select brandShort,logo,brand from pdf_brand where id=2 limit 1 HGTP7N60C3DS_技术文档

HGTP7N60C3DS [ETC]

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 14A I（C ） | TO- 263AB\n

HGTP7N60C3DS


型号：	HGTP7N60C3DS
厂家：	ETC
描述：	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 14A I(C) \| TO-263AB 晶体管\| IGBT \| N -CHAN \| 600V V（ BR ） CES \| 14A I（C ） \| TO- 263AB\n 晶体晶体管双极性晶体管栅
文件：	总9页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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HGTP7N60C3DS9A

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB

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HGTP7N60C3D_05

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FAIRCHILD

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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3PIN

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HGTP7N60C3S9A

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HGXO0A-E-SM3-32.0M,100/10/-/C

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