HVM121WK [ETC]
;
| 型号： | HVM121WK |
| 厂家： | 
ETC |
| 描述： | 二极管 测试 光电二极管 |
| 文件： | 总3页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADE-208-042C(Z)
HVM121WK
Silicon Epitaxial Planar PIN Diode
for High Frequency Attenuator
Preliminary
Rev. 3
Jun. 1993
Features
Pin Arrangement
• Low capacitance. (C= 0.7pF max)
• MPAK package is suitable for high density
surface mounting and high speed assembly.
3
1
2
(Top View)
Ordering Information
1 Anode
2 Anode
3 Cathode
Type No.
Laser Mark
Package Code
HVM121WK
H 4
MPAK
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
100
Unit
V
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
* Per one device
V
R
I
50
mA
mW
°C
F
P *
100
d
T
125
j
T
-55 to +125
°C
stg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
1.1
Unit
V
Test Condition
I = 50 mA
Forward voltage
Reverse current
Capacitance
V
—
—
F
F
I
—
100
nA
V
= 30 V
R
R
R
C
r
—
—
—
0.7
—
pF
V
= 50 V, f = 1 MHz
1.0
kΩ
I = 10 µA, f = 100 MHz
F
f1
Forward resistance
r
—
—
10
Ω
I = 10 mA, f = 100 MHz
F
f2
HVM121WK
10-6
10-7
10-8
10-4
10-6
10-9
10-8
10-10
10-11
10-12
10-13
-10
10
10-12
0.6
0.8
0
40
60
80
100
0
0.2
0.4
1.0
20
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
104
103
102
f=1MHz
f=100MHz
10
1.0
10
-1
10
1.0
10
102
-2
10
-4
10-5
10
10-3
1.0
Reverse voltage VR (V)
Forward current IF (A)
Fig.3 Capacitance Vs.
Reverse voltage
Fig.4 Forward resistance
Vs. Forward current
HVM121WK
Unit: mm
Package Dimensions
+ 0.10
– 0.06
+ 0.10
– 0.05
0.4
0.16
Laser Mark
3
0 – 0.10
H 4
2
1
0.95
1 Anode
2 Anode
3 Cathode
0.95
1.9
+ 0.3
– 0.1
2.8
HITACHI Code MPAK(1)
JEDEC Code
EIAJ Code
Weight (g)
—
SC-59A
0.011
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