MSB710-RT1G [ONSEMI]

PNP General Purpose Amplifier Transistor Surface Mount; PNP通用放大器晶体管表面贴装
MSB710-RT1G
型号: MSB710-RT1G
厂家: ONSEMI    ONSEMI
描述:

PNP General Purpose Amplifier Transistor Surface Mount
PNP通用放大器晶体管表面贴装

晶体 放大器 晶体管
文件: 总2页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MSB710−RT1  
Preferred Device  
PNP General Purpose  
Amplifier Transistor  
Surface Mount  
Features  
http://onsemi.com  
Pb−Free Package is Available  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
V
V
50  
Vdc  
2
1
BASE  
EMITTER  
7.0  
500  
−1.0  
Vdc  
Collector Current − Continuous  
Collector Current − Peak  
I
mAdc  
Adc  
C
I
C(P)  
3
THERMAL CHARACTERISTICS  
2
1
Characteristic  
Power Dissipation  
Symbol  
Max  
200  
Unit  
mW  
°C  
P
D
SC−59  
CASE 318D  
Junction Temperature  
Storage Temperature  
T
150  
J
T
stg  
−55 to +150  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MARKING DIAGRAM  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
CR M G  
A
1
G
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector−Emitter Breakdown Voltage  
Vdc  
(I = −10 mAdc, I = 0)  
V
50  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
CR = Device Code  
Collector−Base Breakdown Voltage  
(I = −10 mAdc, I = 0)  
Vdc  
Vdc  
mAdc  
M
= Date Code*  
V
V
60  
7.0  
C
E
G
= Pb−Free Package  
Emitter−Base Breakdown Voltage  
(I = −10 mAdc, I = 0)  
(Note: Microdot may be in either location)  
E
C
*Date Code orientation may vary depending  
upon manufacturing location.  
Collector−Base Cutoff Current  
(V = −20 Vdc, I = 0)  
I
CBO  
0.1  
CB  
E
DC Current Gain (Note 1)  
(V = −10 Vdc, I = −150 mAdc)  
ORDERING INFORMATION  
h
FE1  
h
FE2  
120  
40  
240  
CE  
C
(V = −10 Vdc, I = 500 mAdc)  
CE  
C
Device  
Package  
Shipping  
Collector−Emitter Saturation Voltage  
(I = 300 mAdc, I = 30 mAdc)  
Vdc  
Vdc  
pF  
MSB710−RT1  
MSB710−RT1G  
SC−59  
3000 / Tape & Reel  
3000 / Tape & Reel  
V
0.6  
−1.5  
15  
C
B
CE(sat)  
BE(sat)  
SC−59  
(Pb−Free)  
Collector−Base Saturation Voltage  
(I = 300 mAdc, I = 30 mAdc)  
V
C
B
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Output Capacitance  
(V = −10 Vdc, I = 0, f = 1.0 MHz)  
C
ob  
CB  
E
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MSB710−RT1/D  
 
MSB710−RT1  
PACKAGE DIMENSIONS  
SC−59  
CASE 318D−04  
ISSUE G  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
D
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
MILLIMETERS  
INCHES  
NOM  
3
DIM  
A
A1  
b
c
D
E
e
L
MIN  
1.00  
0.01  
0.35  
0.09  
2.70  
1.30  
1.70  
0.20  
2.50  
NOM  
1.15  
0.06  
0.43  
0.14  
2.90  
1.50  
1.90  
0.40  
2.80  
MAX  
1.30  
0.10  
0.50  
0.18  
3.10  
1.70  
2.10  
0.60  
3.00  
MIN  
MAX  
0.051  
0.004  
0.020  
0.007  
0.122  
0.067  
0.083  
0.024  
0.118  
E
H
E
0.039  
0.001  
0.014  
0.003  
0.106  
0.051  
0.067  
0.008  
0.099  
0.045  
0.002  
0.017  
0.005  
0.114  
0.059  
0.075  
0.016  
0.110  
2
1
b
e
H
E
C
A
L
A1  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MSB710−RT1/D  

相关型号:

MSB710-RT3

500mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
ONSEMI

MSB710QT1

PNP General Purpose Amplifier Transistors Surface Mount
MOTOROLA

MSB710QT3

Transistor
MOTOROLA

MSB710RT3

Transistor
MOTOROLA

MSB71D

Single Color LED, Red, Diffused, 5mm,
MICRO-ELECTRO

MSB71DA

Single Color LED, Red, Diffused, 5mm,
MICRO-ELECTRO

MSB72D

Single Color LED, Red, Diffused, 4.95mm
MICRO-ELECTRO

MSB72DA

Single Color LED, Red, Diffused, 4.95mm,
MICRO-ELECTRO

MSB73D

RED LED ENCAPSULATED IN A 1mm x 5mm RECTANGULAR BARS PACKAGE
MICRO-ELECTRO

MSB73DA

ULTRA HIGH BRIGHTNESS RECTANGULAR BAR RED LED LAMP
MICRO-ELECTRO

MSB74D

1.2mm x 3.4mm RECTANGULAR BAR LED LAMP
MICRO-ELECTRO

MSB74DA

Single Color LED, Red, Diffused, 3.4mm,
MICRO-ELECTRO