FDJ1027P [FAIRCHILD]
P-Channel 1.8V Specified PowerTrench MOSFET; P沟道1.8V指定的PowerTrench MOSFET
| 型号： | FDJ1027P |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2004
FDJ1027P
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
Features
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SC75, the RDS(ON) and thermal
properties of the device are optimized for battery power
management applications.
• –2.8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.5 V
RDS(ON) = 230 mΩ @ VGS = –2.5 V
RDS(ON) = 390 mΩ @ VGS = –1.8 V
• Low gate charge, High Power and Current handling
Applications
capability
• Battery management/Charger Application
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• FLMP SC75 package: Enhanced thermal
performance in industry-standard package size
Bottom Drain Contact
S2
S1
4
5
6
3
2
1
G1
G2
S2
S1
Bottom Drain Contact
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
VGSS
Gate-Source Voltage
V
±8
ID
Drain Current – Continuous
(Note 1a)
–2.8
–12
A
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.5
0.9
PD
TJ, Tstg
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
80
5
RθJA
°C/W
RθJC
Package Marking and Ordering Information
.G
FDJ1027P
7’’
8mm
3000 units
2004 Fairchild Semiconductor Corporation
FDJ1027P Rev C1 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source BreakdownVoltage
–20
V
VGS = 0 V,
ID = –250 µA
Breakdown Voltage Temperature
Coefficient
–13
∆BVDSS
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current VDS = –16 V,
Gate–Body Leakage VGS = ±8 V,
VGS = 0 V
VDS = 0 V
–1
µA
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–0.8
3
–1.5
V
VDS = VGS
,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
mV/°C
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8 V,
ID = –2.8 A
ID = –2.2 A
ID = –1.7 A
108
163
283
150
160
230
390
238
mΩ
VGS = –4.5 V,ID = –2.8 A,TJ=125°C
gFS
Forward Transconductance
VDS = –5 V,
ID = –2.8 A
5
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
290
55
pF
pF
VDS = –10 V,
f = 1.0 MHz
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
29
pF
V GS = 15 mV
f = 1.0 MHz
18
mΩ
Switching Characteristics (Note 2)
V
DD = –10 V,
ID = –1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
13
16
23
23
32
4
ns
ns
VGS = –4.5 V,
13
ns
18
ns
VDS = –10 V,
VGS = –4.5 V
ID = –2.8 A,
Qg
Qgs
Qgd
3
nC
nC
nC
0.65
0.75
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.25
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.25 A (Note 2)
Voltage
–0.8
trr
Diode Reverse Recovery Time
IF = –2.8 A,
14
4
ns
diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
nC
FDJ1027P Rev C1 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
80°C/W when
b)
140°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
mounted on a 1in2 pad
of 2 oz copper (Single
Operation).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDJ1027P Rev C1 (W)
Dimensional Outline and Pad Layout
Top
View
FDJ1027P Rev C1 (W)
Typical Characteristics
2.6
2.4
2.2
2
10
VGS=-4.5V
-3.5V
-3.0V
VGS=-1.8V
8
6
4
2
0
-2.5V
-2.0V
1.8
1.6
1.4
1.2
1
-2.5V
-2.0V
-1.8V
-3.0V
-3.5V
-4.0V
-4.5V
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.4
1.3
1.2
1.1
1
0.5
ID = -1.4A
ID = -2.8A
0.44
V
GS = -4.5V
0.38
0.32
0.26
0.2
TA = 125oC
0.9
0.8
0.7
0.14
0.08
TA = 25oC
2
-50
-25
0
25
50
75
100
125
150
1.5
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
5
VDS = -5V
VGS=0V
TA = -55oC
25oC
10
1
4
3
2
1
0
125oC
TA = 125oC
0.1
25oC
0.01
0.001
0.0001
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDJ1027P Rev C (W)
Typical Characteristics
5
500
400
300
200
100
0
f = 1 MHz
VGS = 0 V
ID = -2.8A
VDS = -5V
-10V
4
3
2
1
0
-15V
CISS
COSS
CRSS
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
SINGLE PULSE
RθJA = 140°C/W
TA = 25°C
8
6
4
2
0
µ
100 s
10
1
RDS(ON) LIMIT
1ms
10ms
100ms
1s
DC 10s
VGS = -4.5V
SINGLE PULSE
RθJA = 140oC/W
0.1
0.01
T
A = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * Rθ
JA
RθJA = 140oC/W
0.2
P(pk)
0.1
0.1
t1
0.05
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDJ1027P Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
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