2N3904TFR [ONSEMI]
200 mA, 40 V NPN General Purpose Bipolar Junction Transistor;型号: | 2N3904TFR |
厂家: | ONSEMI |
描述: | 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor 开关 小信号双极晶体管 |
文件: | 总11页 (文件大小:343K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N3903
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
60
V
V
Collector-Base Voltage
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3903
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
2001 Fairchild Semiconductor Corporation
2N3903, Rev A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10 µA, IE = 0
6.0
V
IE = 10 µA, IC = 0
VCE = 30 V, VOB = 3.0 V
VCE = 30 V, VOB = 3.0 V
50
50
nA
nA
z
IBL
Base Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 0.1 mA
20
35
50
30
15
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
VCE = 1.0 V, IC = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
150
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
VCE(
)
sat
0.65
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 5.0 V, f = 100 kHz
VEB = 0.5 V, f = 100 kHz
4.0
8.0
pF
pF
Cob
Cib
hfe
Input Capacitance
Small-Signal Current Gain
IC = 10 mA, VCE = 20 V,
f = 100 MHz
2.5
Small-Signal Current Gain
Input Impedance
VCE = 10 V, IC = 1.0 mA
50
1.0
0.1
1.0
200
8.0
5.0
40
hfe
f = 1.0 kHz
kΩ
h
ie
hre
x 10-4
µmhos
dB
Voltage Feedback Ratio
Output Admittance
Noise Figure
hoe
NF
6.0
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
BW = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, IC = 10 mA,
35
35
ns
ns
ns
ns
td
tr
IB1 = 1.0 mA , Vob ( off ) = 0.5 V
VCC = 3.0 V, IC = 10 mA
IB1 = IB2 = 1.0 mA
175
50
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
400
300
200
100
0
V CE = 5V
0.15
0.1
β
= 10
125 °C
125 °C
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
β
= 10
CE
- 40 °C
- 40 °C
0.8
0.6
0.4
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
10
8
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
10
8
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
SOT-223
60
80
100
120
TO-92
θ
SOT-23
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
100
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
100
1
10
- COLLECTOR CURRENT (mA)
100
I
- COLLECTOR CURRENT (mA)
I
C
C
Current Gain
Output Admittance
500
100
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input Impedance
Voltage Feedback Ratio
100
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
5
4
10
1
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
t1
10 < t1
< 500 µs
10.9 V
275 Ω
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
10000
LOT:
CBVK741B019
NSID:
D/C1:
SPEC:
PN2222N
FSCINT
Label
SPEC REV:
QA REV:
D9842
B2
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR Label sample
LOT: CBVK741B019
F63TNR
Label
QTY: 2000
SPEC:
FSID: PN222N
Customized
Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
375mm x 267mm x 375mm
Intermediate Box
TO-92 TNR/AMMO PACKING INFROMATION
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Packing
Style
A
Quantity
2,000
EOL code
D26Z
Reel
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
FSCINT
Label
Unit weight
Reel weight with components
Ammo weight with components = 1.02 kg
= 0.22 gm
= 1.04 kg
Max quantity per intermediate box = 10,000 units
5 Ammo boxes per
Intermediate Box
327mm x 158mm x 135mm
Immediate Box
Customized
Label
F63TNR
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
(TO-92) BULK PACKING INFORMATION
BULK OPTION
See Bulk Packing
Information table
EOL
CODE
LEADCLIP
DESCRIPTION
QUANTITY
2.0 K / BOX
DIMENSION
J18Z
TO-18 OPTION STD
TO-5 OPTION STD
NO LEAD CLIP
Anti-static
Bubble Sheets
J05Z
NO LEAD CLIP
NO LEADCLIP
1.5 K / BOX
2.0 K / BOX
FSCINT Label
NO EOL
CODE
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
NO LEADCLIP
2.0 K / BOX
(PROELECTRON SERIES
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
BCXXX, BFXXX, BSRXXX),
97, 98
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration: Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Hd
P
Pd
b
Ha
W1
d
S
L
H1
HO
L1
WO
t
W2
W
t1
P1 F1
P2
DO
ITEM DESCRIPTION
SYMBOL
DIMENSION
PO
b
0.098 (max)
Base of Package to Lead Bend
Component Height
Ha
HO
H1
Pd
Hd
P
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
User Direction of Feed
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
PO
P1
P2
F1/F2
d
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
L
Cut Lead Length
L1
t
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
t1
W
TO-92 Reel
Configuration: Figure 5.0
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
WO
W1
W2
DO
S
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Sprocket Hole Diameter
Lead Spring Out
Note : All dimensions are in inches.
ELECTROSTATIC
SENSITIVE DEVICES
D4
D1
ITEM DESCRIPTION
SYSMBOL MINIMUM
MAXIMUM
D2
Reel Diameter
D1
D2
D2
D3
D4
W1
W2
W3
13.975
1.160
0.650
3.100
2.700
0.370
1.630
14.025
1.200
0.700
3.300
3.100
0.570
1.690
2.090
F63TNR Label
Arbor Hole Diameter (Standard)
(Small Hole)
Customized Label
Core Diameter
Hub Recess Inner Diameter
Hub Recess Depth
Flange to Flange Inner Width
Hub to Hub Center Width
W1
W3
W2
Note: All dimensions are inches
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
January 2000, Rev. B
©2000 Fairchild Semiconductor International
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Definition of Terms
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Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
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supplementary data will be published at a later date.
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Rev. G
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