UNR211FS [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN;
| 型号： | UNR211FS |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G1, SC-59, 3 PIN 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总17页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
+0.10
–0.05
0.40
+0.10
For digital circuits
0.16
–0.06
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
1
2
• Mini type package allowing easy automatic insertion through tape
(0.95) (0.95)
packing and magazine packing
1.9 0.1
+0.20
2.90
–0.05
■ Resistance by Part Number
10˚
Marking Symbol (R1)
(R2)
• UNR2110 (UN2110)
• UNR2111 (UN2111)
• UNR2112 (UN2112)
• UNR2113 (UN2113)
• UNR2114 (UN2114)
• UNR2115 (UN2115)
• UNR2116 (UN2116)
• UNR2117 (UN2117)
• UNR2118 (UN2118)
• UNR2119 (UN2119)
• UNR211D (UN211D)
• UNR211E (UN211E)
• UNR211F (UN211F)
• UNR211H (UN211H)
• UNR211L (UN211L)
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6M
6N
6O
6P
6Q
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
R1
B
C
E
R2
• UNR211M (UN211M) EI
• UNR211N (UN211N)
• UNR211T (UN211T)
• UNR211V (UN211V)
• UNR211Z (UN211Z)
EW
EY
FC
FE
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
−50
V
Collector current
IC
PT
−100
mA
mW
°C
200
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00006CED
1
UNR211x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
V
− 0.1
− 0.5
− 0.01
− 0.1
− 0.2
µA
µA
mA
ICEO
Emitter-base UNR2110/2115/2116/2117 IEBO
cutoff current UNR2113
(Collector open)
UNR2112/2114/211D/
211E/211M/211N/211T
UNR211Z
− 0.4
− 0.5
−1.0
−1.5
−2.0
20
UNR2111
UNR211F/211H
UNR2119
UNR2118/211L/211V
Forward current UNR211V
hFE
VCE = −10 V, IC = −5 mA
6
20
30
35
60
60
80
80
160
transfer ratio UNR2118/211L
UNR2119/211D/211F/211H
UNR2111
UNUNR2112/211E
UNR211Z
200
UNR2113/2114/211M
UNR211N/211T
400
460
UNR2110*/2115*/2116*/2117*
Collector-emitter saturation voltage
UNR211V
VCE(sat) IC = −10 mA, IB = − 0.3 mA
IC = −10 mA, IB = −1.5 mA
− 0.25
V
Output voltage high-level
Output voltage low-level
UNR2113
VOH
VOL
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
−4.9
V
V
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCC = −5 V, VB = −10 V, RL = 1 kΩ
VCC = −5 V, VB = −6 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
− 0.2
UNR211D
UNR211E
Transition frequency
fT
80
MHz
UNR2114/2119/211E
211F/211H
150
Input resistance UNR2118
UNR2119
R1
−30% 0.51 +30%
kΩ
1.0
2.2
4.7
10
UNR211H/211M/211V
UNR2116/211F/211L/211N/211Z
UNR2111/2114/2115
UNR2112/2117/211T
UNR2110/2113/211D/211E
22
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
SJH00006CED
2
UNR211x Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
Resistance ratio UNR211M
UNR211N
Symbol
Conditions
Min
Typ
0.047
0.1
Max
Unit
R1/R2
UNR2118/2119
0.08
0.10
0.21
0.21
0.22
0.47
0.47
1.0
0.12
UNR211Z
UNR2114
0.17
0.17
0.25
0.27
UNR211H
UNR211T
UNR211F
0.37
0.57
UNR211V
UNR2111/2112/2113/211L
UNR211E
0.8
1.70
3.7
1.0
1.2
2.60
5.7
2.14
4.7
UNR211D
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR2110
IC VCE
VCE(sat) IC
hFE IC
−120
400
300
200
100
0
−100
−10
IC / IB = 10
Ta = 25°C
VCE = –10 V
IB = −1.0 mA
− 0.9 mA
−100
−80
−60
−40
−20
0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3mA
Ta = 75°C
−1
25°C
Ta = 75°C
− 0.2mA
− 0.1mA
−25°C
25°C
−0.1
−25°C
−0.01
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−0.1
−1
−10
−100
(
)
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
