P4C1682 [ETC]
ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS; 超高速4K ×4的静态CMOS RAMS
| 型号： | P4C1682 |
| 厂家： | 
ETC |
| 描述： | ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4C1681, P4C1682
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Separate Inputs and Outputs
Full CMOS, 6T Cell
– P4C1681 Input Data at Outputs during Write
– P4C1682 Outputs in High Z during Write
High Speed (Equal Access and Cycle Times)
– 12/15/20/25 ns (Commercial)
– 20/25/35ns (P4C1682 Military)
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOIC
– 24-Pin 300 mil SOJ
– 24-Pin CERDIP
Low Power Operation (Commercial)
– 715 mW Active – 12, 15
– 550 mW Active – 20/25/35
– 193 mW Standby (TTL Input)
– 83 mW Standby (CMOS Input)
– 28-Pin LCC (450 mil x 450 mil)
Single 5V ± 10%Power Supply
DESCRIPTION
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby. For the P4C1682 and
P4C1681, power is only 83 mW standby with CMOS input
.
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra
high speed static RAMs similar to the P4C168, but with
separate data I/O pins. The P4C1681 features a
transparent write operation; the outputs of the P4C1682
are in high impedance during the write cycle. All devices
have low power standby modes. The RAMs operate from
a single 5V ± 10% tolerance power supply.
levels.
The P4C1681 and P4C1682 are available in 24-pin 300
mil DIP and SOIC packages providing excellent board
level densities. The P4C1682 is also available in a 28-pin
LCC package.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
A
V
A
A
A
A
I
A
A
A
A
1
24
23
22
21
20
19
18
17
16
15
14
13
16,384-BIT
ROW
CC
11
10
9
0
1
2
3
MEMORY
(7)
SELECT
2
ARRAY
3
A
4
26
25
4
3
2
28 27
A
A
A
A
5
6
9
8
4
5
I1
I2
I3
I4
O1
O2
O3
O4
1
A
A
5
24
23
4
5
8
INPUT
DATA
CONTROL
I
7
6
4
NC
NC
COLUMN I/O
4
NC
NC
8
22
21
A
A
7
I
3
6
7
9
A
6
A
7
8
O
4
3
2
1
I
20
19
10
11
3
9
O
O
O
I
1
I
O
4
POWER
DOWN
COLUMN
SELECT
1
10
11
12
I
13 14 15 16 17
2
CE
12
18
CE
WE
GND
WE
A
A
(5)
P4C1682
P4C1681
LCC (L5-1)
TOP VIEW
DIP (P4,D4), SOIC (S4), SOJ (J4)
TOP VIEW
Means Quality, Service and Speed
1Q97
41
P4C1681, P4C1682
MAXIMUM RATINGS1
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TBIAS
Temperature Under
Bias
–55 to +125
°C
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
VTERM
TA
V
1.0
50
IOUT
mA
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING
VCC = 5.0V, TA = 25°C, f = 1.0MHz
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Symbol
Parameter
Conditions Typ. Unit
VCC
Grade(2)
GND
Temperature
–55°C to +125°C
0°C to +70°C
CIN
VIN = 0V
OUT = 0V
pF
pF
Military
5.0V ± 10%
5.0V ± 10%
0V
0V
Input Capacitance
Output Capacitance
5
7
Commercial
COUT
V
DC ELECTRICAL CHARACTERISTICS
Over Recommended operating temperature and supply voltages(2)
P4C1681
P4C1682
Sym.
Test Conditions
Parameter
Unit
Min
Max
Input High Voltage
V
VCC +0.5
2.2
VIH
VIL
Input Low Voltage
–0.5(3)
VCC –0.2
–0.5(3)
0.8
VCC +0.5
0.2
V
V
V
V
V
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
VHC
VLC
VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.
–1.2
VCD
VOL
Output Low Voltage
(TTL Load)
0.4
VOLC Output Low Voltage
(CMOS Load)
IOLC = +100 µA, VCC = Min.
IOH = –4 mA, VCC = Min.
IOHC = –100 µA, VCC = Min.
V
V
V
0.2
VOH
Output High Voltage
(TTL Load)
2.4
VOHC
VCC –0.2
Output High Voltage
(CMOS Load)
VCC = Max.
VIN = GND to VCC
Mil.
Comm'l
ILI
Input Leakage Current
+10
+5
–10
–5
µA
µA
VCC = Max.
CE = VIH
Mil.
Comm'l
–10
–5
ILO
Output Leakage Current
+10
+5
µA
µA
VOUT = GND to VCC
Notes:
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
42
P4C1681, P4C1682
POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C1681
P4C1682
Symbol
Parameter
Test Conditions
Unit
Min
Max
ICC
Dynamic Operating
Current – 12, 15
VCC = Max., f = Max.,
Outputs Open
Comm'l
—
130
mA
ICC
ISB
Dynamic Operating
Current – 20, 25, 35
VCC = Max., f = Max., Mil.
