UNR2121(UN2121) [ETC]
Composite Device - Transistors with built-in Resistor ; 复合器件 - 晶体管具有内置电阻\n
| 型号： | UNR2121(UN2121) |
| 厂家： | 
ETC |
| 描述： | Composite Device - Transistors with built-in Resistor
|
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
(UN2121/2122/2123/2124/212X/212Y)
Silicon PNP epitaxial planer transistor
Unit: mm
+0.10
–0.05
0.40
+0.10
–0.06
0.16
For digital circuits
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
1
2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
(0.95) (0.95)
1.9±0.1
+0.20
–0.05
2.90
■ Resistance by Part Number
10˚
Marking Symbol (R1)
(R2)
• UNR2121 (UN2121)
• UNR2122 (UN2122)
• UNR2123 (UN2123)
• UNR2124 (UN2124)
• UNR212X (UN212X)
• UNR212Y (UN212Y)
7A
7B
7C
7D
7I
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
0.27 kΩ
3.1 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
7Y
4.6 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Internal Connection
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Symbol
VCBO
VCEO
IC
Rating
Unit
V
−50
−50
R1
B
C
E
V
−500
mA
mW
°C
R2
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C
Parameter
Collector cutoff current
UNR212X
Symbol
Conditions
Min
Typ
Max
−1
Unit
ICBO
V
V
V
CB = −50 V, IE = 0
CE = −50 V, IB = 0
EB = −6 V, IC = 0
µA
− 0.1
−1
Collector cutoff current
UNR212X
ICEO
µA
− 0.5
−5
Emitter
cutoff
UNR2121
IEBO
mA
UNR2122/212X/212Y
UNR2123/2124
−2
current
−1
Collector to base voltage
Forward UNR2121
VCBO
hFE
I
C = −10 µA, IE = 0
−50
40
V
V
CE = −10 V, IC = −100 mA
current
transfer
ratio
UNR2122/212Y
UNR2123/2124
UNR212X
50
60
20
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2002
SJH00008BED
1
UNR2121/2122/2123/2124/212X/212Y
■ Electrical Characteristics (continued) Ta = 25°C
Parameter
Collector to emitter saturation voltage
UNR212X
Symbol
Conditions
100 mA, IB 5 mA
Min
Typ
Max
Unit
VCE(sat)
IC
IC
IC
=
=
=
−
−
−
=
−
−
0.25
0.25
0.15
V
10 mA, IB
50 mA, IB
=
−
0.3 mA
−
−
UNR212Y
=
=
=
−5 mA
Output voltage high level
Output voltage low level
Transition frequency
VOH
VOL
fT
VCC
VCC
=
=
−
−
5 V, VB
5 V, VB
−
0.5 V, RL = 500
Ω
−4.9
V
V
−3.5 V, RL = 500
Ω
−
0.2
V
CB = −10 V, IE = 50 mA, f = 200 MHz
200
2.2
MHz
kΩ
Input
resis-
tance
UNR2121/2124
UNR2122
R1
−30%
+30%
4.7
UNR2123
10
UNR212X
UNR212Y
0.27
3.1
Resistance ratio
UNR2124
R1/R2
0.8
1.0
1.2
0.22
0.054
0.67
UNR212X
UNR2!12Y
Common characteristics chart
PT
Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta °C
SJH00008BED
2
UNR2121/2122/2123/2124/212X/212Y
Characteristics charts of UNR2121
IC VCE
VCE(sat)
IC
hFE
IC
400
300
200
100
0
−100
−240
IC / IB = 10
Ta = 25°C
VCE = −10 V
−30
−10
−200
IB = −1.0 mA
−160
Ta = 75°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
−3
−1
−120
Ta = 75°C
− 0.6 mA
− 0.5 mA
− 0.3
− 0.1
−80
−40
0
− 0.4 mA
− 0.3 mA
25°C
25°C
− 0.2 mA
− 0.1 mA
− 0.03
− 0.01
−25°C
−25°C
−1
−3
−10 −30 −100 −300 −1000
−1
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
( )
V
Collector current IC mA
Collector to emitter voltage VCE
Cob
VCB
IO
VIN
VIN
IO
12
10
8
−100
−10000
f = 1 MHz
IE = 0
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
−30
−10
−3000
−1000
−3
−1
−300
−100
6
− 0.3
− 0.1
−30
−10
4
2
− 0.03
− 0.01
−3
−1
0
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
( )
V
Collector to base voltage VCB
(
)
( )
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR2122
IC VCE
VCE(sat)
IC
hFE
IC
160
120
80
−100
−300
IC / IB = 10
Ta = 75°C
Ta = 25°C
VCE = −10 V
−30
−10
−250
IB = −1.0 mA
25°C
−200
−150
−100
−50
0
− 0.9 mA
− 0.8 mA
− 0.7 mA
−3
−1
Ta = 75°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.3
− 0.1
−25°C
25°C
40
− 0.2 mA
− 0.1 mA
−25°C
− 0.03
− 0.01
0
−1
−3
−10 −30 −100 −300 −1000
−1
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
( )
Collector current IC mA
(
)
Collector current IC mA
( )
V
Collector to emitter voltage VCE
SJH00008BED
3
UNR2121/2122/2123/2124/212X/212Y
Cob
VCB
IO
VIN
VIN
IO
24
20
16
12
8
