2N5401NLBU [FAIRCHILD]
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE PACKAGE-3;
| 型号： | 2N5401NLBU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE PACKAGE-3 晶体 放大器 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
2N5401
MMBT5401
C
E
TO-92
C
B
B
SOT-23
Mark: 2L
E
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
150
160
5.0
V
V
Collector-Base Voltage
Emitter-Base Voltage
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5401
*MMBT5401
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
150
160
5.0
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 120 V, IE = 0
50
50
50
nA
µA
nA
VCB = 120 V, IE = 0, TA = 100°C
VEB = 3.0 V, IC = 0
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
50
60
50
240
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
0.5
1.0
1.0
V
V
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
IC = 250 µA, VCE = 5.0 V,
RS = 1.0 kΩ,
100
300
6.0
8.0
MHz
pF
Output Capacitance
Cobo
NF
Noise Figure
dB
f = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p
Itf=0 Vtf=0 Xtf=0 Rb=10)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.4
0.3
0.2
0.1
0
200
β
= 10
VCE = 5V
150
125 °C
25 °C
100
25 °C
125 ºC
- 40 ºC
50
- 40 ºC
0
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
Base-Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
- 40 ºC
- 40 ºC
25 °C
25 °C
125 ºC
125 ºC
VCE = 5V
β
= 10
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
100
10
1
220
V
= 100V
CB
210
200
190
180
170
0.1
25
50
75
100
125
150
0.1
1
10
100
1000
º
TA - AMBIENT TEMPERATURE ( C)
RESISTANCE (k
)
Ω
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
Input and Output Capacitance
vs Reverse Voltage
700
600
500
400
300
200
100
0
80
f = 1.0 MHz
60
40
TO-92
SOT-23
C
eb
20
C
cb
0
0.1
1
10
100
0
25
50
75
100
125
150
TEMPERATURE (oC)
V
- REVERSE BIAS VOLTAGE(V)
R
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