NLAS4717/D [ETC]
Low Voltage Dual SPDT Analog Switch ; 低电压双路SPDT模拟开关\n
| 型号： | NLAS4717/D |
| 厂家： | 
ETC |
| 描述： | Low Voltage Dual SPDT Analog Switch
|
| 文件： | 总10页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NLAS4717
Product Preview
Low Voltage
Dual SPDT Analog Switch
The NLAS4717 is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring two
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Low R of 4.5 W at 2.7 V.
The part also features guaranteed Break Before Make switching,
assuring the switches never short the driver.
ON
MARKING
DIAGRAM
The NLAS4717 is available in a 2.0 x 1.5 mm bumped die array,
with a 4 x 3 arrangement of solder bumps. The pitch of the solder
bumps is 0.5 mm for easy handling.
XX
D
A1
Microbump−10
CASE 489AA
Features
A1
XX = Device Code
D = Date Code
• Low R , t4.5 W at 2.7 V
• Threshold Adjusted to Function with 1.8 V Control at
Supply = 2.7−3.3 V
ON
• Single Supply Operation from 1.8−5.5 V
• Tiny 2.0 x 1.5 mm Bumped Die
• Low Crosstalk, t−80 dB at 10 mHz
PIN CONNECTIONS
AND LOGIC DIAGRAM
(Top View)
GND
• Full 0−V Signal Handling Capability
CC
B
1
• High Isolation, −55 dB at 10 mHz
• Low Standby Current, t50 nA
• Low Distortion, t0.03% THD
NC2
IN2
NC1
IN1
C
A
1
1
• R Flatness of 1.2
W
ON
C
C
C
A
2
A
3
A
4
2
3
4
• Pin for Pin Replacement for MAX4717
COM2
NO2
COM1
NO1
Applications
• Cell Phone
• Speaker Switching
• Power Switching (Up to 100 mA)
• Modems
B
4
V+
• Automotive
FUNCTION TABLE
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
IN 1, 2
NO 1, 2
NC 1, 2
0
1
OFF
ON
ON
OFF
ORDERING INFORMATION
Device
Package
Shipping
NLAS4717
Microbump−10 3000/Tape & Reel
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
July, 2003 − Rev. P0
NLAS4717/D
NLAS4717
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V+
Positive DC Supply Voltage
Analog Input Voltage (V , V , or V
*0.5 to )7.0
V
IS
V
IN
) (Note 1)
*0.5 v V v V )0.5
V
NO NC
COM
IS
CC
Digital Select Input Voltage
DC Current, Into or Out of Any Pin
*0.5 v V v)7.0
V
I
I
IK
$50
mA
1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum
current rating.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.8
Max
5.5
Unit
V
V+
DC Supply Voltage
V
V
Digital Select Input Voltage
GND
GND
*55
5.5
V
IN
IS
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time, SELECT
V
CC
V
T
A
)125
°C
ns/V
t , t
r
V
CC
V
CC
= 3.3 V $ 0.3 V
= 5.0 V $ 0.5 V
0
0
100
20
f
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
*555C to 255C t855C t1255C
Symbol
Parameter
Condition
V
CC
$10%
Unit
V
IH
Minimum High−Level Input
Voltage, Select Inputs
2.0
2.5
3.0
5.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
V
V
IL
Maximum Low−Level Input
Voltage, Select Inputs
2.0
2.5
3.0
5.0
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
V
I
Maximum Input Leakage
Current, Select Inputs
V
V
= 5.5 V or GND
= 5.5 V or GND
5.5
$ 100
$ 100
$ 120
nA
IN
IN
I
I
Power Off Leakage Current
0
$10
$10
$10
m
A
OFF
IN
Maximum Quiescent Supply
Current
Select and V = V or GND
5.5
$ 50
$ 200
$ 200
nA
CC
IS
CC
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2
NLAS4717
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Maximum Limit
−555C to 255C
t855C
t1255C
Min Max
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
$10%
Unit
R
“ON” Resistance
(Note 2)
V
V
w V
2.5
3.0
5.0
5.5
4.5
3.0
2.0
6.0
5.0
3.5
2.0
6.5
5.5
4.0
2.0
W
ON
IN
IH
(NC, NO)
= GND to V
IS
CC
I
IN
I v 100 mA
R
On−Resistance
Flatness (Notes 2, 4)
I
= 100 mA
2.5
3.0
5.0
1.2
1.2
1.2
1.5
1.5
1.5
1.8
1.8
1.8
W
W
FLAT
COM
(NC, NO)
V
= 0 to V
0.35
IS
CC
∆R
On−Resistance Match
Between Channels
(Notes 2 and 3)
V
= 1.3 V;
= 100 mA
= 1.5 V;
2.5
3.0
5.0
0.18
0.5
0.18
0.6
0.18
0.7
ON
IS
I
COM
V
IS
I
= 100 mA
0.4
COM
0.5
0.6
V
= 2.8 V;
IS
I
= 100 mA
0.3
0.5
0.4
1.0
0.5
10
COM
I
I
NC or NO Off
Leakage Current
(Figure 10)
V
= V or V
IH
5.5
5.5
−0.5
−1.0
−1.0
−2.0
−10
nA
nA
NC(OFF)
IN
IL
V
V
or V = 1.0
NC
NO(OFF)
NO
= 4.5 V
COM
I
COM ON
V
= V or V
IH
1.0
2.0
−3.0
3
COM(ON)
IN
IL
Leakage Current
(Figure 10)
V
NO
V
NC
1.0 V or 4.5 V with
floating or
V
NC
V
NO
1.0 V or 4.5 V with
floating
V
COM
= 1.0 V or 4.5 V
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3. ∆R − R between all switches.
