperature
Coefficient
14
∆
DSS
µ
°
°
mV/ C
BV
∆
ID = 250 A, Referenced to 25 C
TJ
IDSS
IGSSF
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
1
µ
A
Gate-Body Leakage Current,
Forward
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -8 V, VDS = 0 V
-100
1.5
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.5
20
0.8
V
µ
DS = VGS, ID = 250 A
V
Gate Threshold Voltage
Temperature Coefficient
-3.5
∆
GS(th)
µ
°
°
V
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID =7.5 A
VGS = 4.5 V, ID =7.5 A, TJ =125 C
VGS = 2.5 V, ID =6.5 A
VGS = 10 V, VDS = 5 V
0.013 0.018
0.021 0.034
0.016 0.022
Ω
°
ID(on)
gFS
On-State Drain Current
A
S
Forward Transconductance
VDS = 5 V, ID = 7.5 A
35
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
2130
545
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
270
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD = 10 V, ID = 1 A,
13
26
65
23
23
3.2
4.4
24
42
90
37
32
ns
ns
Ω
VGS = 4.5 V, RGEN = 6
ns
ns
Qg
VDS = 10 V, ID = 7.5 A,
VGS = 4.5 V,
nC
nC
nC
Qgs
Qgd
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
0.65
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum pad.
b) 125° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
FDS6890A Rev. C
Typical Characteristics (continued)
1.8
1.6
1.4
1.2
1
30
VGS=4.5V
2.5V
2.0V
VGS =1.8V
24
2.0V
18
1.8V
2.5V
12
3.0V
3.5V
20
6
1.5V
4.5
0
0.8
0
0.5
1
1.5
2
2.5
3
0
5
10
15
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.05
ID = 7.5A
ID =3.8A
1.6
1.4
1.2
1
VGS = 4.5V
0.04
0.03
0.02
0.01
0
TA = 125oC
TA = 25oC
0.8
0.6
0.4
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
withTemperature.
30
100
TA = -55oC
25oC
VGS=0
VDS = 5V
125oC
10
24
18
12
6
TJ=125oC
1
25oC
0.1
-55oC
0.01
0.001
0
0.0001
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
V
SD, BODY DIODE VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6890A Rev. C
Typical Characteristics (continued)
5
3200
2400
1600
800
0
f = 1 MHz
VGS = 0 V
ID = 7.5A
VDS = 5V
4
3
2
1
0
10V
15V
CISS
COSS
CRSS
0
6
12
18
24
30
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
30
RDS(ON) LIMIT
100µs
1ms
SINGLE PULSE
25
20
15
10
5
R JA =135 C/W
θ
10
1
10ms
100ms
1s
10s
A
T
= 25 C
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.1
0.01
0
0.01
0.1
0.5
10
50 100
300
0.1
1
10
100
SINGLE PULSE TIME (SEC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D =0.5
0.5
0.2
0.2
R
JA ( t) = r( )t
* R
JA
θ
θ
0.1
0.1
JA
R
= 135C/W
θ
0. 0 5
0.05
P(pk)
0. 0 2
0.02
0. 0 1
t
1
t
2
0.01
S in g le P ul
s
e
T
- T = P * R
(t)
JA
0.005
J
A
θ
D u t
y
C y cl e, D = t /t
2
1
0.002
0.001
00. 001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6890A Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
VCX™
QS™
FACT Quiet Series™
FAST
FASTr™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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