SJH00006CED
3
UNR211x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
−100
−10
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
(
)
V
Output current IO mA
Input voltage VIN
Characteristics charts of UNR2111
IC VCE
VCE(sat) IC
hFE IC
160
120
80
−100
−10
−1
−160
IC / IB = 10
Ta = 75°C
25°C
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−120
−0.8 mA
−25°C
−0.7 mA
−0.6 mA
−0.5 mA
−80
−40
0
−0.4 mA
Ta = 75°C
25°C
−0.3 mA
−0.2 mA
40
−0.1
−25°C
−0.1 mA
0
−1
−
0.01
−0.1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
SJH00006CED
4
UNR211x Series
Characteristics charts of UNR2112
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9mA
−0.8mA
−120
−80
−40
0
−0.7mA
−0.6mA
−0.5mA
−0.4mA
Ta = 75°C
25°C
−0.3mA
−0.2mA
Ta = 75°C
−25°C
25°C
−0.1
−25°C
−0.1mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
(
)
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR2113
IC VCE
VCE(sat) IC
hFE IC
−160
−100
−10
−1
400
300
200
100
0
IC / IB = 10
IB = −1.0 mA
−0.9 mA
Ta = 25°C
VCE = −10 V
Ta = 75°C
25°C
−0.8 mA
−0.7 mA
−0.6 mA
−120
−80
−40
0
−0.5 mA
−0.4 mA
−25°C
−0.3 mA
−0.2 mA
Ta = 75°C
25°C
−0.1
−25°C
− 0.1 mA
−
0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
)
Collector current IC mA
−100
−1000
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
(
SJH00006CED
5
UNR211x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
( )
V
Input voltage VIN
Characteristics charts of UNR2114
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−160
−100
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
−0.6 mA
Ta = 75°C
−0.5 mA
−80
−40
0
−0.4 mA
−0.3 mA
−0.2 mA
25°C
Ta = 75°C
−25°C
25°C
−0.1
−0.1 mA
−25°C
−
0.01
−0.1
−1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−1000
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
)
Output current IO mA
−10
−100
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
(
SJH00006CED
6
UNR211x Series
Characteristics charts of UNR2115
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
400
300
200
100
0
−160
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−120
Ta = 75°C
−0.6 mA
−0.5 mA
−0.4 mA
−80
25°C
−0.3 mA
−0.2 mA
Ta = 75°C
−25°C
25°C
−0.1
−40
−0.1 mA
−25°C
−
0.01
−0.1
0
−1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
V
O
= − 0.2 V
VO = −5 V
Ta = 25˚C
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
( )
V
Input voltage VIN
Characteristics charts of UNR2116
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−100
−10
−1
−160
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
Ta = 75°C
−0.6 mA
−0.5 mA
−80
−40
0
−0.4 mA
25°C
−0.3 mA
Ta = 75°C
−25°C
25°C
−0.2 mA
−0.1 mA
−0.1
−25°C
−1
−
0.01
−0.1
−1
−10
−100
−1000
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
SJH00006CED
7
UNR211x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
(
)
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR2117
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−120
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−100
−80
−60
−40
−20
0
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−0.4 mA
Ta = 75°C
T
= 75°C
a
25°C
−0.3 mA
−0.2 mA
25°C
−0.1
−25°C
−25°C
−0.1 mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
(
)
V
Collector current IC mA
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
V
Input voltage VIN
Collector-base voltage VCB (V)
(
)
Output current IO mA
SJH00006CED
8
UNR211x Series
