HVM131SR [ETC]
;
| 型号： | HVM131SR |
| 厂家： | 
ETC |
| 描述： | 二极管 测试 光电二极管 |
| 文件： | 总3页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADE-208-380A(Z)
HVM131SR
Silicon Epitaxial Planar Pin Diode
for Antenna Switching
Rev. 1
Oct. 1995
Features
Outline
• Low capacitance.(C=0.8pF max)
3
• Low forward resistance. (r =1.0Ω max)
f
• MPAK package is suitable for high density
surface mounting and high speed assembly.
1
2
(Top View)
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2
Ordering Information
Type No.
Laser Mark
Package Code
HVM131SR
P6
MPAK
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VRM
Value
Unit
V
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
* Two device total
65
VR
60
V
I F
*
100
mA
mW
°C
P *
150
d
T
T
125
j
-55 to +125
°C
stg
Electrical Characteristics (Ta = 25°C) *
Item
Symbol
Min
—
Typ
—
Max
1.0
0.1
0.8
1.0
Unit
V
Test Condition
Forward voltage
Reverse current
Capacitance
V
I = 10 mA
F
F
I
—
—
µA
pF
Ω
V
V
= 60 V
R
R
C
—
—
= 1 V , f = 1 MHz
R
Forward resistance
* Per one device
r
—
—
I = 10 mA, f = 100 MHz
F
f
HVM131SR
10-2
10-4
10-6
10-8
10-6
10-7
10-8
10-9
10-10
10-10
10-11
10-12
-12
10
0
40
60
80
100
0.6
0.8
20
0
0.2
0.4
1.0
Reverse voltage VR (V)
Forward voltage VF (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
103
102
10
f=1MHz
f=100MHz
10
1.0
1.0
10-1
-1
10
10
102
-2
10
-4
10-5
10
10-3
1.0
Reverse voltage VR (V)
Forward current IF (A)
Fig.3 Capacitance Vs.
Reverse voltage
Fig.4 Forward resistance Vs.
Forward current
HVM131SR
Unit: mm
Package Dimensions
+ 0.10
– 0.06
+ 0.10
– 0.05
0.4
0.16
Laser Mark
3
0 – 0.10
P 6
2
1
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2
0.95
0.95
1.9
+ 0.3
– 0.1
2.8
HITACHI Code MPAK(1)
JEDEC Code
EIAJ Code
Weight (g)
—
SC-59A
0.011
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