MSB710-RT1 [ETL]
PNP General Purpose Amplifier Transistor Surface Mount; PNP通用放大器晶体管表面贴装![MSB710-RT1](http://pdffile.icpdf.com/pdf1/p00111/img/icpdf/MSB710_603583_icpdf.jpg)
型号: | MSB710-RT1 |
厂家: | ![]() |
描述: | PNP General Purpose Amplifier Transistor Surface Mount |
文件: | 总1页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PNP General Purpose Amplifier
Transistor Surface Mount
MSB710-RT1
COLLECTOR
3
3
1
2
CASE 318D–04, STYLE1
SC–59
2
1
BASE
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V (BR)CBO
V(BR)CEO
V (BR)EBO
IC
–60
–50
–7.0
–500
–1.0
Collector Current - Continuous
Collector Current - Peak
THERMAL CHARACTERISTICS
Characteristic
mAdc
Adc
I C(P)
Symbol
PD
Max
200
Unit
mW
°C
Power Dissipation
Junction Temperature
Storage Temperature
T J
150
Tstg
–55 ~ +150
°C
DEVICE MARKING
X
CR
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N3–1/1
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