FDPF3860TYDTU [FAIRCHILD]
N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL;
| 型号： | FDPF3860TYDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL |
| 文件： | 总8页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2013
FDPF3860T
N-Channel PowerTrench MOSFET
100 V, 20 A, 38.2 mΩ
®
Features
Description
•
•
•
•
RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
•
•
•
•
•
Consumer Appliances
•
•
High Power and Current Handling Capability
RoHS Compliant
LCD/LED/PDP TV
Synchronous Rectification
Uninterruptible Power Supply
Micro Solar Inverter
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDPF3860T
Unit
V
Drain to Source Voltage
Gate to Source Voltage
100
±20
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
20
ID
Drain Current
A
12.7
80
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
278
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
3.4
mJ
V/ns
W
W/oC
oC
15
(TC = 25oC)
- Derate Above 25oC
33.8
0.27
-55 to +150
300
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
FDPF3860T
3.7
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
oC/W
62.5
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF3860T
FDPF3860T
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 80 V, VGS = 0 V
100
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.1
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 48 V, TC = 150oC
500
±100
VGS = ±20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 5.9 A
VDS = 10 V, ID = 5.9 A
2.5
-
4.5
38.2
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
29.1
21
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
1350
145
60
1800
190
90
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
-
-
-
15
17
24
7
40
45
60
25
35
-
ns
ns
VDD = 50 V, ID = 5.9 A,
Turn-On Rise Time
V
GS = 10 V, RG = 6 Ω
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
(Note 4)
(Note 4)
Qg(tot)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
23
7
nC
nC
nC
V
V
DS = 80 V, ID = 5.9 A,
GS = 10 V
8
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
20
80
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 5.9 A
-
V
40
56
ns
nC
VGS = 0 V, ISD = 5.9 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 16 mH, I = 5.9 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 5.9 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
100
10
1
150oC
-55oC
25oC
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
0.1
1
10
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.14
0.12
0.10
0.08
200
100
10
1
150oC
25oC
0.06
VGS = 10V
*Notes:
1. VGS = 0V
0.04
0.02
VGS = 20V
*Note: TJ = 25oC
75 100
2. 250μs Pulse Test
0
25
50
0.0
0.4
0.8
1.2
1.4
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
VDS = 80V
DS = 50V
DS = 25V
Ciss
= C
gd
V
V
8
6
4
2
0
1500
1000
500
0
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
*Note: ID = 5.9A
20
0.1
1
10
30
0
5
10
15
25
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 250μA
2. ID = 5.9A
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
25
20
15
10
5
100μs
10
1ms
10ms
1
0.1
Operation in This Area
is Limited by R DS(on)
100ms
DC
SINGLE PULSE
TC = 25oC
TJ = 150oC
RθJC = 3.7oC/W
0.01
0
25
0.1
1
10
100
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
5
1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.1
*Notes:
1. ZθJC(t) = 3.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
7
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intended to be an exhaustive list of all such trademarks.
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F-PFS™
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Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
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PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
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TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
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ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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®
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®
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
8
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