2N3904TA [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N3904TA |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总7页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2011
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
PZT3904
2N3904
MMBT3904
C
C
E
E
C
B
TO-92
SOT-23
B
SOT-223
Mark:1A
EBC
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
Units
V
40
60
Collector-Base Voltage
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
TJ, Tstg
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Max.
Symbol
Parameter
Units
2N3904
*MMBT3904
**PZT3904
Total Device Dissipation
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
PD
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
357
125
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
IC = 10μA, IE = 0
IE = 10μA, IC = 0
6.0
V
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
40
70
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.2
0.3
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.65
300
0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10mA, VCE = 20V,
f = 100MHz
MHz
pF
Cobo
Cibo
NF
Output Capacitance
Input Capacitance
Noise Figure
VCB = 5.0V, IE = 0,
f = 1.0MHz
4.0
8.0
5.0
VEB = 0.5V, IC = 0,
f = 1.0MHz
pF
IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
dB
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0V, VBE = 0.5V
IC = 10mA, IB1 = 1.0mA
35
35
ns
ns
ns
ns
ts
tf
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
200
50
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Ordering Information
Part Number
2N3904BU
Marking
2N3904
2N3904
2N3904
2N3904
2N3904
1A
Package
TO-92
Packing Method
BULK
Pack Qty
10000
2000
2000
2000
2000
3000
10000
2500
2N3904TA
TO-92
AMMO
2N3904TAR
2N3904TF
TO-92
AMMO
TO-92
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
2N3904TFR
MMBT3904
MMBT3904_D87Z
PZT3904
TO-92
SOT-23
SOT-23
SOT-223
1A
3904
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
2
Typical Performance Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
V CE = 5V
0.15
0.1
β
= 10
400
125 °C
125 °C
300
25 °C
200
25 °C
0.05
- 40 °C
100
- 40 °C
0
0.1
1
10
100
0.1
1
10
1 00
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
β
= 10
V
= 5V
1
CE
- 40 °C
- 40 °C
0.8
0.6
0.4
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
3
Typical Performance Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
10
8
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
Ω
= 200
S
10
8
μA
= 50
= 1.0
I
I
= 5.0 mA
C
S
C
R
μA
= 50
kΩ
I
C
I
= 0.5 mA
C
R
6
6
Ω
= 200
S
μA
= 100
I
4
4
C
2
2
I
= 100 R = 500
μA Ω
S
C
0
0
0.1
1
10
100
0.1
1
10
100
( kΩ )
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
SOT-223
60
80
100
120
TO-92
θ
SOT-23
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
4
Typical Performance Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
100
1
10
- COLLECTOR CURRENT (mA)
100
I
- COLLECTOR CURRENT (mA)
I
C
C
Current Gain
Output Admittance
500
100
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input Impedance
Voltage Feedback Ratio
100
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
5
4
10
1
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
5
Test Circuits
3.0 V
Ω
275
300ns
10.6 V
=
Duty Cycle 2%
kΩ
10
0
< 4.0pF
C1
- 0.5 V
< 1.0ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10 < t < 500 μs
1
t1
10.9 V
Ω
275
=
Duty Cycle 2%
10 kΩ
0
< 4.0pF
C1
1N916
- 9.1 V
< 1.0ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
6
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I57
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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