OLI249 [ETC]
Radiation Tolerant Phototransistor Optocoupler For Hybrid Assembly; 耐辐射光电晶体管光耦合器的混合动力组件
| 型号： | OLI249 |
| 厂家： | 
ETC |
| 描述： | Radiation Tolerant Phototransistor Optocoupler For Hybrid Assembly |
| 文件： | 总3页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OLI 249
Radiation Tolerant Phototransistor
Optocoupler For Hybrid Assembly
ISO
LINK
.100"±.01"
6
5
4
Minimum Bonding pad size
.005"X .010", 6 places
6
5
4
CATHODE
BASE
EMITTER
Device color
code*
1
2
3
.110"±.01"
ANODE
COLLECTOR
1
3
Color Code - BLACK
SCHEMATIC
PACKAGE OUTLINE
Description
Features
The OLI 249 is designed especially for hybrid
application requiring optical isolation with high current
transfer ratio and low saturation Vce. Each OLI 249
consists of a light emitting diode and a NPN silicon
phototransistor mounted and coupled in a miniature
custom ceramic package. The very low input current
makes the OLI 249 well suited for direct CMOS to
LSTTL / TTL interfaces. Electrical parameters are
similar to the JEDEC registered 4N49 optocoupler
but with much better CTR degradation characteristics
due to radiation exposure.
♦ Current transfer ratio guaranteed over
-55°C to +100°C ambient temp. range
♦ 1500 Vdc electrical isolation
♦ Small foot print for hybrid device
♦ More Radiation tolerant than 4N49 4
♦ High current transfer ratio at low input
current - 200% at IF =2mA over
temperature
♦ High reliability and rugged construction
Device mounting is achieved by standard
hybrid assembly with non-conductive epoxies. Gold
or aluminum wire bonding can be used to make
electrical connections for maximum placement
flexibility .
♦ CTR comparable to darlington output
but with low saturation VCE = 0.15v typ.
♦ Similar to 4N4X type optocouplers
♦ Custom package available
Call Factory 4
Special electrical parametric selections are
available on request.
NOTES:
1. Measured between pins 1 and 6 shorted together and pins 2,3,4,and 5 shorted together. TA = 25°C and duration = 1 second.
2. Derate linearly at 3.0 mW / °C above 25 °C
3. Value applies for Pw ≤ 1 µS, PRR ≤ 300 pps.
4. Contact factory for more information
Absolute Maximum Ratings
Coupled
Input to Output Isolation Voltage1
Storage Temperature Range
Operation Temperature Range
Mounting Temperature Range ( 3 minutes max. )
± 1500 Vdc
-65°C to +150°C
-55°C to +125°C
240°C
Input Diode
Average Input Current
Peak Forward Current (≤ 1mS duration )
Reverse Voltage
40 mA
60 mA
3.0 V
Power Dissipation
70 mW
Output Detector
Collector - Emitter Voltage
Emitter - Collector Voltage
Collector - Base Voltage
Power Dissipation
40 V
7 V
45 V
200 mW3
ELECTRICAL CHARACTERISTIC ( TA = 25 °C, Unless Otherwise Specified )
Parameter
Symbol Min
Max
12
Units
Test Conditions
Fig. Note
2,3
mA
mA
mA
I F = 1 mA, VCE = 5.0V
I F = 2 mA, VCE = 5.0V, TA = -55°C
I F = 2 mA, VCE = 5.0V, TA = 100°C
On-State Collector Current
2.0
2.8
2.0
IC (ON)
µA
I F = 10 mA, VCB = 5.0V
I F = 2mA, IC =2.0mA
On-State Coll.-Base Current
Saturation Voltage
30
ICB(ON)
V
0.3
VCE(SAT)
Breakdown Voltage
Collector to Emitter
Collector to Base
V
V
V
I CE = 1 mA
I CB = 100 µA
I EB = 100 µA
40
45
7
BVCEO
BVCBO
BVEBO
Emitter to Base
Off-State Leakage Current
Collector to Emitter
nA
µA
nA
VCE = 20V
VCE = 20V, TA =100 °C
VCB = 20V
100
100
10
ICE(OFF)
ICB(OFF)
VF
Collector to Base
V
V
V
I F = 10mA, TA = -55°C
I F = 10mA
I F = 10mA, TA = 100°C
1
1
1
Input Forward Voltage
2.2
1.8
1.6
1.8
1.4
1.2
µA
Ω
V R = 2.0V
Input Reverse Current
100
IR
1
1
10 11
V I-O = ±1000Vdc
V I-O = 0V, f = 1 MHz
Input to Output Resistance
Input to Output Capacitance
r I - O
c I - O
pF
5
µS
µS
VCC = 10V, RL = 100 Ω
I F = 5mA
4
Rise Time
Fall Time
25
25
t r
t f
TYPICAL PERFORMANCE CURVES
100
9
8
7
NORMALIZED TO:
I F = 1 mA
VCE = 5V
125 °C
-55 °C
25 °C
TA = 25 °C
10
6
5
4
3
1
2
1
.1
0.9
0
1.1
1.3
1.5
1.7
1.9
2.1
0
1
2
3
4
5
6
7
8
9
10
V
F
- FORWARD VOLTAGE ( V )
I F = FORWARD CURRENT ( mA )
Fig. 2 -Normalized Ic vs. I
Fig. 1 -Diode Forward Characteristics
1.8
F
NORMALIZED TO:
CE = 5V
A = 25 °C
1.6
1.4
V
T
1.2
1.0
0.8
I
F = 1 mA
0.6
0.4
0.2
-75 -50 -25
0
25 50
75 100 125 150
AMBIENT TEMPERATURE (°C)
Fig. 3 -Normalized CTR vs. Temperature
INPUT
V
CC
I
F
Pulse Width = 100µS
Duty Cycle = 1%
I
F
0
90 %
V
OUT
10 %
0
V
OUT
t
r
t f
100Ω
RL
Fig. 4 - Switching Test Circuit
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