CMT08N50GN220 [CHAMP]
POWER FIELD EFFECT TRANSISTOR; 功率场效应晶体管
| 型号： | CMT08N50GN220 |
| 厂家： | 
CHAMPION MICROELECTRONIC CORP. |
| 描述： | POWER FIELD EFFECT TRANSISTOR |
| 文件： | 总7页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT08N50
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Symbol
ID
Value
Unit
8.0
24
A
IDM
Gate-to-Source Voltage － Continue
－ Non-repetitive
VGS
±30
±40
V
V
VGSM
PD(Max)
Total Power Dissipation
W
TO-220
83
30
TO-220FP
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
TJ, TSTG
EAS
-55 to 150
320
mJ
(VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
℃/W
θJC
θJA
TL
1.0
62.5
260
℃
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 1
CMT08N50
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT08N50GN220*
Package
TO-220
CMT08N50GN220FP*
CMT08N50XN220*
TO-220 Full Package
TO-220
CMT08N50XN220FP*
*Note : G : Suffix for PB Free Product
TO-220 Full Package
X : Suffix for Halogen Free and PB Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT08N50
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
Typ
Max
Units
V(BR)DSS
500
V
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
IDSS
μA
1
3
(VDS = 400 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
IGSSF
IGSSR
100
nA
nA
V
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
100
4.0
Gate Threshold Voltage
VGS(th)
2.0
4.9
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 8.0 A)
RDS(on)
VDS(on)
0.7
7.2
Ω
5.0
V
Forward Transconductance (VDS = 50 V, ID = 4.0A) *
gFS
Ciss
Coss
Crss
td(on)
tr
mmhos
pF
pF
Input Capacitance
1450
190
45.4
15
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
pF
Reverse Transfer Capacitance
Turn-On Delay Time
ns
ns
ns
ns
Rise Time
33
(RGo + C17n = 9.1Ω) *
Turn-Off Delay Time
td(off)
tf
40
Fall Time
32
Total Gate Charge
(VDS = 400 V, ID = 8.0 A,
Gate-Source Charge
VGS = 10 V)*
Qg
40
nC
nC
nC
Qgs
Qgd
LD
8.0
17
Gate-Drain Charge
Internal Drain Inductance
4.5
nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
LS
7.5
nH
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS = 8.0 A, VGS = 0 V,
Forward Turn-On Time
dIS/dt = 100A/μs)
VSD
ton
trr
1.5
V
35
75
ns
ns
Reverse Recovery Time
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 2
CMT08N50
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 3
CMT08N50
POWER FIELD EFFECT TRANSISTOR
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 4
CMT08N50
POWER FIELD EFFECT TRANSISTOR
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 5
CMT08N50
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
TO-220FP
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 6
CMT08N50
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan, R.O.C.
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
TEL: +886-2-2696 3558
FAX: +886-2-2696 3559
2009/07/28 Rev. 1.2
Champion Microelectronic Corporation
Page 7
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