BULB128D-BT4 [ETC]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ; 高压快速开关NPN功率晶体管\n
| 型号： | BULB128D-BT4 |
| 厂家： | 
ETC |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
| 文件： | 总7页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULB128D-BT4
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code
Marking
Shipment
BULB128D-BT4
BULB128DB
Tape & Reel
■
STMicroelectronics PREFERRED
SALESTYPE
■
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
3
1
■
■
VERY HIGH SWITCHING SPEED
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
D2PAK
(TO-263)
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Value
700
Unit
V
V
V
VCEO
400
VEBO
Emitter-Base Voltage
V(BR)EBO
(IC = 0, IB = 2 A, tp < 10µs, Tj < 150oC)
Collector Current
IC
ICM
IB
4
A
A
Collector Peak Current (tp < 5 ms)
Base Current
8
2
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
4
70
A
o
Total Dissipation at Tc = 25 C
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/7
September 2003
BULB128D-BT4
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0 V)
100
500
µA
µA
o
VCE = 700 V
TC = 125 C
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
250
µA
V(BR)EBO Emitter-Base
Breakdown Voltage
IE = 10 mA
9
18
V
(IC = 0)
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
400
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IC = 4 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.7
1
1.5
V
V
V
V
0.5
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
1.1
1.2
1.3
V
V
V
hFE
Vf
DC Current Gain
IC = 10 mA
IC = 2 A
VCE = 5 V
VCE = 5 V
10
12
32
Forward Voltage Drop If = 2 A
2.5
V
INDUCTIVE LOAD
Storage Time
Fall Time
VCC = 200 V
IC = 2 A
VBE(off) = -5 V
L = 200 µH
ts
tf
IB1 = 0.4 A
RBB = 0 Ω
(see fig.1)
0.6
0.1
µs
µs
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 250 V
IB1 = 0.4 A
Tp = 300 µs
IC = 2 A
IB2 = -0.4 A
(see fig.2)
ts
tf
2
2.9
µs
µs
0.2
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
BULB128D-BT4
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULB128D-BT4
Inductive Fall Time
Inductive Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULB128D-BT4
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULB128D-BT4
TO-263 (D2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
TYP.
MAX.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
B2
C
C2
D
D1
E
8.00
8.50
0.315
0.334
10.00
10.40
0.393
0.409
E1
G
4.88
15.00
1.27
1.40
2.40
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.624
0.055
0.068
0.126
L
L2
L3
M
1.75
3.2
R
0.40
0.016
V2
0o
8o
0o
8o
- Weight : 1.38 g (typ.)
- The planaty of the slug must be within 30 µm
P011P6/G
6/7
BULB128D-BT4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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7/7
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