TISP6NTP2B [ETC]
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS; QUAD正向传导BUFFERED P- GATE闸流体
| 型号： | TISP6NTP2B |
| 厂家： | 
ETC |
| 描述： | QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS |
| 文件： | 总8页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP6NTP2B
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
TISP6NTP2B Programmable Protector
Overvoltage Protection for ISDN DC Feeds:
– Supply Voltages Down to -120 V
D Package (Top View)
– Low 5 mA max. Gate Triggering Current
– High 150 mA min. (25 °C) Holding Current
1
2
3
4
8
7
6
5
K2
A
K1
G1,G2
G3,G4
K3
Rated for Common Impulse Waveforms
A
I
K4
Voltage Impulse
Form
Current Impulse
Shape
TSP
A
MDRXAM
10/1000 µs
10/700 µs
1.2/50 µs
2/10 µs
10/1000 µs
5/310 µs
8/20 µs
20
25
60
70
Device Symbol
K1
2/10 µs
.............................................. UL Recognized Component
G1,G2
Description
The TISP6NTP2B has an array of four buffered P-gate forward
conducting thyristors with twin commoned gates and a common
anode connection. Each thyristor cathode has a separate
terminal connection. An antiparallel anode-cathode diode is
connected across each thyristor. The buffer transistors reduce
the gate supply current.
K2
A
A
K3
In use, the cathodes of an TISP6NTP2B thyristors are connected
to the four conductors to be protected (see Figure 2 and Figure
3). Each gate is connected to the appropriate negative voltage
feed. The anode of the TISP6NTP2B is connected to the system
common. The TISP6NTP2B is in an 8-pin small-outline surface
mount package.
G3,G4
Positive overvoltages are clipped to common by forward
conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a
negative overvoltage draws a current through the 6.8 Ω resistor
and the voltage developed triggers the thyristor on. In Figure 3,
negative overvoltages are initially clipped close to the negative
supply by emitter follower action of the TISP6NTP2B buffer
transistor. If sufficient clipping current flows, the TISP6NTP2B
thyristor will regenerate and switch into a low voltage on-state
condition. As the negative overvoltage subsides, the high
holding current of the TISP6NTP2B prevents d.c. latchup.
SDRXAI
K4
How To Order
For Standard
For Lead Free
Termination Finish Termination Finish
Order As
Order As
Device
Package
Carrier
Tape and Reel TISP6NTP2BDR
TISP6NTP2BDR-S
TISP6NTP2BD-S
TISP6NTP2B D, Small-Outline
Tube
TISP6NTP2BD
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
-130
-120
Unit
V
Repetitive peak off-state voltage, I = 0
V
DRM
G
Repetitive peak gate-cathode voltage, V = 0
KA
V
V
GKRM
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
20
0.2/310 µs (I3124, open-circuit voltage wave shape 0.5/700 µs)
5/310 µs (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 µs)
8/20 µs (IEC 61000-4-5:1995, open-circuit voltage wave shape 1.2/50 µs)
25
25
60
I
A
A
TSP
2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
Non-repetitive peak on-state current, 50/60 Hz, (see Notes 1 and 2)
100 ms
70
7
1 s
5 s
2.7
1.5
I
TSM
300 s
900 s
0.45
0.43
Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1)
Operating free-air temperature range
I
25
A
GSM
T
-40 to +85
-40 to +150
-65 to +150
°C
°C
°C
A
Junction temperature
T
J
Storage temperature range
T
stg
NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-
anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
Recommended Operating Conditions
Min.
Typ.
Max.
Unit
Series resistor for ITU-T recommendation K.20
Seeries resistor for ITU-T recommendation K.21
12
20
R1, R2
Ω
Electrical Characteristics for any Section, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min.
Typ.
Max.
-5
Unit
µA
T = 25 °C
J
I
Off-state current
V
= V
, I = 0
D
D
DRM G
T = 85 °C
-50
µA
J
I = 0.6 A, t = 500 µs, V = -50 V
3
5
F
w
GG
V
Forward voltage
Holding current
V
F
I = 18 A, t = 500 µs, V = -50 V
F
w
GG
I
I = -1 A, di/dt = 1A/ms, V = -50 V, T = 85 °C
-150
mA
µA
µA
H
T
GG
J
T = 25 °C
-5
J
I
Gate reverse current
V
= V
, V = 0
GKS
GG
GKRM AK
T = 85 °C
-50
J
Gate reverse current,
on state
I
I = -0.6 A, t = 500 µs, V = -50 V
-1
mA
GAT
T
w
GG
Gate reverse current,
forward conducting
state
I
I = 0.6 A, t = 500 µs, V = -50 V
-40
mA
GAF
F
w
GG
I
Gate trigger current
Gate trigger voltage
I = -5 A, t
≥
≥
20 µs, V = -50 V
5
mA
V
GT
T
p(g)
p(g)
GG
V
I = -5 A, t
20 µs, V = -50 V
2.5
GT
T
GG
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
Electrical Characteristics for any Section, T = 25 °C (Unless Otherwise Noted) (continued)
A
Parameter
Test Conditions
Min.
