2N5401RLRM [ONSEMI]
Amplifier Transistors; 放大器晶体管
| 型号： | 2N5401RLRM |
| 厂家： | 
ONSEMI |
| 描述： | Amplifier Transistors |
| 文件： | 总6页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
2
Rating
Symbol 2N5400 2N5401
Unit
Vdc
BASE
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
V
120
130
150
160
CEO
CBO
V
Vdc
1
EMITTER
V
EBO
5.0
Vdc
I
C
600
mAdc
P
D
D
@ T = 25°C
Derate above 25°C
625
5.0
mW
mW/°C
A
TO−92
Total Device Dissipation
P
CASE 29
STYLE 1
@ T = 25°C
Derate above 25°C
1.5
12
Watts
mW/°C
C
1
2
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
3
Maximum ratings are those values beyond which device damage can occur.
Maximumratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
MARKING DIAGRAM
2N54xx
YWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
R
q
JA
200
°C/W
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3
°C/W
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 1
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector−Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
2N5400
2N5401
150
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
Vdc
2N5400
2N5401
160
5.0
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 120 Vdc, I = 0)
I
CBO
EBO
2N5401
2N5401
−
−
50
50
CB
E
(V = 120 Vdc, I = 0, T = 100°C)
CB
E
A
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
I
−
50
nAdc
−
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
(I = 1.0 mAdc, V = 5.0 Vdc)
50
60
50
−
240
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
(I = 50 mAdc, V = 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.5
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
−
−
1.0
1.0
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
−
T
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
100
−
300
6.0
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
obo
CB
E
Small−Signal Current Gain
h
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
40
−
200
8.0
C
CE
Noise Figure
NF
dB
(I = 250 mAdc, V = 5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
C
CE
S
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
†
Device
Package
TO−92
Shipping
2N5401
5000 Unit / Bulk
2N5401RL1
2N5401RLRA
2N5401RLRAG
TO−92
TO−92
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
TO−92
(Pb−Free)
2N5401RLRM
2N5401ZL1
TO−92
TO−92
2000 Tape & Ammo Box
2000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
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2
2N5401
200
150
T = 125°C
J
100
25°C
−ꢀ55°C
0.3
70
50
V
V
= −1.0 V
= −5.0 V
CE
30
20
CE
0.1
0.2
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1.0 mA
10 mA
30 mA
100 mA
C
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
2
10
V
= 30 V
CE
10
10
10
I
= I
CES
C
1
0
T = 125°C
J
75°C
−1
10
10
REVERSE
25°C
FORWARD
−2
−3
10
0.3 0.2 0.1
0
0.1
0.2 0.3 0.4
0.5 0.6 0.7
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
2N5401
1.0
0.9
2.5
T = 25°C
T = −55°C to 135°C
J
J
2.0
1.5
1.0
0.5
0.8
0.7
0.6
V
@ I /I = 10
C B
BE(sat)
q
q
for V
CE(sat)
VC
0
−0.5
−1.0
−1.5
0.5
0.4
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
for V
VB
BE(sat)
−2.0
−2.5
0.1 0.2
1.0 2.0 3.0 5.0
0.1 0.2
1.0 2.0 3.0 5.0
I , COLLECTOR CURRENT (mA)
0.3 0.5
10
20 30 50
100
0.3 0.5
10
20 30 50 100
I , COLLECTOR CURRENT (mA)
C
C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
100
70
T = 25°C
J
50
V
BB
V
CC
+ꢀ8.8 V
−30 V
30
20
10.2 V
C
ibo
100
3.0 k
R
C
V
in
10
7.0
5.0
V
out
0.25 mF
10 ms
INPUT PULSE
R
B
C
obo
5.1 k
100
3.0
2.0
t , t ≤ 10 ns
DUTY CYCLE = 1.0%
1N914
V
r
f
in
1.0
0.2
Values Shown are for I @ 10 mA
1.0
2.0 3.0
5.0 7.0
0.3
0.5 0.7
10
20
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
2000
I /I = 10
B
C
t @ V = 120 V
CC
r
1000
700
T = 25°C
J
500
I /I = 10
B
C
t @ V = 120 V
f CC
T = 25°C
J
300
200
500
t @ V = 30 V
r CC
t @ V = 30 V
CC
f
300
200
100
70
t @ V = 120 V
s CC
100
70
50
30
20
50
t @ V
d
= 1.0 V
BE(off)
V
CC
= 120 V
30
20
10
0.2
1.0 2.0 3.0 5.0
0.2
1.0 2.0 3.0 5.0
0.3 0.5
10 20 30 50
100 200
0.3 0.5
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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4
2N5401
PACKAGE DIMENSIONS
TO−92
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
0.115
0.135
2.93
3.43
SECTION X−X
−−−
−−−
1
N
STYLE 1:
PIN 1. EMITTER
2. BASE
N
3. COLLECTOR
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5
2N5401
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
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For additional information, please contact your
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2N5401/D
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