FLC107WG [EUDYNA]
C-Band Power GaAs FET; C波段功率GaAs FET
| 型号： | FLC107WG |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | C-Band Power GaAs FET |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLC107WG
C-Band Power GaAs FET
FEATURES
• High Output Power: P
= 30.0dBm(Typ.)
1dB
• High Gain: G
= 8.0dB(Typ.)
= 36%(Typ.)
1dB
• High PAE: η
add
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
7.5
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed +10 volts.
DS
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
400
600
-
mA
DS
DS
DS
DSS
g
= 5V, I
= 250mA
= 20mA
200
m
-
mS
V
DS
Pinch-off Voltage
V
= 5V, I
DS
-1.0
-2.0 -3.5
p
Gate Source Breakdown Voltage
V
-
-
= -20µA
-5
V
GSO
GS
Output Power at 1dB G.C.P.
P
1dB
28.5 30.0
-
dBm
V
= 10V,
DS
I
= 0.6 I
DS
DSS (Typ.),
-
Power Gain at 1dB G.C.P.
Power-added Efficiency
G
7.0
8.0
dB
1dB
f = 8 GHz
η
add
-
-
-
36
16
%
R
Thermal Resistance
Channel to Case
20
°C/W
th
G.C.P.: Gain Compression Point
CASE STYLE: WG
Edition 1.1
July 1999
1
FLC107WG
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
500
10
V
=0V
400
GS
-0.5V
-1.0V
8
300
200
100
6
4
-1.5V
-2.0V
2
0
2
4
6
8
10
0
50
100
150
200
Drain-Source Voltage (V)
Case Temperature (°C)
P
& η
add
vs. V
OUTPUT POWER vs. INPUT POWER
1dB
DS
V
I
=10V
≈ 0.6 I
DS
DS
f=8GHz
≈ 0.6 I
31
29
27
25
23
DSS
I
DS
DSS
6 GHz
50
40
30
31
30
29
8 GHz
6 GHz
50
40
30
20
10
P
out
P
1dB
η
add
8 GHz
21
19
η
add
8
9
10
12 14 16 18 20 22
Input Power (dBm)
Drain-Source Voltage (V)
2
FLC107WG
C-Band Power GaAs FET
S
S
S
S
+90°
11
22
21
12
+j50
+j100
+j25
2GHz
3
10
9
8
7
+j250
+j10
0
4
5
6
6
5
4
3
10
2GHz
10
10
25
4
50Ω
4
3
2
1
100
250
180°
0°
7
3
4
9
9
SCALE FOR |S
|
9
21
7
8
10
.02
.04
7
2GHz
6
-j10
-j250
2GHz
3
5
.06
.08
-j25
-j100
-j50
-90°
S-PARAMETERS
V
= 10V, I
= 250mA
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
.945
.912
.901
.897
.894
.890
.884
.871
.851
.841
.831
-80.8
10.188
6.711
3.629
2.404
1.817
1.494
1.288
1.117
.968
131.0
103.4
73.4
54.1
38.7
24.1
8.7
.024
.031
.033
.031
.029
.029
.029
.030
.030
.034
.044
44.6
21.6
.3
.260
.277
.368
.469
.548
.601
.640
.676
.708
.737
.759
-61.5
-91.4
-121.7
-154.5
-168.3
-176.5
174.8
164.2
152.7
143.1
135.2
126.5
-114.0
-124.2
-131.8
-139.3
-148.9
-160.1
-168.9
-175.2
179.6
-10.1
-14.0
-16.6
-17.9
-22.5
-15.8
-12.8
-10.3
-7.3
-21.1
-32.8
-44.2
.875
.854
Download S-Parameters, click here
3
FLC107WG
C-Band Power GaAs FET
Case Style "WG"
Metal-Ceramic Hermetic Package
2.8
(0.11)
2-Ø1.6±0.01
(0.063)
0.1±0.05
(0.004)
1
2
3
0.5
(0.020)
0.8±0.1
(0.031)
8.5±0.2
(0.335)
2.5 Max.
(0.098)
1. Gate
2. Source
3. Drain
4. Source
6.1±0.1
(0.240)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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