IRFBL3703 [INFINEON]
Synchronous Rectification in High Power High Frequency DC/DC Converters; 在大功率高频DC / DC转换器的同步整流
| 型号： | IRFBL3703 |
| 厂家： | 
Infineon |
| 描述： | Synchronous Rectification in High Power High Frequency DC/DC Converters |
| 文件： | 总8页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93841
SMPS MOSFET
IRFBL3703
HEXFET® Power MOSFET
Applications
VDSS
30V
RDS(on) max
ID
260A
l Synchronous Rectification in High
0.0025Ω
Power High Frequency DC/DC Converters
Benefits
l >1mm lower profile than D2Pak
l Same footprint as D2Pak
l Low Gate Impedance to Reduce Switching
Losses
l Ultra Low On-Resistance
l Fully Avalanche Rated
Super-D2PakTM
Absolute Maximum Ratings
Parameter
Max.
260
180
1000
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
Power Dissipation
300
W
Power Dissipation
3.8
Linear Derating Factor
2.0
W/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
TJ, TSTG
-55 to + 175
Typical SMPS Topologies
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Notes through are on page 8
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1
4/5/00
IRFBL3703
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
0.028 ––– V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
–––
2.0
––– –––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
2.0
2.5
2.5
3.6
VGS = 10V, ID = 76A
VGS = 7.0V, ID = 76A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
mΩ
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 4.0
V
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 24V, ID = 76A
ID = 76A
gfs
150 ––– –––
––– 209 –––
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
62 –––
42 –––
18 –––
nC VDS = 24V
VGS = 10V,
VDD = 15V, VGS = 10V
ID = 76A
––– 123 –––
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
53 –––
24 –––
RG = 1.8Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 8250 –––
––– 3000 –––
––– 290 –––
––– 10360 –––
––– 3060 –––
––– 2590 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
1700
76
Units
mJ
EAS
IAR
–––
–––
–––
A
EAR
Repetitive Avalanche Energy
30
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.5
Units
RθJC
RθJA
Junction-to-Ambient
–––
40
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
––– –––
––– –––
260
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
1000
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.8 1.3
––– 80 120
––– 185 275
V
TJ = 25°C, IS = 76A, VGS = 0V
ns
TJ = 25°C, IF = 76A, VDS = 16V
Qrr
nC di/dt = 100A/µs
2
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IRFBL3703
10000
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 175 C
J
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
10000
1000
100
260A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
= 10V
GS
10
4.0
5.0
V
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFBL3703
20
16
12
8
14000
I
D
= 76A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
iss
rss
oss
V
= 24V
C
= C + C
DS
gs
gd
gd ,
C
C
= C
= C + C
12000
10000
8000
6000
4000
2000
0
ds
gd
C
C
iss
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
40
80
120 160 200 240 280 320
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
10000
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
1
°
= 25 C
T
C
10ms
°
T
= 175 C
J
V
= 0 V
Single Pulse
GS
2.0
10
0.1
0.0
1
10
100
0.4
0.8
1.2
1.6
2.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFBL3703
RD
300
250
200
150
100
50
VDS
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFBL3703
6000
5000
4000
3000
2000
1000
0
1 5V
I
D
TOP
31A
54A
DRIVER
L
BOTTOM 76A
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
°
Starting T , Junction Temperature ( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFBL3703
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFET
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7
IRFBL3703
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
MINIMUM RECOMMENDED FOOT PRINT
9.05 [.356]
4.0 [.157]
3.0 [.119]
9.02 [.355]
8.65 [.341]
10.9 [.429]
9.9 [.390]
0.9 [.035]
0.7 [.028]
3
9.2 [.362]
9.0 [.355]
9.68 [.381]
3
15.2 [.598]
14.2 [.560]
13.0 [.511]
12.0 [.473]
15.70 [.618]
2
1
2.37 [.093]
1
2
1.2 [.047]
0.9 [.035]
2X 1.61 [.063]
2X 2.55 [.100]
2X
2X
0.7 [.028]
0.8 [.032]
0.25 [.010] B A
1.8 [.070]
1.0 [.040]
4
2.54 [.100]
0.15 [.006]
3 SURFACES
NOTES:
LEAD ASSIGNMENTS
MOS F E T SCHOTTKY / FRED
ANODE 1
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONT ROLLING DIMENS ION: MIL LIMETE R.
1
2
3
=
=
=
GATE
1
2
3
=
SOURCE
DRAIN
=
=
ANODE 2
COMMON CATHODE
4
DIMENSION IS MEASURED AT FULL LEAD WIDTH.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.6mH
RG = 25Ω, IAS = 76A.
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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