US1881E [ETC]
CMOS MULTI-PURPOSE LATCH; CMOS多用途LATCH
| 型号： | US1881E |
| 厂家： | 
ETC |
| 描述： | CMOS MULTI-PURPOSE LATCH |
| 文件： | 总11页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1881
CMOS Multi-Purpose Latc
h
Features and Benefits
ß Chopper stabilized amplifier stage
ß Optimized for brushless DC motor applications
ß Miniature high reliability package
ß Operation down to 3.5V
ß CMOS for optimum stability, quality and cost
ß Low power consumption
Ordering Information
Part No.
US1881
US1881
US1881
Temperature Suffix
E (-40°C to 85°C)
K (-40°C to 125°C)
L (-40°C to 150°C)
Package Code
SO (SOT-23) or UA(TO-92)
SO (SOT-23) or UA(TO-92)
SO (SOT-23) or UA(TO-92)
1 Functional Diagram
Applications
ß Solid state switch
ß Brushless DC motor commutation
ß Speed Sensing
ß Linear position sensing
ß Angular position sensing
ß Current sensing
Pinout:
Note: Static electricity sensitive device; please observe
ESD precautions. Reverse voltage protection is not in-
cluded. For reverse polarity protection, a 100Ohm resistor
in series with VDD is recommended.
UA Package:
SO Package:
Pin1: VDD - supply
Pin2: GND - Ground
Pin3: OUT - Output
Pin1: VDD - supply
Pin2: OUT – Output
Pin3: GND - Ground
2 Description
The US1881 is the industry’s first Hall integrated circuit in SOT-23 package. The US1881 is a bipolar Hall effect
sensor IC based on mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to
provide accurate and stable magnetic switch points. There are many applications for this HED in addition to those
listed above. The design, specifications and performance have been optimized for commutation applications in 5V
and 12V brushless DC motors.
In UA packaged device the output transistor will be latched on (Bop) in presence of a sufficiently strong South
pole magnetic field facing the marked side of the package. Similarly, the output will be latched off (Brp) in the
presence of a North field. The SOT-23 device behaviour is reverse to the UA device. The SOT-23 output transistor will
be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field on the marked side
.
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Table of Contents
1
2
3
4
5
6
7
8
Functional Diagram....................................................................................................1
Description .................................................................................................................1
Glossary of Terms......................................................................................................3
Absolute Maximum Ratings ......................................................................................3
US1881 Electrical Characteristics ............................................................................3
Magnetic Characteristics...........................................................................................4
Unique Features.........................................................................................................4
Performance Graphs – unless otherwise specified Ta=25oC, VDD=12V...............5
8.1
Typical Magnetic Switch Points vs VDD ........................................................................... 5
Magnetic Switch Points vs Temperature......................................................................... 5
Output Voltage vs Magnetic Flux Density (Hysteresis).................................................... 5
Typical Saturation Voltage vs Temperature(VDD=12V;Iout=20mA)................................. 5
Typical Supply Current vs VDD ........................................................................................ 6
Maximal Power Dissipation (MPD) Versus Temperature ................................................ 6
8.2
8.3
8.4
8.5
8.6
9
Application Information.............................................................................................7
9.1
Typical Three-Wire Application Circuit ............................................................................ 7
Two-Wire Circuit ............................................................................................................. 7
Automotive and Harsh, Noisy Environments Three-Wire Circuit ..................................... 7
9.2
9.3
10 Application Comments..............................................................................................7
11 Pin Definitions and Descriptions..............................................................................7
12 Reliability Information ...............................................................................................8
13 ESD Precautions ........................................................................................................8
14 Physical Characteristics............................................................................................9
14.1 UA Package Information................................................................................................. 9
14.2 SOT23 Package Information......................................................................................... 10
15 Disclaimer.................................................................................................................11
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3 Glossary of Terms
MilliTesla (mT), Gauss: Units of magnetic flux density; 1 milliTesla = 10 Gauss.
CMOS – Complementary Metal-Oxide Silicon - A technology for building logic circuits that employs both “N”
and “P” channel MOS transistors. It allows one to make ICs with lots of transistors that consume small
amounts of power.
