BTA06-600? [ETC]

(65.93 k) ;
BTA06-600?
型号: BTA06-600?
厂家: ETC    ETC
描述:

(65.93 k)

文件: 总6页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BTA/BTB06 Series  
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD  
6A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
6
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 and 800  
V
DRM RRM  
A2  
I
5 to 50  
mA  
G (Q )  
1
DESCRIPTION  
A1  
A2  
Suitable for AC switching operations, the BTA/  
BTB06 series can be used as an ON/OFF function  
in applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control in light dimmers, motor speed  
controllers,...  
A1  
A2  
G
G
TO-220AB  
(BTB06)  
TO-220AB Insulated  
(BTA06)  
The snubberless and logic level versions (BTA/  
BTB...W) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
I
TO-220AB  
Tc = 110°C  
Tc = 105°C  
t = 20 ms  
A
T(RMS)  
6
TO-220AB Ins.  
F = 50 Hz  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
60  
63  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
21  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
April 2002 - Ed: 5A  
1/6  
BTA/BTB06 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB06  
SW CW  
10 35  
Unit  
TW  
BW  
I
(1)  
mA  
V
I - II - III  
I - II - III  
MAX.  
MAX.  
MIN.  
5
50  
GT  
V
V
V
= 12 V  
R = 30 Ω  
L
D
1.3  
GT  
V
= V  
R = 3.3 kI - II - III  
0.2  
D
DRM  
L
GD  
V
Tj = 125°C  
I
(2)  
I = 100 mA  
MAX.  
MAX.  
10  
10  
15  
15  
25  
30  
35  
50  
60  
50  
70  
80  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
G
GT  
L
dV/dt (2)  
V
= 67 %V  
gate open  
D
DRM  
MIN.  
MIN.  
20  
40  
400  
1000  
V/µs  
Tj = 125°C  
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C  
(dV/dt)c = 10 V/µs Tj = 125°C  
2.7  
1.2  
-
3.5  
2.4  
-
-
-
-
-
A/ms  
Without snubber  
Tj = 125°C  
3.5  
5.3  
STANDARD (4 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB06  
Unit  
C
B
I
(1)  
I - II - III  
IV  
25  
50  
50  
100  
mA  
G
MAX.  
V
V
= 12 V  
R = 30 Ω  
D
L
V
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
D
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
25  
40  
80  
200  
5
50  
50  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
G
GT  
L
100  
400  
10  
dV/dt (2)  
V
= 67 %V  
gate open Tj = 125°C  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Value  
Unit  
V (2)  
I
= 5.5 A  
tp = 380 µs  
Tj = 25°C  
MAX.  
1.55  
0.85  
60  
V
V
T
TM  
V
(2)  
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MAX.  
MAX.  
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
V
= V  
RRM  
5
DRM  
RRM  
DRM  
MAX.  
1
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/6  
BTA/BTB06 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (AC)  
TO-220AB  
1.8  
°C/W  
th(j-c)  
TO-220AB Insulated  
2.7  
R
Junction to ambient  
TO-220AB  
TO-220AB Insulated  
°C/W  
th(j-a)  
60  
PRODUCT SELECTOR  
Part Number  
Voltage (xxx)  
Package  
Sensitivity  
Type  
600 V  
800 V  
BTA/BTB06-xxxB  
BTA/BTB06-xxxBW  
BTA/BTB06-xxxC  
BTA/BTB06-xxxCW  
BTA/BTB06-xxxSW  
BTA/BTB06-xxxTW  
X
X
X
X
X
X
X
X
X
X
X
X
50 mA  
50 mA  
25 mA  
35 mA  
10 mA  
5 mA  
Standard  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
Snubberless  
Logic level  
Logic level  
BTB: non insulated TO-220AB package  
ORDERING INFORMATION  
BT A 06 - 600 BW (RG)  