Characteristics charts of UNR2118
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−160
−0.8 mA
−0.7 mA
Ta = 75°C
25°C
−120
Ta = 75°C
−0.6 mA
−25°C
−0.5 mA
−0.4 mA
−0.3 mA
−0.2 mA
−80
−40
0
25°C
−0.1
−25°C
−0.1 mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR2119
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−160
Ta = 75°C
−0.7 mA
−120
Ta = 75°C
25°C
−25°C
−80
−40
0
−0.6 mA
−0.5 mA
25°C
−0.1
40
−0.4 mA
−0.3 mA
−0.2 mA
−0.1 mA
−10 −12
−25°C
−
0.01
−0.1
0
−1
0
−2
−4
−6
−8
−1
−10
−100
−10
)
Collector current IC mA
−100
−1000
(
)
V
(
)
(
Collector-emitter voltage VCE
Collector current IC mA
SJH00006CED
9
UNR211x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
V
Collector-base voltage VCB (V)
Input voltage VIN
Characteristics charts of UNR211D
IC VCE
VCE(sat) IC
hFE IC
160
120
80
−60
−
100
IB = − 1.0 mA
Ta = 25˚C
IC / IB = 10
VCE = −10 V
Ta = 75°C
− 0.9 mA
− 0.8 mA
−50
−
10
−40
25°C
− 0.3 mA
− 0.2 mA
−25°C
−30
−1
− 0.7 mA
− 0.6 mA
Ta = 75°C
− 0.5 mA
−20
− 0.4 mA
25°C
40
−
0.1
− 0.1 mA
−10
−25°C
0
−1
0
−
0.01
−0.1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
(
)
Collector current IC mA
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
Collector-base voltage VCB (V)
(
)
Output current IO mA
(
)
V
Input voltage VIN
SJH00006CED
10
UNR211x Series
Characteristics charts of UNR211E
IC VCE
VCE(sat) IC
hFE IC
−60
400
300
200
100
0
−100
−10
IC / IB = 10
IB = −1.0 mA
− 0.9 mA
Ta = 25°C
VCE = −10 V
− 0.8 mA − 0.7 mA
−50
−40
−30
−20
−10
0
− 0.3 mA
− 0.2 mA
−1
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
Ta = 75°C
25°C
− 0.1 mA
−0.1
25°C
−25°C
−25°C
−0.01
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−0.1
−1
−10
−100
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
−104
−103
−102
−10
−1
−100
−10
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
(
)
( )
Input voltage VIN V
Output current IO mA
Collector-base voltage VCB (V)
Characteristics charts of UNR211F
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
Ta = 75°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−200
−160
−120
−80
−40
0
25°C
−25°C
Ta = 75°C
−0.5 mA
25°C
−0.4 mA
−0.3 mA
−0.2 mA
−0.1
40
−25°C
−0.1 mA
−10 −12
0
−1
−
0.01
−0.1
0
−2
−4
−6
−8
−10
−100
−1000
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00006CED
11
UNR211x Series
Cob VCB
IO VIN
VIN IO
6
−104
−103
−102
−10
−1
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Collector-base voltage VCB (V)
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR211H
IC VCE
VCE(sat) IC
hFE IC
−120
240
200
160
120
80
−100
−10
IC / IB = 10
Ta = 25°C
VCE = −10 V
−100
−80
−60
−40
−20
0
IB = −0.5 mA
−0.4 mA
Ta = 75°C
25°C
−1
Ta = 75°C
25°C
−0.3 mA
−25°C
−0.2 mA
−0.1 mA
−0.1
−0.01
40
−25°C
0
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
−100
−1000
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Cob VCB
VIN IO
6
5
4
3
2
1
0
−100
−10
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−1
−10
−100
−0.1
−1
−10
−100
(
)
Collector-base voltage VCB (V)
Output current IO mA
SJH00006CED
12
UNR211x Series
Characteristics charts of UNR211L
IC VCE
VCE(sat) IC
hFE IC
−100
−10
240
200
160
120
80
−240
IC / IB = 10
VCE = −10 V
Ta = 25°C
−200
−160
IB = −1.0 mA
−1
−120
Ta = 75°C
− 0.8 mA
Ta = 75°C
25°C
−80
−40
0
− 0.6 mA
25°C
−25°C
−0.1
− 0.4 mA
− 0.2 mA
–10 –12
−25°C
40
− 0.01
0
−1
−1
−10
−100
−1000
0
–2
–4
–6
–8
−10
−100
−1000
