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UNR211F(UN211F) [ETC]

複合デバイス - 抵抗内蔵型トランジスタ ;
UNR211F(UN211F)
型号: UNR211F(UN211F)
厂家: ETC    ETC
描述:

複合デバイス - 抵抗内蔵型トランジスタ

文件: 总17页 (文件大小:551K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

UNR211FS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211F|UN211F

Composite Device - Transistors with built-in Resistor

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ETC

UNR211H

Silicon PNP epitaxial planar type

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PANASONIC

UNR211H(UN211H)

Composite Device - Transistors with built-in Resistor

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ETC

UNR211HS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211H|UN211H

Composite Device - Transistors with built-in Resistor

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-
ETC

UNR211L

Silicon PNP epitaxial planar type

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PANASONIC

UNR211L(UN211L)

複合デバイス - 抵抗内蔵型トランジスタ

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ETC

UNR211LR

暂无描述

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PANASONIC

UNR211LS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211L|UN211L

Composite Device - Transistors with built-in Resistor

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ETC

UNR211M

Silicon PNP epitaxial planar type

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PANASONIC

UNR211M(UN211M)

複合デバイス - 抵抗内蔵型トランジスタ

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ETC

UNR211MQ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211MR

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211MS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC

UNR211M|UN211M

Composite Device - Transistors with built-in Resistor

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-
ETC

UNR211N

Silicon PNP epitaxial planar type

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-
PANASONIC

UNR211N(UN211N)

Composite Device - Transistors with built-in Resistor

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-
ETC

UNR211NQ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN

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PANASONIC