IRFBL18N50K [ETC]


型号：	IRFBL18N50K
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 18A I(D) \| TO-263AB 晶体管\| MOSFET \| N沟道\| 500V V（ BR ） DSS \| 18A I（ D） \| TO- 263AB\n 晶体晶体管
文件：	总3页 (文件大小：32K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD- 93928

PROVISIONAL

IRFBL18N50K

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l Telecom and Data-Com off-Line SMPS

V_DSS

R_DS(on)

I_D

l UninterruptIble Power Supply

Benefits

l Low On-Resistance

500V

0.25Ω

18A

l High Speed Switching

l Low Gate Drive Current Due to Improved

Gate Charge Characteristics

l Improved Avalanche Ruggedness and

Dynamic dv/dt, Fully Characterized

Avalanche Voltage and Current

Super D²pak^TM

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.6

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

260

°C

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.5

––– 540 –––

––– 5.0 –––

T_J= 25°C, I_S= 18A, V_GS= 0V

T_J= 125°C, I_F= 18A

Q_rr

t_on

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Typical SMPS Topologies

Hard Switching Full and Half Bridge Circuits

Hard Switching Single Transistor Circuits

Power Factor Correction Circuits

www.irf.com

6/2/00

IRFB18N50K

PROVISIONAL

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

500 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.25

3.5 ––– 5.5

Ω

V_GS= 10V, I_D= 11A

V_DS= V_GS, I_D= 250µA

––– ––– 50

––– ––– 250

––– ––– 100

––– ––– -100

µA

V_DS= 500V, V_GS= 0V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA V_DS= 400V, V_GS= 0V, T_J= 125°C

_GS= 30V

V_GS= -30V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

g_fs

7.5 ––– –––

V_DS= 50V, I_D= 11A

I_D= 18A

Q_g

––– ––– 110

––– ––– 40

––– ––– 50

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 400V

V_GS= 10V,

V_DD= 250V

–––

20 –––

55 –––

45 –––

I_D= 18A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 4.3Ω

V_GS= 10V,

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 3000 –––

––– 300 –––

Output Capacitance

Reverse Transfer Capacitance

V_DS= 25V

–––

20 –––

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

–––

Max.

430

Units

I_AR

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

R_θJC

Parameter

Junction-to-Case

Typ.

–––

Max.

0.63

Units

°C/W

R_θJA

Junction-to-Ambient (PCB Mounted, steady-state)

–––

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 400µs; duty cycle ≤ 2%.

max. junction temperature.

Starting T_J= 25°C, L = 5.0mH, R_G= 25Ω,

I_AS= 18A,

I_SD≤ 18A, di/dt ≤ TBDA/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

www.irf.com

IRFB18N50K

PROVISIONAL

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

MIN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IMENSIONING

TOLERANCING PER ANSI Y14.5M, 1982.

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD MEASUREMENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIMENSION : INCH

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IR F1010

W ITH ASSEMBLY

INTERNATIONAL

RECTIFIER

LOGO

PART NU MBER

LOT C ODE 9B1M

IR F1010

9246

D ATE COD E

(YYW W )

ASSEMBLY

LOT

CO DE

YEAR

= W EEK

W W

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 6/00

www.irf.com

IRFBL18N50K [ETC]

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