4 Absolute Maximum Ratings
Parameter
Symbol Value
Units
V
Supply Voltage (Operating)
VDD
IDD
24
50
Supply Current (Fault)
mA
V
Output Voltage
VOUT
IOUT
PD
24
Output Current (Fault)
50
mA
mW
°C
Power Dissipation, UA/SO packages
Maximum Junction Temperature
Storage Temperature
700/389
165
TJ
TS
-50 to 150
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
Operating Temperature Range
Temperature Suffix “E”
Value
Units
°C
-40 to 85
Temperature Suffix “K”
Temperature Suffix “L”
-40 to 125
-40 to 150
°C
°C
5 US1881 Electrical Characteristics
DC operating parameters: TA = 25oC, VDD = 12V (unless otherwise specified)
Parameter
Symbol
VDD
Test Conditions
Operating
Min
3.5
Typ
Max Units
Supply Voltage
24
5.0
0.5
10
V
mA
V
Supply current
IDD
VDS(on)
IOFF
tr
B < BOP
1.1
2.0
0.4
Saturation Voltage
Output Leakage
Output Rise Time
Output Fall Time
Maximum Switching
Frequency
IOUT = 20mA, B > Bop, VDD=4.5÷18V
B < BRP, VOUT=24V
0.01
0.04
0.18
10
uA
us
VDD = 12V, RL = 1k, CL = 20pF
VDD = 12V, RL = 1k, CL = 20pF
Operating
tf
us
fsw
KHz
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6 Magnetic Characteristics
Parameter
Symbol
BOP
Test Conditions
Min
Typ
5.0
Max
9.0
Units
mT
E/LUA, E/LSO,Ta=25oC,Vdd=3.5 … 24V DC
Operating Point
1.0
E/LUA, E/LSO,Ta=25oC,Vdd=3.5 … 24V DC
E/LUA, E/LSO,Ta=25oC,Vdd=3.5 … 24V DC
EUA, ESO, Ta=85oC,Vdd=3.5 … 24V DC
EUA, ESO, Ta=85oC,Vdd=3.5 … 24V DC
EUA, ESO, Ta=85oC,Vdd=3.5 … 24V DC
KUA, KSO, Ta=125oC,Vdd=3.5 … 24V DC
KUA, KSO, Ta=125oC,Vdd=3.5 … 24V DC
KUA, KSO, Ta=125oC,Vdd=3.5 … 24V DC
LUA, LSO, Ta=150oC,Vdd=3.5 … 24V DC
LUA, LSO, Ta=150oC,Vdd=3.5 … 24V DC
LUA, LSO, Ta=150oC,Vdd=3.5 … 24V DC
Release Point
Hysteresis
BRP
BHYS
BOP
BRP
-9.0
7.0
0.5
-9.5
7.0
0.5
-9.5
7.0
0.5
-9.5
6.0
-5.0
10.0
5.0
-1.0
12.0
9.5
mT
mT
mT
mT
mT
mT
mT
mT
mT
mT
mT
Operating Point
Release Point
Hysteresis
-5.0
10.0
5.0
-0.5
12.0
9.5
BHYS
BOP
BRP
Operating Point
Release Point
Hysteresis
-5.0
10.0
5.0
-0.5
12.0
9.5
BHYS
BOP
BRP
Operating Point
Release Point
Hysteresis
-5.0
10.0
-0.5
12.5
BHYS
Note: 1 mT = 10 Gauss
7 Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced
technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated
circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less
power consumption.
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8 Performance Graphs – unless otherwise specified Ta=25oC, VDD=12V
Typical Magnetic Switch Points vs VDD Magnetic Switch Points vs Temperature
8.1
8.2
8.3
Output Voltage vs Magnetic Flux Density 8.4 Typical Saturation Voltage vs Tempera-
(Hysteresis) ture(VDD=12V;Iout=20mA)
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8.5
Typical Supply Current vs VDD
8.6
Maximal Power Dissipation (MPD) Versus Temperature
The thermal resistance ꢀ JA and rated power dissipation are defined in accordance with EIA/JESD51-3 Standard
.
Some differences may be observed between values in the specification tables and the performance graphs.
The performance graphs are based on initial characterization of several ICs from one lot. Hence a particular IC
may vary from the performance graphs but all ICs should meet the values stated in the specification tables.
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9 Application Information
9.1
Typical Three-Wire Application Circuit
9.2
Two-Wire Circuit
Note:
With this circuit, precise ON and OFF
currents can be detected using only two
connecting wires.
9.3
Automotive and Harsh, Noisy Environments
Three-Wire Circuit
The resistors RL and Rb can be used to
bias the input current. Refer to the part
specifications for limiting values.
BRP
BOP
:
:
IOFF = IR + IDD = VDD/Rb + IDD
ION = IOFF + IOUT = IOFF + VDD/RL
10 Application Comments
If a weak power supply is used or the chip is intended to be used in noisy environment, it is recommended
that figure 9.3 from the Application Information section is used. R1 and C1 form a RC filter, which bypasses
the disturbances over the supply pin.
If a continuous reverse polarity protection is required for supply voltages above 5 Volts, it is recommended to
use a diode instead of resistor, because the power dissipation demands become higher.
11 Pin Definitions and Descriptions
UA
SO Pin
Type
Description
Pins Pins Name
1
3
2
1
2
3
VDD
OUT
VSS
Supply
Output
Ground
Power Supply pin
Hall output pin
(clamped)
Ground pin
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12 Reliability Information
This Melexis device is classified and qualified regarding soldering technology, solderability and moisture
sensitivity level, as defined in this specification, according to following test methods:
°
°
°
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
CECC00802
Standard Method For The Specification of Surface Mounting Components (SMDs) of Assessed
Quality
°
°
°
EIA/JEDEC JESD22-B106
Resistance to soldering temperature for through-hole mounted devices
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
MIL 883 Method 2003 / EIA/JEDEC JESD22-B102
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
Based on Melexis commitment to environmental responsibility, European legislation (Directive on the
Restriction of the Use of Certain Hazardous substances, RoHS) and customer requests, Melexis has
installed a Roadmap to qualify their package families for lead free processes also.
Various lead free generic qualifications are running, current results on request.
For more information on Melexis lead free statement see quality page at our website:
http://www.melexis.com/html/pdf/MLXleadfree-statement.pdf
13 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
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14 Physical Characteristics
14.1 UA Package Information
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14.2 SOT23 Package Information
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15 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior
to designing this product into a system, it is necessary to check with Melexis for current information. This
product is intended for use in normal commercial applications. Applications requiring extended temperature
range, unusual environmental requirements, or high reliability applications, such as military, medical life-
support or life-sustaining equipment are specifically not recommended without additional processing by
Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering
of technical or other services.
© 2002 Melexis NV. All rights reserved.
For the latest version of this document. Go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe and Japan:
Phone: +32 1367 0495
All other locations:
Phone: +1 603 223 2362
E-mail: sales_europe@melexis.com
E-mail: sales_usa@melexis.com
ISO/TS 16949 and ISO14001 Certified
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