–
—
130
100
mA
mA
Outputs Open
Comm'l
Standby Power Supply
CE ≥ VIH,
Current (TTL Input Levels) VCC = Max.,
f = Max., Outputs Open
—
—
35
15
mA
mA
ISB1
Standby Power Supply
Current
CE ≥ VHC,
VCC = Max.,
(CMOS Input Levels)
f = 0, Outputs Open,
VIN ≤ VLC or VIN ≥ VHC
43
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-12
-15
-20
-25
-35
Symbol
Parameter
Unit
Min Max Min Max Min Max Min Max Min Max
tRC
tAA
Read Cycle Time
12
15
20
25
35
ns
ns
Address Access
Timens
12
12
15
15
20
20
25
25
35
35
tAC
tOH
tLZ
Chip Enable
Access Time
ns
ns
ns
ns
ns
ns
ns
Output Hold from
Address Change
2
2
2
2
3
3
3
3
3
3
Chip Enable to
Output in Low Z
tHZ
Chip Disable to
Output in High Z
6
7
9
10
15
tRCS
tRCH
tPU
tPD
Read Command
Setup Time
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Read Command
Hold Time
Chip Enable to
Power Up Time
Chip Disable to
12
15
20
25
25
ns
Power Down Time
1
READ CYCLE NO. 1 (ADDRESS controlled)(5, 6)
(9)
t
RC
ADDRESS
t
AA
t
OH
PREVIOUS DATA VALID
DATA VALID
DATA OUT
READ CYCLE NO. 2 (CE controlled)(5, 7)
t
RC
CE
(8)
t
HZ
t
AC
(3)
t
LZ
DATA VALID
DATA OUT
SUPPLY
HIGH IMPEDANCE
t
t
t
PD
PU
I
I
CC
SB
V
CC
CURRENT
t
RCH
RCS
WE
Notes:
5. WE is HIGH for READ cycle.
6. CE, OE are LOW for READ cycle.
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
7. ADDRESS must be valid prior to, or coincident with, CE
transition LOW.
44
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-12
-15
-20
-25
-35
Symbol
Parameter
Unit
Min Max Min Max Min Max Min Max Min Max
tWC
tCW
Write Cycle Time
12
12
15
15
18
18
20
20
30
25
ns
ns
Chip Enable Time
to End of Write
tAW
tAS
Address Valid to
End of Write
12
0
15
0
18
0
20
0
25
0
ns
ns
Address Set-up
Time
tWP
tAH
Write Pulse Width
12
0
15
0
18
0
20
0
25
0
ns
ns
Address Hold
Time
tDW
Data Valid to
End of Write
7
0
8
0
10
0
10
0
15
0
ns
tDH
tWZ
Data Hold Time
ns
ns
Write Enable to
4
5
7
7
13
Output in High Z†
tOW
Output Active to
End of Write
0
0
0
0
0
ns
ns
ns
tAWE
tADV
Write Enable to
Data-out Valid£
12
12
15
15
20
20
25
25
30
30
Data-in Valid to
Data-out Valid
† P4C1682 only.
£ P4C1681 only.
WRITE CYCLE NO. 1 (WE controlled)(10)
(12)
t
WC
ADDRESS
CE
t
CW
t
t
t
AW
WR
AH
t
WP
WE
t
t
t
AS
DW
DATA VALID
DH
DATA IN
(8,11)
OW
(8)
WZ
t
t
DATA OUT
P4C1682
DATA UNDEFINED
(8) HIGH IMPEDANCE
t
ADV
t
AWE
DATA OUT
P4C1681
DATA VALID
Notes:
12.Write Cycle Time is measured from the last valid address to the
first transitioning address.
10.CE and WE must be LOW for WRITE cycle.
11.If CE goes HIGH simultaneously with WE HIGH, the output
remains in a high impedance state.
45
P4C1681, P4C1682
TEMPERATURE RANGE SUFFIX
PACKAGE SUFFIX
Temperature
Description
Range Suffix
Package
Description
Suffix
C
Commercial Temperature Range,
–0°C to +70°C.
P
J
Plastic DIP, 300 mil wide standard
Plastic SOJ
M
Military Temperature Range,
–55°C to +125°C.
Mil. Temp. with MIL-STD-883C
Class D compliance
D
S
L
CERDIP, 300 mil wide standard
Small Outline IC
LCC Package
MB
ORDERING INFORMATION
P4C 1681
P4C 1682
l
—
ss
p
t
Temperature Range
Package Code
Speed (Access/Cycle Time)
Low Power Designator
Blank = None; L = Low Power
Device Number
Static RAM Prefix
l
= Ultra-low standby power designator L, if available.
ss = Speed (access/cycle time in ns), e.g., 25, 35
p = Package code, i.e., P, D, S, L.
t
= Temperature range, i.e., C, M, MB.
SELECTION GUIDE
The P4C1681 and P4C1682 are available in the following temperature, speed and package options.
Temperature
Range
Speed (ns)
Package
12
15
20
25
35
Plastic DIP
SOIC
SOJ
-12PC
-12SC
-12JC
-15PC
-15SC
-15JC
-25PC
-25SC
-25JC
N/A
N/A
N/A
-20PC
-20SC
-20JC
Commercial
-20LM
-20DM
N/A
N/A
-25LM
-25DM
-35LM
-35DM
N/A
N/A
Military Temp.
(P4C1682 Only)
LCC
CERDIP
Military
Processed*
(P4C1682 Only)
LCC
CERDIP
N/A
N/A
N/A
N/A
-25LMB -35LMB
-25DMB -35DMB
-20LMB
-20DMB
* Military temperature range with MIL-STD-883 Revision D, Class B processing.
N/A = Not available
46
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