Typ.
Max.
100
60
Unit
pF
V
= -3 V
Anode-cathode off-
state capacitance
D
C
f = 1 MHz, V = 1 V, I = 0, (see Note 3)
AK
d
G
V
= -50 V
pF
D
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2
R
Junction to free air thermal resistance
P
= 0.52 W, T = 85 °C, 5 cm , FR4 PCB
160
°C/W
θJA
tot
A
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
Parameter Measurement Information
PRINCIPAL TERMINAL V-I CHARACTERISTIC
GATE TRANSFER
CHARACTERISTIC
+i
+iK
Quadrant I
IFSP (= |ITSP|)
Forward
Conduction
Characteristic
IFSM (= |ITSM|)
IF
IF
VF
VGK(BO)
IGT
VGG
VD
+v
-iG
+iG
-v
ID
IGAF
I(BO)
IH
IS
VT
IGAT
VS
V(BO)
IT
IT
ITSM
IG
Quadrant III
Switching
IK
ITSP
Characteristic
-i
-iK
PM6XAIA
Figure 1. Principal Terminal And Gate Transfer Characteristics
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
R1A
R1B
t°
t°
ELECTRONIC
SOURCE
"0 V"
-VE
6.8 Ω
NUMBER OF
NEGATIVE CLAMP
DIODES DEPENDS
ON "0V" POTENTIAL
ELECTRONIC
SINK
TWIN
ISDN
POWER
SUPPLY
TISP6NTP2B
NEGATIVE
SUPPLY
-VE
ELECTRONIC
SINK
"0 V"
ELECTRONIC
SOURCE
6.8 Ω
R2B
t°
R2A
t°
Figure 2. Protection of Two ISDN Power Feeds
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
R1A
R1B
R2A
R2B
ELECTRONIC
SINK
-VE
0
t°
t°
t°
t°
t°
t°
t°
t°
R
ELECTRONIC
SINK
-VE
0
R
RESISTOR "R"
MAY BE NEEDED
IF SINK HAS
INTERNAL
CLAMP DIODE
ISDN
POWER
SUPPLY
ELECTRONIC
SINK
-VE
0
R
ELECTRONIC
SINK
-VE
0
R
NEGATIVE
SUPPLY
TISP6NTP2B
Figure 3. Protection of Four ISDN Power Feeds
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
MECHANICAL DATA
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
4.80 - 5.00
(0.189 - 0.197)
8
7
6
5
5.80 - 6.20
(0.228 - 0.244)
INDEX
3.81 - 4.00
(0.150 - 0.157)
1
3
2
4
4.60 - 5.21
(0.181 - 0.205)
0.25 - 0.50
(0.010 - 0.020)
1.35 - 1.75
(0.053 - 0.069)
7 ° NOM
3 Places
x 45 ° N0M
0.102 - 0.203
(0.004 - 0.008)
4 ° ± 4 °
0.36 - 0.51
(0.014 - 0.020)
8 Places
7 ° NOM
4 Places
0.28 - 0.79
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
(0.011 - 0.031)
0.190 - 0.229
(0.0075 - 0.0090)
0.51 - 1.12
(0.020 - 0.044)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXAAC
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
MECHANICAL DATA
D008 Tape DImensions
D008 Package (8-pin Small Outline) Single-Sprocket Tape
3.90 - 4.10
1.50 - 1.60
(.154 - .161)
(.059 - .063)
1.95 - 2.05
7.90 - 8.10
0.40
(.077 - .081)
(.311 - .319)
(0.016)
0.8
(0.03)
MIN.
5.40 - 5.60
(.213 - .220)
11.70 - 12.30
(.461 - .484)
Cover
Tape
6.30 - 6.50
(.248 - .256)
1.50
(.059)
ø
MIN.
0 MIN.
Carrier Tape
Embossment
2.0 - 2.2
(.079 - .087)
Direction of Feed
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
MDXXATB
330 +0.0/-4.0
Reel diameter:
(12.992 +0.0/-.157)
100 ± 2.0
Reel hub diameter:
(3.937 ± .079)
13.0 ± 0.2
Reel axial hole:
(.512 ± .008)
B. 2500 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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