CEP8030LA [ETC]
30V N Channel MOS ; 30V N沟道MOS\n
| 型号： | CEP8030LA |
| 厂家： | 
ETC |
| 描述： | 30V N Channel MOS
|
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP8030LA/CEB8030LA
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4
FEATURES
D
Ω
Ω
30V , 75A , RDS(ON)=6.5m
DS(ON)=9.0m
@VGS=10V.
@VGS=4.5V.
R
Super high dense cell design for extremely low RDS(ON)
High power and current handling capability.
TO-220 & TO-263 package.
.
G
S
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Limit
Unit
V
Parameter
Symbol
Drain-Source Voltage
30
V
DS
V
GS
20
75
Ć
V
Gate-Source Voltage
I
D
A
Drain Current-Continuous
-Pulsed
I
DM
A
225
Drain-Source Diode Forward Current
I
S
A
75
75
W
Maximum Power Dissipation
@Tc=25 C
PD
Derate above 25 C
0.5
W/ C
Operating and Storage Temperautre Range
T
J
, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C/W
C/W
R
įJC
2.0
62.5
RįJA
4-122
CEP8030LA/CEB8030LA
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
4
Typ Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS = 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
30
V
BVDSS
µA
nA
I
DSS
GSS
V
DS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
Ć
VGS
=
20V, VDS = 0V
I
100
Ć
ON CHARACTERISTICSa
VGS(th)
1
3
V
Gate Threshold Voltage
VDS = VGS, I
D
= 250µA
5.5
7.5
6.5
mΩ
mΩ
V
V
V
V
GS = 10V, I
D
= 37.5A
R
DS(ON)
Drain-Source On-State Resistance
GS = 4.5V, I = 30A
D
9
75
GS = 10V, VDS = 10V
On-State Drain Current
I
D(ON)
A
S
gFS
40
Forward Transconductance
DS = 10V, I = 26A
D
DYNAMIC CHARACTERISTICSb
2447
983
Input Capacitance
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
187
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
25
21
Turn-On Delay Time
t
D(ON)
50
45
ns
ns
V
DD = 15V,
Rise Time
t
r
I
D
=60A,
R
GEN = 6 Ω
Turn-Off Delay Time
Fall Time
t
D(OFF)
58
13
100
33
ns
ns
V
GS =10V
t
f
nC
Q
g
35
11
16
45
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =15V, I =40A
D
Q
gs
gd
nC
nC
V
GS=5V
Q
4-123
CEP8030LA/CEB8030LA
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
4
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
V
V
SD
V
GS = 0V, Is =37.5A
1.3
Notes
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
48
120
VGS=10,9,8,7,6,5,4V
105
90
75
36
25 C
60
VGS=3V
24
45
30
TJ=125 C
-55 C
12
0
15
VGS=2V
0
1
1.5
2
2.5
3
3.5
4
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
3600
ID=40A
VGS=10V
3000
2400
1800
Ciss
1.6
1.3
1200
600
0
1.0
Coss
Crss
0.7
0.4
-100
0
5
10
15
20
25
30
-50
0
50
100
200
150
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
4-124
CEP8030LA/CEB8030LA
1.15
1.30
1.20
ID=250ijA
V
DS=VGS
1.10
I
D
=250ijA
4
1.10
1.00
0.90
1.05
1.00
0.95
0.90
0.85
0.80
0.70
0.60
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
50
100
80
10
60
40
20
1
V
DS=10V
0
0.1
20
0
40
60
80
0.4
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
DS=15V
8
6
t
2
1
0
i
100ijs
m
I
D=40A
Li
10
10
10
N)
O
1ms
10ms
100ms
RDS(
DC
4
TC=25 C
Tj=175 C
Single Pulse
2
0
-1
10
2
0
1
-1
10
10
10
10
0
20
40
60
80
VDS, Drain-Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
4-125
CEP8030LA/CEB8030LA
4
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
0
10
D=0.5
0.2
DM
P
-1
0.1
10
10
1
t
0.05
2
t
0.02
0.01
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
-2
4
-2
0
1
2
-1
3
10
10
10
10
10
10
10
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-126
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