HCT7000 [ETC]
N- Channel En hance ment Mode MOS Transistor; N沟道恩昂斯换货模式的MOS晶体管
| 型号： | HCT7000 |
| 厂家： | 
ETC |
| 描述： | N- Channel En hance ment Mode MOS Transistor |
| 文件： | 总2页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Bulletin HCT7000M
January 1996
N-Channel Enhancement Mode MOS Transistor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Features
Absolute Maximum Ratings
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dissipation (TA = 25o C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C
Thermal Resistance RÆJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W
Thermal Resistance RÆJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W
· 200mA ID
· Ultra small surface mount package
· RDS(ON) < 5W
· Pin-out compatible with most SOT23
MOSFETS
Description
The HCT7000M is a high performance
enhancement mode N-channel MOS
transistor chip packaged in the ultra
small 3 pin ceramic LCC package.
Electrical characteristics are similar to
those of the JEDEC 2N7000. The pin-
out and footprint matches that of most
enhancement mode MOS transistors
built in SOT23 plastic packages.
Notes:
(1) TS = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
The HCT7000M is available processed
to TX and TXV levels per MIL-PRF-
19500. Order HCT7000MTX or
HCT7000MTXV. Typical screening and
lot acceptance tests are provided on
page 13-4. TX and TXV products
receive a VGS HTRB at 24 V for 48 hrs.
at 150o C and a VDS HTRB at 48 V for
260 hrs. at 150o C.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
15-36
Types HCT7000M, HCT7000MTX, HCT7000MTXV
o
Electrical Characteristics (T = 25 C unless otherwise noted)
A
SYMBOL
VDSS
PARAMETER
Drain-Source Voltage
MIN MAX UNITS
TEST CONDITION
VGS = 0 V, ID = 10 mA
60
.8
V
V
VGS(TH)
IGSS
Gate Threshold Voltage
Gate Leakage
3.0
±10
1
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = ±15 V
VGS = 0 V, VDS = 48 V
nA
mA
IDSS
Zero Gate Voltage Drain Current
On-State Drain Current
ID(ON)
75
mA VDS = 10 V, VGS = 4.5 V
W
RDS(ON) Drain-Source on-Resistance
5
VGS = 10 V, ID = 0.5 A
VDS(ON)
Gfs
Drain-Source on-Voltage
Forward Transconductance
Input Capacitance
2.5
V
VGS = 10 V, ID = 0.5 A
100
mS VDS = 10 V, ID = 0.2 A
Ciss
60
25
5
pF
pF
pF
ns
ns
VDS = 25 V, VGS = 0 V, f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
10
10
t(on)
VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25 W
t(off)
Turn-off Time
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-37
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