R
ON = ON(MAX)
ON(MIN)
4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog
signal ranges.
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3
NLAS4717
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)
r
f
Guaranteed Maximum Limit
*555C to 255C
t855C
t1255C
V
IS
(V) Min Typ* Max Min Max Min Max
Symbol
Parameter
Test Conditions
R = 50 WC = 35 pF
V+ $10% (V)
Unit
t
t
t
Turn−On Time
,
L
2.5
3.0
5.0
1.3
1.5
2.8
100
80
55
120
100
100
65
140
120
120
70
ns
ON
L
(Figures 2 and 3)
80
30
55
35
65
35
70
Turn−Off Time
R = 50 WC, = 35 pF
L
2.5
3.0
5.0
1.3
1.5
2.8
60
40
40
70
50
50
80
60
60
ns
ns
OFF
BBM
L
(Figures 2 and 3)
25
30
30
Minimum Break−
V
IS
= 3.0
Before−Make Time
3.0
1.5
1.0
8.0
R = 300 WC
,
= 35 pF
L
L
(Figure 1)
V+ = 3.0 V
C
NC
C
NO
C
NC
C
NO
Off
Off
On
On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
9
9
pF
15
15
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) (Note 6)
V+
Typical
255C
300
V
Symbol
Parameter
Condition
Unit
BW
Maximum On−Channel −3dB
Bandwidth or Minimum Frequency
Response
V
V
= 0 dBm
NC/NO
3.0
MHz
IN
centered between V and GND
IN
CC
(Figure 4)
V
V
Maximum Feedthrough On Loss
V
V
= 0 dBm @ 100 kHz to 50 MHz
ONL
IN
centered between V and GND (Figure 4)
3.0
3.0
−0.05
−55
dB
IN
CC
Off−Channel Isolation
f = 10 mHz; V = 1 V RMS; C = 5 nF
ISO
IS
L
V
IN
centered between V and GND (Figure 4)
dB
pC
CC
Q
Charge Injection Select Input to
Common I/O
V
V
L
GND, R = 0 W, C = 1 nF
3.0
5.0
5.0
10
IN = CC to
IS
L
Q = C − D V
(Figure 5)
OUT
THD
VCT
Total Harmonic Distortion
THD + Noise
F
V
= 20 Hz to 20 kHz, R = Rgen = 600 W, C = 50 pF
= 1 V RMS
3.0
0.03
%
IS
IS
L
L
Channel−to−Channel Crosstalk
f = 10 mHz; V = 1 V RMS, C = 5 pF, R = 50
V
W
3.0
−80
dB
IS
L
L
centered between V and GND (Figure 4)
IN
CC
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
6. −40°C specifications are guaranteed by design.
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4
NLAS4717
V
CC
DUT
Input
V
Output
50
CC
GND
V
OUT
0.1 m F
t
BMM
W
35 pF
90%
90% of V
OH
Output
Switch Select Pin
GND
Figure 1. tBBM (Time Break−Before−Make)
V
CC
Input
50%
50%
90%
DUT
0 V
V
CC
Output
50
V
OUT
V
0.1 m F
OH
Open
90%
W
35 pF
Output
V
OL
Input
t
t
OFF
ON
Figure 2. tON/tOFF
V
CC
V
CC
Input
50%
50%
DUT
0 V
50
W
Output
V
OUT
V
OH
Open
35 pF
Output
V
10%
10%
OL
Input
t
t
ON
OFF
Figure 3. tON/tOFF
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5
NLAS4717
50
W
DUT
Reference
Input
50 W Generator
Transmitted
Output
50
W
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.
