MSB710-RT1G [ONSEMI]
PNP General Purpose Amplifier Transistor Surface Mount; PNP通用放大器晶体管表面贴装型号: | MSB710-RT1G |
厂家: | ONSEMI |
描述: | PNP General Purpose Amplifier Transistor Surface Mount |
文件: | 总2页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MSB710−RT1
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
Features
http://onsemi.com
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Value
−60
Unit
Vdc
V
(BR)CBO
(BR)CEO
(BR)EBO
V
V
−50
Vdc
2
1
BASE
EMITTER
−7.0
−500
−1.0
Vdc
Collector Current − Continuous
Collector Current − Peak
I
mAdc
Adc
C
I
C(P)
3
THERMAL CHARACTERISTICS
2
1
Characteristic
Power Dissipation
Symbol
Max
200
Unit
mW
°C
P
D
SC−59
CASE 318D
Junction Temperature
Storage Temperature
T
150
J
T
stg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (T = 25°C)
CR M G
A
1
G
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
Vdc
(I = −10 mAdc, I = 0)
V
−50
−
C
B
(BR)CEO
(BR)CBO
(BR)EBO
CR = Device Code
Collector−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
Vdc
Vdc
mAdc
−
M
= Date Code*
V
V
−60
−7.0
−
−
−
C
E
G
= Pb−Free Package
Emitter−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
(Note: Microdot may be in either location)
E
C
*Date Code orientation may vary depending
upon manufacturing location.
Collector−Base Cutoff Current
(V = −20 Vdc, I = 0)
I
CBO
−0.1
CB
E
DC Current Gain (Note 1)
(V = −10 Vdc, I = −150 mAdc)
ORDERING INFORMATION
h
FE1
h
FE2
120
40
240
−
CE
C
(V = −10 Vdc, I = 500 mAdc)
†
CE
C
Device
Package
Shipping
Collector−Emitter Saturation Voltage
(I = −300 mAdc, I = −30 mAdc)
Vdc
Vdc
pF
MSB710−RT1
MSB710−RT1G
SC−59
3000 / Tape & Reel
3000 / Tape & Reel
V
−
−
−
−0.6
−1.5
15
C
B
CE(sat)
BE(sat)
SC−59
(Pb−Free)
Collector−Base Saturation Voltage
(I = −300 mAdc, I = −30 mAdc)
V
C
B
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Output Capacitance
(V = −10 Vdc, I = 0, f = 1.0 MHz)
C
ob
CB
E
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
MSB710−RT1/D
MSB710−RT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
H
E
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
2
1
b
e
H
E
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MSB710−RT1/D
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