ND231N22K [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 261A, 2200V V(RRM), Silicon,;型号: | ND231N22K |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 261A, 2200V V(RRM), Silicon, |
文件: | 总10页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datenblatt / Data sheet
N
Netz-Dioden-Modul
Rectifier Diode Module
ND231N
ND231N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
PeriodischeSpitzensperrspannungT = -40°C... T
2000
2400
2200 V
2600 V
VRRM
vj
vj max
repetitive peak reverse voltages
2100
2500
2300 V
2700 V
Stoßspitzensperrspannung
Tvj = +25°C... Tvj max
VRSM
non-repetitive peak reverse voltage
410 A
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
IFRMSM
IFAVM
IFSM
231 A
261 A
Dauergrenzstrom
average on-state current
TC = 100°C
TC = 91°C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
7.500 A
6.400 A
Stoßstrom-Grenzwert
surge current
281.000 A²s
205.000 A²s
Grenzlastintegral
I²t-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
1,55 V
0,8 V
max.
Tvj = Tvj max , iF = 800 A
Tvj = Tvj max
vF
on-state voltage
Schleusenspannung
threshold voltage
V(TO)
rT
0,84 mΩ
25 mA
Ersatzwiderstand
slope resistance
Tvj = Tvj max
max.
Sperrstrom
reverse current
Tvj = Tvj max , vR = VRRM
iR
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
VISOL
kV
kV
3,6
3,0
insulation test voltage
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin RthJC
pro Modul / per Module, DC
max.
max.
0,170 °C/W
0,164 °C/W
pro Modul / per Module
max.
0,04 °C/W
Übergangs-Wärmewiderstand
RthCH
Tvj max
Tc op
Tstg
thermal resistance, case to heatsink
150
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
°C
Betriebstemperatur
operating temperature
- 40...+150 °C
- 40...+150 °C
Lagertemperatur
storage temperature
C. Drilling
date of publication: 30.04.03
revision:
prepared by:
1
approved by: M. Leifeld
BIP AC / 91-08-29, Spec
A12/91
Seite/page
1/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
Rectifier Diode Module
ND231N
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 3
page 3
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Innere Isolation
AlN
5
internal insulation
Anzugsdrehmoment für mechanische Anschlüsse
mounting torque
Toleranz ±15%
M1
M2
G
Nm
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Toleranz ±10%
12 Nm
700
Gewicht
weight
typ.
g
Kriechstrecke
24 mm
50 m/s²
creepage distance
Schwingfestigkeit
vibration resistance
f = 50 Hz
file-No.
E 83336
BIP AC / 91-08-29, Spec
A12/91
Seite/page
2/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
ND231N
Rectifier Diode Module
2
3
ND
BIP AC / 91-08-29, Spec
A12/91
Seite/page
3/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
ND231N
Rectifier Diode Module
Analytische Elemente des transienten Wärmewiderstandes Z thJC für DC
Analytical elements of transient thermal impedance Z thJC for DC
Pos. n
1
2
3
4
5
6
7
Rthn [°C/W]
0,0039
0,0008
0,0097
0,008
0,0291
0,085
0,0552
0,54
0,0661
2,85
τn [s]
nmax
ꢀ
ꢀ
n
ZthJC
1 - e– t
ꢀ R
n=1
Analytische Funktion / Analytical function:
thn
Θ=
rec 60°
rec120°
rec180°
sin180°
DC
0,20
0,16
0,12
0,08
0,04
0,00
0,001
0,01
0,1
1
10
100
t [s]
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
BIP AC / 91-08-29, Spec
A12/91
Seite/page
4/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
Rectifier Diode Module
ND231N
R,Tau_Glieder des Kühlers
Natürliche Kühlung / Natural cooling
3 Module pro Kühler / 3 modules per heatsink
Kühler / Heatsink type: KM17 (60W)
Analytische Elemente des transienten Wärmewiderstandes Z thCA
Analytical elements of transient thermal impedance Z thCA
Pos. n
1
2
3
4
5
6
7
Rthn [°C/W]
0,0205
2,04
0,07905
36,4
1,535
1340
τn [s]
Verstärkte Kühlung / Forced cooling
3 Module pro Kühler / 3 modules per heatsink
Kühler / Heatsink type: KM17 (Papst 4650)
Analytische Elemente des transienten Wärmewiderstandes Z thCA
Analytical elements of transient thermal impedance Z thCA
Pos. n
1
2
3
4
5
6
7
Rthn [°C/W]