ISO
ONL
V
V
OUT
IN
= Off Channel Isolation = 20 Log ǒ Ǔ for V
V
V
at 100 kHz
IN
ISO
V
OUT
= On Channel Loss = 20 Log ǒ Ǔ for V
at 100 kHz to 50 MHz
ONL
IN
V
IN
Bandwidth (BW) = the frequency 3 dB below V
= Use V setup and test to all other switch analog input/outputs terminated with 50
ONL
V
CT
W
ISO
Figure 4. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
V
CC
V
IN
Output
Open
GND
C
L
Output
Off
D V
OUT
Off
On
V
IN
Figure 5. Charge Injection: (Q)
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6
NLAS4717
10
1
1.6
1.4
1.2
1
Threshold Rising
Threshold Falling
0.8
0.6
0.4
0.2
0
0.1
0.01
1,NC1
1, NO1
1
10
100
1000
10000
100000
0
2
4
Supply Voltage (V)
6
FREQUENCY (Hz)
Figure 6. Total Harmonic Distortion Plus Noise
versus Frequency
Figure 7. Voltage in Threshold on Logic Pins
70
60
50
40
30
20
10
0
200
0
1, NO1
T−on 2.5V
T−off 2.5 V
T−on 3.0 V
−200
−400
−600
−800
1,NC1
T−off 3.0 V
T−off 5 V
T−on 5 V
Q (pC),
V
CC
= 5 V
0
2
4
6
−55
−30
−5
20
45
70
95
120
V
in
(V)
TEMPERATURE (°C)
Figure 8. Charge Injection versus Vis
Figure 9. T−on/T−off Time versus Temperature
1000
V+ = 2.75 V
100
10
1
Comm / Closed Switch
0.1
Open Switch
0.01
0.001
−55
−5
45
95
TEMPERATURE (°C)
Figure 10. NO/NC Current Leakage Off and On,
VCC = 5 V
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7
NLAS4717
1.3
1.1
0.9
0.7
0.5
0.3
0.1
1000
100
10
T = +25°C
A
I
= 100 mA
COM
+85°C
5.5 V
+25°C
1
−40°C
0.1
0.01
0.001
−55
−5
45
95
0.0
1.0
2.0
3.0
4.0
5.0
TEMPERATURE (°C)
V
COM
(V)
Figure 11. ICC Current Leakage versus
Temperature VCC = 5.5 V
Figure 12. NC/NO On−Resistance versus
COM Voltage
9.0
8.0
7.0
6 0
5.0
4.0
3.0
2.0
1.0
0
1.8 V
T = +25°C
A
I
= 100 mA
COM
2.0 V
2.3 V
2.7 V
2.5 V
3.0 V
5.0 V
4.0
0.0
1.0
2.0
3.0
(V)
5.0
V
COM
Figure 13. NC/NO On−Resistance versus
COM Voltage
−40
−50
−60
−70
0
Bandwidth (On − Loss)
−1
Off−Isolation
−80
−90
10
0
Phase Shift
(Degrees)
−100
−110
−120
−10
Crosstalk
V
= 3.0 V
V
= 3.0 V
CC
CC
−130
−140
T = 25°C
T = 25°C
A
A
−10
0.001
0.01
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 14. NC/NO Bandwidth and Phase Shift
versus Frequency
Figure 15. NC/NO Off Isolation and Crosstalk
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8
NLAS4717
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
80
60
40
20
0
+85°C
+25°C
−40°C
T−on
T−off
V
= 5 V
CC
I
= 100 mA
COM
1.8
2.8
3.8
(V)
4.8
0.0
1.0
2.0
3.0
4.0
5.0
V
CC
V
COM
(V)
Figure 16. T−on/T−off versus VCC
Figure 17. NC/NO On−Resistance
versus COM Voltage
0.9
+25°C
+85°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
−40°C
V
= 3 V
= 100 mA
CC
I
COM
0.0
1.0
2.0
3.0
V
COM
(V)
Figure 18. NC/NO On−Resistance
versus COM Voltage
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9
NLAS4717
PACKAGE DIMENSIONS
Microbump−10
CASE 489AA−01
ISSUE O
4 X
D
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
0.10
C
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
E
MILLIMETERS
DIM MIN
−−−
MAX
0.650
0.270
0.380
PIN ONE
CORNER
A
A1 0.210
A2 0.280
A1
D
E
1.965 BSC
1.465 BSC
0.250 0.350
0.500 BSC
0.10
C
b
A2
A
e
D1
E1
1.500 BSC
1.000 BSC
0.075 C
SEATING
PLANE
C
D1
e
C
B
10 X
b
E1
0.15
C
C
A B
A
0.05
1
2
3
4
e
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800−282−9855 Toll Free USA/Canada
NLAS4717/D
相关型号：
NLAS4717EPMR2G
DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO10, 3 X 5 MM, LEAD FREE, MICRO-10
ONSEMI
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