ND231N [ETC]

SCR / Diode Modules ; SCR /二极管模块\n
ND231N
型号: ND231N
厂家: ETC    ETC
描述:

SCR / Diode Modules
SCR /二极管模块\n

二极管
文件: 总9页 (文件大小:219K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
Rectifier Diode Module  
ND231N  
ND231N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
PeriodischeSpitzensperrspannungT = -40°C... T  
2000  
2400  
2200 V  
2600 V  
VRRM  
vj  
vj max  
repetitive peak reverse voltages  
2100  
2500  
2300 V  
2700 V  
Stoßspitzensperrspannung  
Tvj = +25°C... Tvj max  
VRSM  
non-repetitive peak reverse voltage  
410 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
IFRMSM  
IFAVM  
IFSM  
231 A  
261 A  
Dauergrenzstrom  
average on-state current  
TC = 100°C  
TC = 91°C  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
7.500 A  
6.400 A  
Stoßstrom-Grenzwert  
surge current  
281.000 A²s  
205.000 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
1,55 V  
0,8 V  
max.  
Tvj = Tvj max , iF = 800 A  
Tvj = Tvj max  
vF  
on-state voltage  
Schleusenspannung  
threshold voltage  
V(TO)  
rT  
0,84 m  
25 mA  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
Isolations-Prüfspannung  
RMS, f = 50 Hz, t = 1 sec  
RMS, f = 50 Hz, t = 1 min  
VISOL  
kV  
kV  
3,6  
3,0  
insulation test voltage  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per Module, Θ = 180° sin RthJC  
pro Modul / per Module, DC  
max.  
max.  
0,170 °C/W  
0,164 °C/W  
pro Modul / per Module  
max.  
0,04 °C/W  
Übergangs-Wärmewiderstand  
RthCH  
Tvj max  
Tc op  
Tstg  
thermal resistance, case to heatsink  
150  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
°C  
Betriebstemperatur  
operating temperature  
- 40...+150 °C  
- 40...+150 °C  
Lagertemperatur  
storage temperature  
C. Drilling  
date of publication: 30.04.03  
revision:  
prepared by:  
1
approved by: M. Leifeld  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
1/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
Rectifier Diode Module  
ND231N  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see annex  
Seite 3  
page 3  
Si-Element mit Druckkontakt  
Si-pellet with pressure contact  
Innere Isolation  
AlN  
5
internal insulation  
Anzugsdrehmoment für mechanische Anschlüsse  
mounting torque  
Toleranz ±15%  
M1  
M2  
G
Nm  
Anzugsdrehmoment für elektrische Anschlüsse  
terminal connection torque  
Toleranz ±10%  
12 Nm  
700  
Gewicht  
weight  
typ.  
g
Kriechstrecke  
24 mm  
50 m/s²  
creepage distance  
Schwingfestigkeit  
vibration resistance  
f = 50 Hz  
file-No.  
E 83336  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
2/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
ND231N  
Rectifier Diode Module  
2
3
ND  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
3/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
ND231N  
Rectifier Diode Module  
Analytische Elemente des transienten Wärmewiderstandes Z thJC für DC  
Analytical elements of transient thermal impedance Z thJC for DC  
Pos. n  
1
2
3
4
5
6
7
Rthn [°C/W]  
0,0039  
0,0008  
0,0097  
0,008  
0,0291  
0,085  
0,0552  
0,54  
0,0661  
2,85  
τn [s]  
nmax  
n
ZthJC  
1 - e– t  
R  
n=1  
Analytische Funktion / Analytical function:  
thn  
Θ=  
rec 60°  
rec120°  
rec180°  
sin180°  
DC  
0,20  
0,16  
0,12  
0,08  
0,04  
0,00  
0,001  
0,01  
0,1  
1
10  
100  
t [s]  
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)  
Parameter: Stromflußwinkel Θ / Current conduction angle Θ  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
4/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
Rectifier Diode Module  
ND231N  
R,Tau_Glieder des Kühlers  
Natürliche Kühlung / Natural cooling  
3 Module pro Kühler / 3 modules per heatsink  
Kühler / Heatsink type: KM17 (60W)  
Analytische Elemente des transienten Wärmewiderstandes Z thCA  
Analytical elements of transient thermal impedance Z thCA  
Pos. n  
1
2
3
4
5
6
7
Rthn [°C/W]  
0,0205  
2,04  
0,07905  
36,4  
1,535  
1340  
τn [s]  
Verstärkte Kühlung / Forced cooling  
3 Module pro Kühler / 3 modules per heatsink  
Kühler / Heatsink type: KM17 (Papst 4650)  
Analytische Elemente des transienten Wärmewiderstandes Z thCA  
Analytical elements of transient thermal impedance Z thCA  
Pos. n  
1
2
3
4
5
6
7
Rthn [°C/W]  
0,015  
4,11  
0,08  
40,4  
0,475  
458  
τn [s]  
nmax  
n
ZthCA  
1 - e – t  
R  
n=1  
Analytische Funktion / Analytical function:  
thn  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
5/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
ND231N  
Rectifier Diode Module  
500  
DC  
180 ° rec  
400  
300  
200  
100  
180 ° sin  
120 ° rec  
Θ= 60 ° rec  
0
0
100  
200  
300  
400  
IFAV [A]  
Durchlassverlustleistung je Zweig / On-state power loss per arm PFAV = f(IFAV  
)
