FLM7785-45F [EUDYNA]
C-Band Internally Matched FET; C波段内部匹配型场效应管
| 型号： | FLM7785-45F |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | C-Band Internally Matched FET |
| 文件： | 总5页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLM7785-45F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=32.5%(Typ.)
・Broad Band: 7.7~8.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
O
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
V
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VGS
PT
-5
115
W
-65 to +175
175
OC
OC
Tstg
Tch
O
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25 C)
Item
Symbol
VDS
Unit
Condition
Limit
≤10
DC Input Voltage
Forward Gate Current
Reverse Gate Current
V
mA
mA
RG=10Ω
RG=10Ω
IGF
≤52
IGR
≥-23.2
O
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C)
Limit
Typ.
24
16
-1.5
-
Test Conditions
Item
Symbol
Unit
Max.
-
-
-3.0
-
-
Min.
VDS=5V, VGS=0V
-
A
S
IDSS
gm
Vp
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
-
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
-0.5
-5.0
46.0
V
V
VGSO
P1dB
Output Power at 1dB G.C.P.
46.5
7.0
dBm
dB
VDS=10V
G1dB
Idsr
Power Gain at 1dB G.C.P.
Drain Current
6.0
-
f=7.7 - 8.5 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50Ω
-
-
-
-
-
11ꢀ
13
-
A
Power-added Efficiency
Gain Flatness
ηadd
∆G
32.5
%
dB
-
1.1
-
1.6
1.3
100
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
OC/W
Channel to Case
Rth
∆Tch
OC
10V x Ids(DC) x Rth
G.C.P.:Gain Compression Point
ESD
Class III
2000Vꢀ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
1
FLM7785-45F
C-Band Internally Matched FET
Output Power & P.A.E vs. Input Power
VDS=10V, IDS(DC)=8.0A, f=8.1GHz
Power Derating Curve
50
48
46
44
42
40
38
36
140
120
100
80
140
120
100
80
60
40
20
0
Pout
60
40
20
P.A.E
0
0
50
100
150
200
28
30
32
34
36
38
40
42
Case Temperature (OC)
Input Power (dBm)
IMD vs Output Power
VDS=10V, IDS(DC)=8.0A
f1=8.50GHz,
Output Power vs. Frequency
VDS=10V,IDS(DC)=8A
f2=8.51GHz
48
46
44
42
40
38
36
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
Pin=40dBm
P1dB
Pin=38dBm
IM3
Pin=34dBm
IM5
Pin=30dBm
26
28
30
32
34
36
38
40
7.5
7.7
7.9
8.1
8.3
8.5
8.7
Output Power (dBm)
S.C.L : Single Carrier Level
Frequency (GHz)
2
FLM7785-45F
C-Band Internally Matched FET
■S-PARAMETER
+90°
+50j
+100j
+25j
8.5GHz
+250j
+10j
0
8.5GHz
8.1GHz
Scale for |S21|
7.7GHz
7.7GHz
8.1GHz
6
5
2
±180°
∞
0°
8.5GHz
8.5GHz
8.1GHz
8.1GHz
7.7GHz
7.7GHz
-250j
-10j
25
10
Ω
-25j
-100j
0.3
-90°
S11
S22
S12
S21
-50j
VDS=10V, IDS(DC)=8.0A
S21
Freq
S11
S12
S22
[GHz]
7.5
7.6
7.7
7.8
7.9
8.0
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
MAG
0.59
ANG
MAG
2.42
ANG
MAG
0.05
ANG
MAG
0.55
ANG
-83.48
-92.42
-115.60
-132.70
-150.94
-175.21
166.47
145.07
122.80
104.80
87.15
37.25
87.74
0.54
0.49
0.44
0.36
0.31
0.26
0.21
0.19
0.18
0.17
0.16
0.15
0.12
2.50
2.53
2.55
2.58
2.59
2.57
2.56
2.55
2.55
2.54
2.55
2.55
2.53
18.21
3.25
0.05
0.06
0.06
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
55.84
31.40
6.43
0.50
0.47
0.44
0.42
0.42
0.41
0.41
0.41
0.40
0.39
0.38
0.36
0.32
-102.39
-118.61
-136.88
-161.09
-178.81
161.62
143.05
129.89
118.61
106.72
96.08
-12.24
-34.31
-51.85
-73.91
-99.42
-121.60
-143.52
-168.78
169.26
149.06
119.25
-27.13
-52.27
-80.04
-110.35
-134.88
-159.01
171.71
145.16
121.06
88.15
66.26
47.84
30.74
87.58
77.86
8.33
3
FLM7785-45F
C-Band Internally Matched FET
■Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM7785-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
・Do not put these products into the mouth.
FAX: (408) 428-9111
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
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