TRIAC  
SERIES  
PACKING MODE  
Blank: Bulk  
RG:Tube  
SENSITIVITY & TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
C: 25mA STANDARD  
CW: 35mA SNUBBERLESS  
SW: 10mA LOGIC LEVEL  
TW: 5mA LOGIC LEVEL  
INSULATION:  
A: insulated  
B: non insulated  
VOLTAGE:  
600: 600V  
800: 800V  
CURRENT: 6A  
OTHER INFORMATION  
Part Number  
Base  
Weight  
Packing  
mode  
Marking  
quantity  
BTA/BTB06-xxxyz  
BTA/BTB06-xxxyz  
BTA/BTB06-xxxyz  
2.3 g  
2.3 g  
250  
50  
Bulk  
BTA/BTB06-xxxyzRG  
Tube  
Note: xxx = voltage, y = sensitivity, z = type  
3/6  
BTA/BTB06 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
8
7
6
5
4
3
2
7
BTB  
6
BTA  
5
4
3
2
1
IT(RMS)(A)  
1
0
Tc(°C)  
0
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
Fig. 3: Relative variation of thermal impedance  
Fig. 4: On-state characteristics (maximum  
versus pulse duration.  
values).  
ITM (A)  
K=[Zth/Rth]  
100  
1E+0  
Tj max.  
Vto = 0.85 V  
Rd = 60 mΩ  
Tj=Tj max  
Zth(j-c)  
1E-1  
10  
Zth(j-a)  
VTM(V)  
tp(s)  
1E-2  
1
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 5: Surge peak on-state current versus  
Fig. 6: Non-repetitive surge peak on-state  
number of cycles.  
current for  
a
sinusoidal pulse with width  
tp < 10ms, and corresponding value of I²t.  
ITSM (A), I²t (A²s)  
ITSM (A)  
1000  
70  
Tj initial=25°C  
60  
t=20ms  
dI/dt limitation:  
50A/µs  
One cycle  
50  
ITSM  
Non repetitive  
Tj initial=25°C  
40  
100  
30  
Repetitive  
Tc=105°C  
20  
I²t  
tp (ms)  
10  
Number of cycles  
10  
0
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
4/6  
BTA/BTB06 Series  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 8-1: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values). Snubberless & Logic Level Types  
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
2.5  
2.4  
2.2  
2.0  
1.8  
2.0  
IGT  
1.6  
1.4  
TW  
1.5  
SW  
BW/CW  
1.2  
IH & IL  
1.0  
0.8  
0.6  
0.4  
1.0  
0.5  
(dV/dt)c (V/µs)  
Tj(°C)  
40 60  
0.2  
0.0  
0.0  
-40 -20  
0.1  
1.0  
10.0  
100.0  
0
20  
80 100 120 140  
Fig. 8-2: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values). Standard Types  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
6
2.0  
1.8  
C
5
4
3
2
1.6  
1.4  
B
1.2  
1.0  
0.8  
0.6  
0.4  
1
0.2  
0.0  
(dV/dt)c (V/µs)  
Tj(°C)  
0
0.1  
1.0  
10.0  
100.0  
0
25  
50  
75  
100  
125  
5/6  
BTA/BTB06 Series  
PACKAGE MECHANICAL DATA  
TO-220AB / TO-220AB Ins.  
DIMENSIONS  
B
REF.  
Millimeters  
Inches  
C
b2  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
b1  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
6/6  

相关型号:

BTA06-600A

TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
ETC

BTA06-600A/F2

600V, 6A, TRIAC, TO-220, TO-220, 3 PIN
STMICROELECTR

BTA06-600A/F5

600V, 6A, TRIAC, TO-220, TO-220, 3 PIN
STMICROELECTR

BTA06-600ARG

TRIAC,600V V(DRM),6A I(T)RMS,TO-220
STMICROELECTR

BTA06-600AW

TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
ETC

BTA06-600B

SNUBBERLESS⑩, LOGIC LEVEL & STANDARD
STMICROELECTR

BTA06-600B

Bi-Directional Triode Thyristor
SEMIWELL

BTA06-600B

6A TRIACS
TGS

BTA06-600B

6A TRIACs
JIEJIE

BTA06-600B/F2

600V, 6A, TRIAC, TO-220, 3 PIN
STMICROELECTR

BTA06-600B/F5

600V, 6A, TRIAC, TO-220AB, TO-220, 3 PIN
STMICROELECTR

BTA06-600BF

6A TRIACS
TGS