HGT1S2N120CNDS9A [ETC]

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 1.2KV V( BR ) CES | 13A I(C ) | TO- 263AB\n
HGT1S2N120CNDS9A
型号: HGT1S2N120CNDS9A
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB
晶体管| IGBT | N -CHAN | 1.2KV V( BR ) CES | 13A I(C ) | TO- 263AB\n

晶体 晶体管 电动机控制 瞄准线 双极性晶体管 栅
文件: 总10页 (文件大小:352K)
下载:  下载PDF数据表文档文件

HGT1S2N120CNS

13A, 1200V, NPT Series N-Channel IGBT

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20 FAIRCHILD

HGT1S2N120CNS

13A, 1200V, NPT Series N-Channel IGBT

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21 INTERSIL

HGT1S2N120CNS9A

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-263AB

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20 ETC

HGT1S2N120CNS9A

13A, 1200V, N-CHANNEL IGBT, TO-263AB

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0 RENESAS

HGT1S3N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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24 FAIRCHILD

HGT1S3N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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29 INTERSIL

HGT1S3N60A4DS9A

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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28 FAIRCHILD

HGT1S3N60A4DS9A_NL

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3

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0 FAIRCHILD

HGT1S3N60A4S

600V, SMPS Series N-Channel IGBT

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20 INTERSIL

HGT1S3N60A4S

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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0 FAIRCHILD

HGT1S3N60A4S9A

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-263AB

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18 ETC

HGT1S3N60A4S9A

Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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0 FAIRCHILD

HGT1S3N60B3DS

7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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13 INTERSIL

HGT1S3N60B3DS9A

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB

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10 ETC

HGT1S3N60B3S

7A, 600V, UFS Series N-Channel IGBTs

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12 INTERSIL