−10000
−100
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−3000
−1000
−30
−10
−300
−100
−3
−1
−30
−10
− 0.3
− 0.1
4
−3
−1
− 0.03
− 0.01
0
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
− 0.1 − 0.3 −1
−3
−10 −30 −100
( )
V
( )
V
Collector to base voltage VCB
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UNR2123
IC VCE
VCE(sat)
IC
hFE
IC
200
150
100
50
−240
−100
I
C
/ IB = 10
Ta = 75°C
Ta = 25°C
VCE = −10 V
25°C
−30
−10
−200
IB = −1.0 mA
−160
− 0.9 mA
− 0.8 mA
− 0.7 mA
−3
−1
−25°C
−120
− 0.6 mA
Ta = 75°C
− 0.5 mA
−
−
0.3
0.1
−80
− 0.4 mA
25°C
− 0.3 mA
−40
− 0.2 mA
− 0.03
− 0.01
−25°C
− 0.1 mA
0
−1
0
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
−1
−3
−10 −30 −100 −300 −1000
(
)
Collector current IC mA
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
24
20
16
12
8
−10000
−100
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
T
a = 25°C
−3000
−1000
−30
−10
−300
−100
−3
−1
−30
−10
− 0.3
− 0.1
4
−3
−1
− 0.03
− 0.01
0
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
− 0.1 − 0.3 −1
−3
−10 −30 −100
( )
V
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
SJH00008BED
4
UNR2121/2122/2123/2124/212X/212Y
Characteristics charts of UNR2124
IC VCE
VCE(sat)
IC
hFE
IC
400
350
300
250
200
150
100
50
−300
−100
IC / IB = 10
Ta = 25°C
VCE = −10 V
−30
−10
−250
IB = −1.0 mA
−200
−150
−100
−50
0
− 0.9 mA
−3
−1
− 0.8 mA
− 0.7 mA
− 0.6 mA
Ta = 75°C
25°C
− 0.5 mA
− 0.4 mA
Ta = 75°C
−25°C
− 0.3
− 0.1
25°C
− 0.3 mA
− 0.2 mA
− 0.03
− 0.01
−25°C
− 0.1 mA
0
−1
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
−1
−3
−10 −30 −100 −300 −1000
(
)
( )
V
(
)
Collector current IC mA
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
IO
VIN
VIN
IO
24
20
16
12
8
−10000
−100
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
T
a = 25°C
−3000
−1000
−30
−10
−300
−100
−3
−1
−30
−10
− 0.3
− 0.1
4
−3
−1
− 0.03
− 0.01
0
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
− 0.1 − 0.3 −1
−3
−10 −30 −100
( )
V
Collector to base voltage VCB
( )
V
(
)
Input voltage VIN
Output current IO mA
Characteristics charts of UNR212X
IC VCE
VCE(sat)
IC
hFE
IC
−100
240
200
160
120
80
−240
IC / IB = 10
VCE = −10 V
Ta = 25°C
−30
−10
−200
IB = −1.6 mA
−160
−1.4 mA
−3
−1
−1.2 mA
Ta = 75°C
25°C
−120
−1.0 mA
− 0.8 mA
− 0.3
− 0.1
Ta = 75°C
−80
−25°C
25°C
− 0.6 mA
–25°C
− 0.4 mA
40
−40
− 0.03
− 0.01
− 0.2 mA
0
−1
0
−1
−3
−10 −30 −100 −300 −1000
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
(
)
(
)
( )
V
Collector current IC mA
Collector current IC mA
Collector to emitter voltage VCE
SJH00008BED
5
UNR2121/2122/2123/2124/212X/212Y
Cob
VCB
VIN
IO
24
20
16
12
8
−100
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
T
a = 25°C
−30
−10
−3
−1
− 0.3
− 0.1
4
− 0.03
− 0.01
0
−1
−3
−10
−30
−100
− 0.1 − 0.3 −1
−3
−10 −30 −100
( )
V
Collector to base voltage VCB
(
)
Output current IO mA
Characteristics charts of UNR212Y
IC VCE
VCE(sat)
IC
hFE
IC
240
200
160
120
80
−240
−100
IC / IB = 10
VCE = −10 V
Ta = 25°C
−30
−10
−200
IB = −1.2 mA
Ta = 75°C
−160
−1.0 mA
−3
−1
25°C
− 0.8 mA
−120
−25°C
− 0.6 mA
− 0.3
− 0.1
Ta = 75°C
25°C
−80
− 0.4 mA
40
−40
−25°C
− 0.03
− 0.01
− 0.2 mA
0
−1
0
−3
−10 −30 −100 −300 −1000
0
−2
−4
−6
−8
−10 −12
−1
−3
−10 −30 −100 −300 −1000
(
)
Collector current IC mA
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob
VCB
VIN
IO
24
20
16
12
8
−100
VO = − 0.2 V
a = 25°C
f = 1 MHz
IE = 0
T
T
a = 25°C
−30
−10
−3
−1
− 0.3
− 0.1
4
− 0.03
− 0.01
0
−1
−3
−10
−30
−100
− 0.1 − 0.3 −1
−3
−10 −30 −100
( )
V
Collector to base voltage VCB
(
)
Output current IO mA
SJH00008BED
6
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
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Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
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2001 MAR
相关型号：
UNR2122
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits
PANASONIC
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