FDS3890L86Z [FAIRCHILD]
Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | FDS3890L86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2001
FDS3890
80V N-Channel Dual PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
4.7 A, 80 V.
RDS(ON) = 44 mΩ @ VGS = 10 V
DS(ON) = 50 mΩ @ VGS = 6 V
R
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D1
D1
5
6
7
8
4
3
2
1
D2
Q1
Q2
D2
G1
S1
SO-8
G2
S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
80
V
V
A
VGSS
Gate-Source Voltage
± 20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
4.7
20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
PD
W
(Note 1a)
(Note 1b)
(Note 1c)
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
RθJA
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3890
FDS3890
13’’
12mm
2500 units
FDS3890 Rev B(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 40 V, ID = 4.7 A
175
4.7
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
80
V
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
86
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 64 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
1
µA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
2.3
–6
4
V
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 6.0 V,
ID = 4.7 A
ID = 4.4 A
34
37
60
44
50
82
VGS = 10 V, ID = 4.7 A, TJ = 125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 5 V
ID = 4.7 A
20
A
S
Forward Transconductance
24
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1180
171
50
pF
pF
pF
VDS = 40 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
8
20
16
50
25
35
ns
ns
VDD =40 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
26
12
25
4.5
5.8
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
V
V
DS = 40 V,
GS = 10 V
ID = 4.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
Drain–Source Diode Forward
VSD
V
GS = 0 V, IS = 1.3 A
(Note 2)
0.74
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS3890 Rev B(W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
20
VGS = 10V 5.0V
4.0V
16
12
8
VGS = 4.0V
4.5V
5.0V
6.0V
10V
3.5V
4
0.8
0
0
4
8
12
16
20
0
1
2
3
4
175
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
2.2
ID = 2.4 A
ID = 4.7A
VGS = 10V
1.8
1.4
1
0.075
0.05
0.025
0
TA = 125oC
TA = 25oC
0.6
0.2
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
VDS = 5V
10
1
TA = 125oC
25oC
25oC
-55oC
0.1
TA = 125oC
0.01
0.001
4
-55oC
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3890 Rev B(W)
Typical Characteristics
10
2000
1500
1000
500
0
f = 1MHz
VGS = 0 V
ID = 4.7A
VDS = 10V
8
20V
40V
CISS
6
4
2
0
COSS
CRSS
0
6
12
18
24
30
0
20
40
60
80
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
RDS(ON) LIMIT
100
s
µ
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
0.01
T
A = 25oC
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 135°C/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3890 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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