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BULB39D-1 [STMICROELECTRONICS]

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
BULB39D-1
型号： BULB39D-1
厂家： ST    ST
描述：

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件： 总6页 (文件大小：199K)
中文：  中文翻译
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BULB39D  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
■
■
■
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
■
■
■
VERY HIGH SWITCHING SPEED  
HIGH RUGGEDNESS  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TAPE & REEL (Suffix  
"T4")  
3
1
APPLICATIONS  
■
ELECTRONIC TRANSFORMERS FOR  
HALOGEN LAMPS  
SWITCH MODE POWER SUPPLIES  
D2PAK  
(TO-263)  
(Suffix "T4")  
■
DESCRIPTION  
The BULB39D is manufactured using high  
voltage Multi Epitaxial Planar technology to  
enhance switching speeds while maintaining wide  
RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
The BUL series is designed for use in electronics  
transformers for halogen lamps.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
850  
V
V
450  
9
V
4
A
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp <5 ms)  
4
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
August 2001  
BULB39D  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-Case  
Rthj-amb Thermal Resistance Junction-Ambient  
Max  
Max  
1.78  
70  
oC/W  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 850 V  
VCE = 850 V  
Min.  
Typ.  
Max.  
Unit  
ICES  
Collector Cut-off  
Current (VBE = 0)  
100  
500  
µA  
µA  
o
Tj = 125 C  
IEBO  
Emitter Cut-off Current VEB = 9 V  
(IC = 0)  
100  
µA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 100 mA  
L = 25 mH  
450  
V
VCE(sat)  
VBE(sat)  
hFE  
Collector-Emitter  
Saturation Voltage  
IC = 1 A  
IC = 2.5 A  
IB = 0.2 A  
IB = 0.5 A  
0.13  
0.5  
1.1  
V
V
Base-Emitter  
Saturation Voltage  
IC = 1 A  
IC = 2.5 A  
IB = 0.2 A  
IB = 0.5 A  
1.1  
1.3  
V
V
DC Current Gain  
IC = 5 A  
IC = 10 mA  
VCE = 10 V  
VCE = 5 V  
4
10  
VCEW  
Maximum Collector  
Emitter Voltage  
Without Snubber  
450  
V
IC = 6 A  
VBB = -2.5 V  
tp = 10 µs  
RBB = 0 Ω  
L = 50µH  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
IC = 2.5 A  
VBE(off) = -5 V  
VCL = 300 V  
IB(on) = 0.5 A  
RBB = 0 Ω  
L = 1 mH  
ts  
tf  
0.7  
50  
1.5  
100  
µs  
ns  
Vf  
Diode Forward Voltage IC = 2 A  
1.5  
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
2/6  
BULB39D  
Safe Operating Areas  
Derating Curve  
DC Current Gain  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
3/6  
BULB39D  
Inductive Fall Time  
Inductive Storage Time  
Reverse Biased SOA  
4/6  
BULB39D  
TO-263 (D2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
2.49  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
TYP.  
MAX.  
4.60  
2.69  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
B2  
C
C2  
D
D1  
E
8.00  
8.50  
0.315  
0.334  
10.00  
10.40  
0.393  
0.409  
E1  
G
4.88  
15.00  
1.27  
1.40  
2.40  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.75  
3.2  
R
0.40  
0.016  
V2  
0o  
8o  
0o  
8o  
- Weight : 1.38 g (typ.)  
- The planaty of the slug must be within 30 µm  
P011P6/G  
5/6  
BULB39D  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  

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