Parameter: Stromflußwinkel / Current conduction angle Θ  
160  
140  
120  
100  
80  
60  
180 ° sin  
40  
Θ= 60 ° rec  
180 ° rec  
120 ° rec  
DC  
20  
0
100  
200  
300  
400  
IFAVM [A]  
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(IFAVM  
)
Strombelastung je Zweig / Current load per arm  
Berechungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen)  
Calculation base PTAV (switching losses should be considered separately)  
Parameter: Stromflußwinkel Θ / Current conduction angle Θ  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
6/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
ND231N  
Rectifier Diode Module  
1600  
ID  
B2  
R thCA [°C/W]  
0,04  
0,03  
0,02  
+
0,05  
0,06  
1400  
1200  
1000  
800  
~
R-Last  
0,08  
-
0,10  
0,12  
L-Last  
0,15  
0,20  
600  
400  
0,30  
0,40  
0,40  
200  
0,40  
0
0
20  
40  
60  
A [°C]  
80  
100  
120  
140  
0
100  
200  
300  
ID [A]  
400  
500  
600  
T
Höchstzulässiger Ausgangsstrom / Maximum rated output current ID  
B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit  
Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot  
Parameter:  
Wärmewiderstand zwischen den Gehäusen und Umgebung / Thermal resistance cases to ambient RthCA  
2000  
1500  
1000  
500  
ID  
B6  
R thCA [°C/W]  
3~  
0,03  
0,02  
0,04  
+
0,05  
0,06  
-
0,08  
0,10  
0,12  
0,15  
0,20  
0,30  
0,40  
0,40  
0,40  
0
0
100  
200  
300  
400  
D [A]  
500  
600  
700  
0
20  
40  
60  
80  
100  
120  
140  
T A [°C]  
I
Höchstzulässiger Ausgangsstrom / Maximum rated output current ID  
B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit  
Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot  
Parameter:  
Wärmewiderstand zwischen den Gehäusen und Umgebung / Thermal resistance cases to ambient RthCA  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
7/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
Rectifier Diode Module  
ND231N  
10000  
iFM = 1000A  
500A  
200A  
100A  
50A  
20A  
1000  
100  
1
10  
100  
-di/dt [A/µs]  
Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)  
Tvj = Tvjmax, vR 0,5 VRRM, vRM = 0,8 VRRM  
Parameter: Durchlaßstrom / On-state current iFM  
a
5.000  
4.000  
3.000  
2.000  
1.000  
0
TA = 35 °C  
b
TA = 45 °C  
0,01  
0,1  
1
t [s]  
Grenzstrom je Zweig / Maximum overload on-state current per arm IF(OV)M = f(t), vRM = 0,8 VRRM  
a: Leerlauf / No-load conditions  
b: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor) = IFAVM  
Ta = 35°C, verstärkte Luftkühlung / Forced air cooling Kühlkörper / Heatsink type: KM17 (Papst 4650)  
Ta = 45°C, natürliche Luftkühlung / Natural air cooling Kühlkörper / Heatsink type: KM17 (60W)  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
8/9  
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
ND231N  
Rectifier Diode Module  
2.500  
2.000  
1.500  
1.000  
500  
I FAV (vor)  
0 A  
25 A  
40 A  
48 A  
55 A  
60 A  
=
0
0,01  
0,1  
1
10  
100  
1000  
10000  
t [s]  
Überstrom je Zweig / Overload on-state current IF(OV)  
B6- Sechspuls-Brückenschaltung, 120° Rechteck / Six-pulse bridge circuit, 120° rectangular  
Kühlkörper / Heatsink type KM17 (60W) Natürliche Kühlung bei / Natural cooling at TA = 45°C  
Parameter: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor)  
3.000  
2.500  
2.000  
1.500  
1.000  
500  
I FAV (vor)  
0 A  
=
50 A  
85 A  
110 A  
125 A  
135 A  
0
0,01  
0,1  
1
10  
t [s]  
100  
1000  
10000  
Überstrom je Zweig / Overload on-state current IF(OV)  
B6- Sechspuls-Brückenschaltung, 120° Rechteck / Six-pulse bridge circuit 120° rectangular  
Kühlkörper / Heatsink type KM17 (Papst 4650) Verstärkte Kühlung bei / Forced cooling at TA = 35°C  
Parameter: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor)  
BIP AC / 91-08-29, Spec  
A12/91  
Seite/page  
9/9  

相关型号:

ND231N20K

Rectifier Diode, 1 Phase, 1 Element, 261A, 2000V V(RRM), Silicon,
INFINEON

ND231N22K

Rectifier Diode, 1 Phase, 1 Element, 261A, 2200V V(RRM), Silicon,
INFINEON

ND231N24K

Rectifier Diode, 1 Phase, 1 Element, 261A, 2400V V(RRM), Silicon,
INFINEON

ND231N26K

Rectifier Diode, 1 Phase, 1 Element, 261A, 2600V V(RRM), Silicon,
INFINEON

ND2406B

TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 570MA I(D) | TO-205AD
ETC

ND2406L

TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 230MA I(D) | TO-92
ETC

ND2406L-1-18

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY

ND2406L-18

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY

ND2406L-2

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY

ND2406L-2-18

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY

ND2406L-2TA

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY

ND2406L-2TR1

Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY