FLM7785-18F [ETC]
C-Band Internally Matched FET; C波段内部匹配型场效应管
| 型号： | FLM7785-18F |
| 厂家： | 
ETC |
| 描述： | C-Band Internally Matched FET |
| 文件： | 总4页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLM7785-18F
C-Band Internally Matched FET
FEATURES
• High Output Power: P
= 42.5dBm (Typ.)
1dB
• High Gain: G
= 7.0dB (Typ.)
1dB
= 29% (Typ.)
• High PAE: η
add
• Low IM = -45dBc@Po = 31.5dBm
3
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
83.3
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
8.1 12.75
A
DS
DS
DS
DSS
g
m
-
= 5V, I
= 5100mA
-
4350
mS
V
DS
Pinch-off Voltage
V
p
= 5V, I
DS
= -450µA
= 450mA
-1.0
-5
-2.0 -3.5
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
V
-
-
V
GSO
GS
P
1dB
41.5 42.5
-
-
dBm
dB
V
= 10V,
DS
G
6.0
7.0
1dB
I
= 0.55 I
DS
DSS (Typ.),
f = 7.7 ~ 8.5 GHz,
Z =Z = 50 ohm
I
-
-
-
4700 5800
mA
%
dsr
η
S
L
Power-added Efficiency
Gain Flatness
add
29
-
-
∆G
0.6
dB
f = 8.5 GHz, ∆f = 10 MHz
3rd Order Intermodulation
Distortion
2-Tone Test
IM
3
-42
-45
-
dBc
P
= 31.5dBm S.C.L.
out
Channel to Case
R
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
-
-
1.6
-
1.8
80
°C/W
°C
th
∆T
10V x I
x R
th
ch
dsr
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
FLM7785-18F
C-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM vs. INPUT POWER
3
V
=10V
DS
39
37
35
33
31
29
27
f = 8.5 GHz
100
1
f = 8.51 GHz
2
2-tone test
80
60
P
out
-15
-25
-35
-45
40
20
IM
3
22 24 26 28 30 32
0
50
100
150
200
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Case Temperature (°C)
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
V
=10V
DS
V
DS
=10V
f = 8.5 GHz
P
1dB
Pin=36dBm
34dBm
43
41
39
37
43
41
39
P
out
32dBm
30dBm
40
20
η
add
37
28dBm
29
31
33
35
7.7
8.1
8.5
Input Power (dBm)
Frequency (GHz)
2
FLM7785-18F
C-Band Internally Matched FET
S
S
S
S
+90°
11
22
21
12
+j50
+j100
+j25
8.6
7.9
8.1
8.5
8.7 GHz
7.5
8.4
7.7
+j250
+j10
0
7.7
7.5
8.3
8.2
8.1
8.0
7.9
8.3
7.5
0.1
7.7
7.9
8.1
8.3
0.2
25
50Ω
250
8.5
180°
0°
8.7 GHz
SCALE FOR |S
|
12
8.5
8.1
7.5
8.5
8.7 GHz
1
2
3
8.3
8.7 GHz
7.9
7.8
-j10
-j250
7.6
7.7
4
-j25
-j100
-j50
-90°
S-PARAMETERS
= 10V, I = 4800mA
V
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7500
7600
7700
7800
7900
8000
8100
8200
8300
8400
8500
8600
8700
.449
.416
.382
.353
.337
.337
.356
.389
.426
.466
.501
.526
.546
-50.2
-63.9
-81.0
-102.3
-126.5
-151.2
-177.4
157.9
137.0
117.2
99.4
2.408
2.448
2.503
2.565
2.629
2.669
2.694
2.689
2.654
2.580
2.488
2.386
2.302
150.2
138.5
125.5
111.1
96.2
81.6
65.5
49.2
33.5
17.1
0.9
.077
.079
.082
.084
.085
.086
.087
.087
.086
.084
.083
.081
.079
106.1
95.1
82.3
68.2
53.7
39.7
24.5
9.0
.445
.430
.411
.387
.359
.334
.302
.268
.236
.203
.171
.143
.118
44.2
33.6
21.5
8.0
-5.7
-18.8
-32.6
-46.0
-58.2
-70.4
-81.2
-89.7
-95.7
-5.4
-20.6
-35.6
-49.4
-61.3
84.1
71.6
-13.7
-26.7
3
FLM7785-18F
C-Band Internally Matched FET
Case Style "IK"
Metal-Ceramic Hermetic Package
0.1
(0.004)
1
2
3
4-R 1.3 0.15
(0.051)
2.4 0.15
(0.094)
0.6
(0.024)
5.5 Max.
(0.217)
14.9
(0.587)
1. Gate
2. Source (Flange)
3. Drain
20.4 0.3
(0.803)
Unit: mm(inches)
24 0.5
(0.945)
For further information please contact:
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
相关型号：
FLM8596-4C
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU
©2020 ICPDF网 联系我们和版权申明