LDT3251AT [ETC]
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID ; 晶体管| BJT | PNP | 40V V（ BR ） CEO | 200MA I（C ） | LID\n
| 型号： | LDT3251AT |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | LID
|
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT DATA
Micro International, Inc
PART NUMBER
LDT3251A and LDT3251AT
Micro-LID PNP Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDT3251A and LDT3251AT
Description:
The LDT3251A (untinned) and LDT3251AT (tinned) are PNP silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT3251A and LDT3251AT meet the
general specifications of the 2N3251A transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT3251A and LDT3251AT can be provided
with special feature options such as additional temperature cycling and
screening.
Maximum Ratings:
Parameter
Symbol
Vcbo
Vceo
Vebo
Ic
Rating
50 V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40 V
5 V
200 mA
350 mW
150°C
Total Dissipation
Pt
Operating Junction Temperature
Storage Temperature
Operating Temperature
Tj
Tstg
Toper
-65°C to 150°C
-55°C to 125°C
1/3 January 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDT3251A and LDT3251AT
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3, 4
3
4
2
1
2
.040
1
.075
END VIEW
SIDE VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075¢¢ + .003¢¢
.040¢¢ + .003¢¢
.035¢¢ + .003¢¢
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015¢¢ x .010¢¢ typ
.015¢¢ x .010¢¢ typ
.015¢¢ x .012¢¢ typ
Marking on back of package : Brown Stripe over Collector, Black Dot over
(post down configuration) (post down configuration)
Emitter and Red Dot in Center
Standard In-Process Screening Requirements:
Ø
Ø
Ø
Ø
Ø
Ø
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°C
10 temperature cycles from –55°C to 125°C
100% electrical test of dc characteristics at 25°C
Final visual inspection
________________________________________________________________
2/3 January 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDT3251A and LDT3251AT
Electrical Characteristics (25°C Ambient)
Parameter
Symbol
Min Typ Max Units
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
BVcbo
50
40
5
--
--
--
--
--
V
V
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
BVceo
BVebo
Icbo
--
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
--
V
Collector-Base Cutoff Current
Vcb = 40 V
--
100
300
.25
.9
nA
DC Forward Current Gain*
Ic = 10 mA, Vce = 1 V
Hfe
100
Collector-Emitter Saturation
Ic = 10 mA, Ib = 15 mA
Vce (sat)
Vbe (sat)
Cobo
--
--
--
--
--
--
V
V
Base-Emitter Saturation
Ic = 10 mA, Ib = 15 mA
Collector Capacitance
Vcb = 10 V, Ie = 0
f = 1 MHz
4.5
pF
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 January 1997
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