EGN35A090IV [EUDYNA]
High Voltage - High Power GaN-HEMT; 高电压 - 高功率氮化镓HEMT
| 型号： | EGN35A090IV |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | High Voltage - High Power GaN-HEMT |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Eudyna GaN-HEMT 90W
ES/EGN35A090IV
Preliminary
High Voltage - High Power GaN-HEMT
FEATURES
・
High Voltage Operation : VDS=50V
・
High Power : 50.0dBm (typ.) @ P3dB
・High Efficiency: 50%(typ.) @ P3dB
・Linear Gain : 12.0dB(typ.) @ f=3.5GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
=25oC
Rating
120
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
T
c
-5
V
Pt
150
W
Tstg
-65 to +175
250
oC
oC
T
ch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
Symbol
Condition
Limit
50
Unit
V
DC Input Voltage
V
DS
GF
GR
ch
Forward Gate Current
Reverse Gate Current
Channel Temperature
I
RG
=5 Ω
<TBD
>-7.2
200
mA
mA
oC
I
RG
=5 Ω
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
min. Typ. Max.
Unit
Pinch-Off Voltage
V
p
V
DS=50V IDS=36mA -1.0
-2.0
-350
50.0
50
-3.5
V
V
Gate-Drain Breakdown Voltage
3dB Gain Compression Power
Drain Efficiency
VGDO
I
GS=- 18mA
-
TBD
-
-
-
-
-
P3dB
V
DS=50V
ꢀ dBm
%
η
d
IDS(DC)=500mA
Linear Gain
G
L
f=3.5GHz
TBD
-
12.0
1.3
dB
Thermal Resistance
Rth
Channel to Case
1.5 ꢀ oC/W
Edition 1.2
Dec. 2005
1
ES/EGN35A090IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
Output Power and Drain Efficiency vs. Input Power
DS=50V IDS(DC)=500mA f=3.5GHz
V
V
DS=50V IDS(DC)=500mA
53
51
49
47
45
43
41
39
37
35
33
100
90
80
70
60
50
40
30
20
10
0
53
51
49
47
45
43
41
39
37
35
33
3.35
3.40
3.45
3.50
3.55
3.60
3.65
Frequency [GHz]
23 25 27 29 31 33 35 37 39 41 43
Input Power [dBm]
Pin=26dBm
Pin=38dBm
Pin=30dBm
Pin=42dBm
Pin=34dBm
Power Derating Curve
160
140
120
100
80
60
40
20
0
0
50
100
150
200
250
300
Case Temperature [oC]
Edition 1.2
Dec. 2005
2
ES/EGN35A090IV
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V, IDS=500mA, f=2 to 5 GHz,
= Z = 50 ohm
Z
l
s
Freq
[GHz]
2.0
S11
MAG
0.540
S21
MAG
2.377
S12
MAG
0.003
S22
MAG
0.906
ANG
58.0
ANG
-106.7
ANG
-107.5
ANG
161.6
+50j
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
0.419
0.443
0.556
0.660
0.728
0.770
0.787
0.782
0.760
0.733
0.696
0.646
0.579
0.495
0.418
0.382
0.409
0.465
0.522
0.560
0.580
0.583
0.570
0.555
0.559
0.565
0.575
0.618
0.680
0.742
7.6
-51.6
-92.3
-116.9
-133.8
-146.3
-156.7
-165.3
-172.7
-179.2
174.7
168.6
163.3
160.3
162.6
170.7
178.5
179.1
174.4
166.6
156.8
145.6
133.0
116.9
94.4
2.834
3.156
3.342
3.522
3.772
4.084
4.332
4.192
3.786
3.372
3.044
2.860
2.747
2.680
2.632
2.539
2.408
2.257
2.148
2.117
2.160
2.299
2.553
2.880
3.057
2.690
1.978
1.339
0.890
0.610
-130.6
-155.6
-179.7
158.1
135.7
111.4
84.0
55.2
28.8
6.5
-13.0
-31.2
-49.7
-69.0
-89.6
-110.9
-131.3
-151.2
-169.1
172.9
155.2
135.5
112.7
83.9
46.7
5.0
-32.6
-63.0
-86.8
-106.0
0.003
0.004
0.005
0.006
0.007
0.009
0.010
0.011
0.010
0.010
0.009
0.009
0.009
0.010
0.011
0.011
0.012
0.012
0.013
0.014
0.017
0.021
0.028
0.038
0.046
0.046
0.039
0.030
0.021
0.017
-131.0
-150.9
-176.5
164.9
141.5
124.5
102.0
77.3
59.6
42.1
32.9
21.8
0.893
0.869
0.833
0.767
0.663
0.479
0.205
0.134
0.394
0.570
0.677
0.745
0.788
0.819
0.847
0.860
0.866
0.857
0.843
0.829
0.796
0.749
0.668
0.538
0.424
0.510
0.663
0.752
0.798
0.829
157.9
153.7
147.9
139.9
129.8
116.8
105.7
-130.9
-134.4
-146.3
-155.9
-163.6
-170.7
-176.8
177.2
171.4
165.0
158.3
151.7
143.9
133.6
121.0
101.2
68.1
+100j
10Ω
+25j
25Ω
50Ω
+250j
+10j
0
3.5GHz
∞
3.5GHz
-250j
-10j
8.9
-6.7
-23.4
-44.0
-65.8
-82.6
-97.9
-113.2
-127.9
-144.7
-166.5
167.5
133.3
96.9
S11
-25j
-100j
S22
-50j
+90°
5.4
-69.3
-113.4
-137.9
-153.4
-163.2
61.6
21.7
-16.3
-47.7
-71.3
66.4
44.4
28.4
23.1
3.5GHz
±180°
6
0°
Scale for |S21|
3.5GHz
S12
S21
0.6
Scale for |S 12
|
-90°
Edition 1.2
Dec. 2005
3
ES/EGN35A090IV
High Voltage - High Power GaN-HEMT
IV Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
Edition 1.2
Dec. 2005
4
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