CMT0760FP [ETC]
POWER FIELD EFFECT TRANSISTOR; 功率场效应晶体管
| 型号： | CMT0760FP |
| 厂家： | 
ETC |
| 描述： | POWER FIELD EFFECT TRANSISTOR |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT07N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ꢀ
scheme to provide enhanced voltage-blocking capability ꢀ
without degrading performance over time. In addition, this ꢀ
advanced MOSFET is designed to withstand high energy in
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
ꢀ
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
efficient design also offers a drain-to-source diode with a ꢀ
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Front View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
ID
Value
7.0
Unit
Drain to Current － Continuous
A
－ Pulsed
IDM
20
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
VGS
VGSM
PD
±20
±40
V
V
W
TO-220
TO-220FP
147
50
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
TJ, TSTG
EAS
-55 to 150
245
℃
mJ
θJC
θJA
TL
1.0
62.5
260
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
℃
(1) VDD = 50V, ID = 10A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1
CMT07N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT07N60
Package
TO-220
CMT07N60FP
TO-220 Full Pak
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT07N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
Typ
Max
Units
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
IDSS
μA
100
100
100
IGSSF
IGSSR
nA
nA
V
100
4.0
1.2
VGS(th)
2.0
4.0
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
Forward Transconductance (VDS = 40 V, ID = 3.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Ω
mhos
pF
pF
1380
115
23
30
80
125
85
38
6.4
15
4.5
1800
150
30
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
pF
70
ns
ns
ns
ns
(VDD = 300 V, ID = 7.0 A,
170
260
180
50
V
GS = 10 V,
RG = 9.1Ω) *
nC
nC
nC
(VDS = 480 V, ID = 7.0 A,
Qgs
Qgd
LD
V
GS = 10 V)*
nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
LS
7.5
nH
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS =7.0 A,
VSD
ton
trr
1.4
V
ns
ns
Forward Turn-On Time
dIS/dt = 100A/µs)
**
415
Reverse Recovery Time
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2
CMT07N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 3
CMT07N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 4
CMT07N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 5
CMT07N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
A
D
c1
φ
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
A1
c
e
b1
b
e1
Side View
Front View
TO-220FP
I
B
C
J
A
B
C
D
E
G
H
I
K
J
K
M
N
O
P
Q
R
b
b
b1
b2
e
N
M
b2
b1
e
R
Side View
Front View
Back View
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 6
CMT07N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
TEL: +886-2-8692 1591
FAX: +886-2-8692 1596
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 7
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