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
(
)
Collector current IC mA
Cob VCB
VIN IO
6
5
4
3
2
1
0
−100
−10
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
−1
−10
−100
(
)
Output current IO mA
Collector-base voltage VCB (V)
Characteristics charts of UNR211M
IC VCE
VCE(sat) IC
hFE IC
−240
500
400
300
200
100
0
−10
−1
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−160
−0.6 mA
Ta = 75°C
25°C
−120
−0.1
−0.01
−0.001
Ta = 75°C
25°C
−0.5 mA
−0.4 mA
−0.3 mA
−25°C
−80
−25°C
−40
−0.2 mA
−0.1 mA
0
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−1
−10
−100
−1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00006CED
13
UNR211x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
10
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
8
6
4
2
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR211N
IC VCE
VCE(sat) IC
hFE IC
−200
−10
300
250
200
150
100
50
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−150
−100
−50
0
Ta = 75°C
−
1
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
25°C
−25°C
Ta = 75°C
25°C
−0.1
− 0.3 mA
− 0.2 mA
−25°C
− 0.1 mA
−0.01
0
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
–1
–10
–100
–1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
−104
−103
−102
–10
–1
6
5
4
3
2
1
0
−100
−10
f = 1 MHz
IE = 0
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
–1
–10
–100
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Output current IO (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
SJH00006CED
14
UNR211x Series
Characteristics charts of UNR211T
IC VCE
VCE(sat) IC
hFE IC
−200
300
250
200
150
100
50
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
Ta = 75°C
−150
IB = −1.0 mA
–0.9 mA
–0.8 mA
–0.7 mA
–0.6 mA
–0.5 mA
25°C
−100
−50
0
Ta = 75°C
−25°C
− 0.1
− 0.4 mA
− 0.3 mA
25°C
−25°C
− 0.2 mA
− 0.1 mA
− 0.01
0
−1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−10
−100
−1000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
− 0.1
−1
−10
−100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR211V
IC VCE
VCE(sat) IC
hFE IC
−12
12
10
8
−10
IC / IB = 10
VCE = −10 V
Ta = 25°C
Ta = 75°C
IB = −1.0 mA
−10
− 0.9 mA
25°C
− 0.8 mA
−
1
−8
− 0.7 mA
Ta = 75°C
25°C
− 0.6 mA
−6
−4
−2
0
6
−25°C
− 0.5 mA
− 0.4 mA
−0.1
4
−25°C
− 0.3 mA
− 0.2 mA
2
− 0.1 mA
−0.01
0
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
–1
–10
–100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
SJH00006CED
15
UNR211x Series
IO VIN
VIN IO
−104
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
−103
−102
−10
−1
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR211Z
IC VCE
VCE(sat) IC
hFE IC
300
250
200
150
100
50
−200
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
−150
IB = −1.0 mA
Ta = 75°C
−25°C
− 0.9 mA
25°C
− 0.8 mA
−100
− 0.7 mA
Ta = 75°C
−25°C
− 0.6 mA
− 0.5 mA
− 0.1
25°C
− 0.4 mA
−50
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
−1
0
− 0.01
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Cob VCB
IO VIN
VIN IO
6
5
4
3
2
1
0
−104
−103
−102
−10
–1
−100
−10
VO = –5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
− 0.1
− 0.01
−1
−10
−100
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
Output current IO (mA)
Input voltage VIN (V)
SJH00006CED
16
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
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2003 SEP
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