0,015
4,11
0,08
40,4
0,475
458
τn [s]
nmax
ꢀ
n
ꢀ
ZthCA
1 - e – t
ꢀR
n=1
Analytische Funktion / Analytical function:
thn
BIP AC / 91-08-29, Spec
A12/91
Seite/page
5/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
ND231N
Rectifier Diode Module
500
DC
180 ° rec
400
300
200
100
180 ° sin
120 ° rec
Θ= 60 ° rec
0
0
100
200
300
400
IFAV [A]
Durchlassverlustleistung je Zweig / On-state power loss per arm PFAV = f(IFAV
)
Parameter: Stromflußwinkel / Current conduction angle Θ
160
140
120
100
80
60
180 ° sin
40
Θ= 60 ° rec
180 ° rec
120 ° rec
DC
20
0
100
200
300
400
IFAVM [A]
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(IFAVM
)
Strombelastung je Zweig / Current load per arm
Berechungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen)
Calculation base PTAV (switching losses should be considered separately)
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
BIP AC / 91-08-29, Spec
A12/91
Seite/page
6/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
ND231N
Rectifier Diode Module
1600
ID
B2
R thCA [°C/W]
0,04
0,03
0,02
+
0,05
0,06
1400
1200
1000
800
~
R-Last
0,08
-
0,10
0,12
L-Last
0,15
0,20
600
400
0,30
0,40
0,40
200
0,40
0
0
20
40
60
A [°C]
80
100
120
140
0
100
200
300
ID [A]
400
500
600
T
Höchstzulässiger Ausgangsstrom / Maximum rated output current ID
B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit
Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot
Parameter:
Wärmewiderstand zwischen den Gehäusen und Umgebung / Thermal resistance cases to ambient RthCA
2000
1500
1000
500
ID
B6
R thCA [°C/W]
3~
0,03
0,02
0,04
+
0,05
0,06
-
0,08
0,10
0,12
0,15
0,20
0,30
0,40
0,40
0,40
0
0
100
200
300
400
D [A]
500
600
700
0
20
40
60
80
100
120
140
T A [°C]
I
Höchstzulässiger Ausgangsstrom / Maximum rated output current ID
B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit
Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot
Parameter:
Wärmewiderstand zwischen den Gehäusen und Umgebung / Thermal resistance cases to ambient RthCA
BIP AC / 91-08-29, Spec
A12/91
Seite/page
7/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
Rectifier Diode Module
ND231N
10000
iFM = 1000A
500A
200A
100A
50A
20A
1000
100
1
10
100
-di/dt [A/µs]
Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)
Tvj = Tvjmax, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM
Parameter: Durchlaßstrom / On-state current iFM
a
5.000
4.000
3.000
2.000
1.000
0
TA = 35 °C
b
TA = 45 °C
0,01
0,1
1
t [s]
Grenzstrom je Zweig / Maximum overload on-state current per arm IF(OV)M = f(t), vRM = 0,8 VRRM
a: Leerlauf / No-load conditions
b: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor) = IFAVM
Ta = 35°C, verstärkte Luftkühlung / Forced air cooling Kühlkörper / Heatsink type: KM17 (Papst 4650)
Ta = 45°C, natürliche Luftkühlung / Natural air cooling Kühlkörper / Heatsink type: KM17 (60W)
BIP AC / 91-08-29, Spec
A12/91
Seite/page
8/9
Datenblatt / Data sheet
N
Netz-Dioden-Modul
ND231N
Rectifier Diode Module
2.500
2.000
1.500
1.000
500
I FAV (vor)
0 A
25 A
40 A
48 A
55 A
60 A
=
0
0,01
0,1
1
10
100
1000
10000
t [s]
Überstrom je Zweig / Overload on-state current IF(OV)
B6- Sechspuls-Brückenschaltung, 120° Rechteck / Six-pulse bridge circuit, 120° rectangular
Kühlkörper / Heatsink type KM17 (60W) Natürliche Kühlung bei / Natural cooling at TA = 45°C
Parameter: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor)
3.000
2.500
2.000
1.500
1.000
500
I FAV (vor)
0 A
=
50 A
85 A
110 A
125 A
135 A
0
0,01
0,1
1
10
t [s]
100
1000
10000
Überstrom je Zweig / Overload on-state current IF(OV)
B6- Sechspuls-Brückenschaltung, 120° Rechteck / Six-pulse bridge circuit 120° rectangular
Kühlkörper / Heatsink type KM17 (Papst 4650) Verstärkte Kühlung bei / Forced cooling at TA = 35°C
Parameter: Vorlaststrom je Zweig / Pre-load current per arm IFAV(vor)
BIP AC / 91-08-29, Spec
A12/91
Seite/page
9/9
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