EGN35A180IV [EUDYNA]
High Voltage - High Power GaN-HEMT; 高电压 - 高功率氮化镓HEMT
| 型号： | EGN35A180IV |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | High Voltage - High Power GaN-HEMT |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Eudyna GaN-HEMT 180W
ES/EGN35A180IV
Preliminary
High Voltage - High Power GaN-HEMT
FEATURES
・
High Voltage Operation : VDS=50V
・
High Power : 53.0dBm (typ.) @ P3dB
・High Efficiency: 50%(typ.) @ P3dB
・Linear Gain : 12.0dB(typ.) @ f=3.5GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
=25oC
Rating
120
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
T
c
-5
V
Pt
281.25
-65 to +175
250
W
Tstg
oC
oC
T
ch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
Symbol
Condition
Limit
50
Unit
V
DC Input Voltage
V
DS
GF
GR
ch
Forward Gate Current
Reverse Gate Current
Channel Temperature
I
RG
=2 Ω
<TBD
>-7.2
200
mA
mA
oC
I
RG
=2 Ω
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
min. Typ. Max.
Unit
Pinch-Off Voltage
V
p
V
DS=50V IDS=72mA -1.0
-2.0
-350
53.0
50
-3.5
V
V
Gate-Drain Breakdown Voltage
3dB Gain Compression Power
Drain Efficiency
VGDO
I
GS=- 36mA
-
TBD
-
-
-
-
-
P3dB
V
DS=50V
ꢀ dBm
%
η
d
IDS(DC)=1000mA
Linear Gain
G
L
f=3.5GHz
TBD
-
12.0
0.65
dB
Thermal Resistance
Rth
Channel to Case
0.8 ꢀ oC/W
Edition 1.2
Dec. 2005
1
ES/EGN35A180IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
Output Power and Drain Efficiency vs. Input Power
DS=50V IDS(DC)=1000mA f=3.5GHz
V
V
DS=50V IDS(DC)=1000mA
56
54
52
50
48
46
44
42
40
38
36
56
54
52
50
48
46
44
42
40
38
36
100
90
80
70
60
50
40
30
20
10
0
3.35
3.40
3.45
3.50
3.55
3.60
3.65
Frequency [GHz]
24 26 28 30 32 34 36 38 40 42 44 46
Input Power [dBm]
Pin=28dBm
Pin=40dBm
Pin=32dBm
Pin=45dBm
Pin=36dBm
Power Derating Curve
300
250
200
150
100
50
0
0
50
100
150
200
250
300
Case Temperature [oC]
Edition 1.2
Dec. 2005
2
ES/EGN35A180IV
High Voltage - High Power GaN-HEMT
S-Parameters @VDS=50V, IDS=1000mA, f=2 to 5 GHz,
= Z = 50 ohm
Z
l
s
Freq
[GHz]
2.0
S11
MAG
0.368
S21
MAG
1.763
S12
MAG
0.006
S22
MAG
0.923
ANG
-45.9
ANG
-138.1
ANG
165.3
138.9
122.0
108.8
95.7
80.0
70.1
54.7
33.5
ANG
159.2
+50j
+100j
10Ω
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
0.556
0.698
0.775
0.812
0.828
0.834
0.824
0.795
0.737
0.644
0.524
0.388
0.242
0.133
0.153
0.221
0.254
0.234
0.154
0.079
0.265
0.502
0.677
0.779
0.833
0.862
0.883
0.896
0.902
0.907
-106.1
-134.7
-151.5
-163.2
-172.5
179.4
171.3
162.6
153.0
143.1
134.0
126.6
125.0
148.2
-169.3
-161.9
-167.2
-175.7
-178.9
-114.2
-81.4
1.693
1.573
1.514
1.538
1.663
1.900
2.294
2.808
3.413
3.854
3.989
3.897
3.700
3.434
3.173
2.950
2.820
2.758
2.807
2.892
2.845
2.577
2.076
1.530
1.056
0.709
0.480
0.326
0.233
0.167
-165.4
173.9
157.5
143.6
129.2
113.8
95.8
73.5
46.0
14.6
-17.8
-47.9
-76.7
-103.9
-129.6
-153.3
-176.3
160.1
135.3
106.2
73.3
0.007
0.007
0.007
0.008
0.009
0.011
0.013
0.016
0.020
0.022
0.023
0.022
0.021
0.020
0.019
0.018
0.018
0.019
0.019
0.021
0.021
0.018
0.013
0.008
0.006
0.008
0.009
0.010
0.007
0.008
0.910
0.897
0.883
0.859
0.827
0.768
0.670
0.506
0.271
0.143
0.353
0.520
0.610
0.652
0.667
0.666
0.660
0.645
0.616
0.578
0.500
0.380
0.251
0.288
0.449
0.589
0.683
0.747
0.788
0.817
156.4
153.3
148.9
143.3
136.4
126.8
113.9
94.3
+25j
25Ω
50Ω
+250j
+10j
0
∞
3.5GHz
3.5GHz
7.9
60.6
-51.4
-22.2
-51.6
-79.5
-107.5
-131.3
-153.6
-174.1
169.0
151.3
133.3
110.2
85.6
60.0
35.6
30.0
55.1
57.6
53.8
40.2
34.1
-115.8
-141.1
-158.0
-170.0
-179.4
172.6
164.9
156.4
146.9
134.1
115.7
87.2
33.6
-41.3
-84.4
-109.6
-126.1
-138.2
-148.0
-155.3
-250j
-10j
S11
-25j
-100j
S22
-50j
+90°
-94.7
37.0
0.8
-111.4
-125.4
-136.5
-144.3
-150.7
-155.9
-160.6
-164.8
-32.9
-62.0
-85.8
-104.7
-120.0
-132.9
-143.4
3.5GHz
±180°
6
0°
28.4
Scale for |S21|
3.5GHz
S12
S21
0.6
Scale for |S 12
|
-90°
Edition 1.2
Dec. 2005
3
ES/EGN35A180IV
High Voltage - High Power GaN-HEMT
IV Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
Edition 1.2
Dec. 2005
4
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