BTA06-600B [SEMIWELL]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | BTA06-600B |
| 厂家： | 
SEMIWELL SEMICONDUCTOR |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总6页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
SemiWell Semiconductor
BTA06-600B
UL : E228720
Bi-Directional Triode Thyristor
Symbol
○ 2.T2
Features
▼▲
○
3.Gate
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
= 6 A )
T(RMS)
○
1.T1
◆ High Commutation dv/dt
◆ Isolation Voltage ( V
= 1500V AC )
ISO
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Condition
Ratings
600
Units
V
A
TC = 94 °C
IT(RMS)
6.0
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
ITSM
Surge On-State Current
60/66
A
I2t
PGM
PG(AV)
IGM
18
3.0
I2t
A2s
W
W
A
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
0.3
2.0
VGM
VISO
TJ
Peak Gate Voltage
10
V
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
A.C. 1 minute
1500
- 40 ~ 125
- 40 ~ 150
2.0
V
°C
°C
g
TSTG
Mar, 2004. Rev. 0
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BTA06-600B
Electrical Characteristics
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
1.0
mA
V
─
─
TJ = 125 °C
VTM
IT = 8 A, Inst. Measurement
Peak On-State Voltage
1.5
20
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
V
V
D = 6 V, RL=10 Ω
Gate Trigger Current
20
mA
Ⅱ
GT1
I -
20
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
─
GT1
V-GT1
D = 6 V, RL=10 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
─
TJ = 125 °C, VD = 1/2 VDRM
Non-Trigger Gate Voltage
0.2
V
TJ = 125 °C, [di/dt]c = -3.0 A/ms,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage at Commutation
(dv/dt)c
5.0
V/㎲
─
─
IH
Holding Current
10
mA
─
─
─
Rth(j-c)
Thermal Impedance
Junction to case
3.8
°C/W
─
2/6
BTA06-600B
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
102
101
100
VGM (10V)
101
100
10-1
PGM (3W)
TJ = 125oC
PG(AV) (0.3W)
25 ℃
TJ = 25oC
VGD (0.2V)
101
102
103
0.5
1.0
1.5
2.0
2.5
3.0
3.5
On-State Voltage [V]
Gate Current [mA]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
8
7
6
5
4
3
2
1
0
130
120
110
100
90
θ = 180o
θ = 150o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
θ
π
π
2
θ
360°
θ : Conduction Angle
θ = 30o
θ
θ = 60o
θ = 90o
θ = 120o
π
π
2
θ
360°
θ = 150o
θ : Conduction Angle
θ = 180o
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
80
70
60
50
40
30
20
10
0
60Hz
V_
GT3
1
V+
50Hz
GT1
V_
GT1
0.1
-50
100
101
102
0
50
100
150
Junction Temperature [ oC]
Time (cycles)
3/6
BTA06-600B
Fig 7. Gate Trigger Current vs.
Fig 8. Transient Thermal Impedance
Junction Temperature
10
10
I+
1
GT1
I_
GT1
1
I_
GT3
0.1
-50
10-2
10-1
100
101
102
0
50
100
150
Junction Temperature [ oC]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼▲
6V
▼▲
6V
▼▲
6V
●
●
●
A
A
A
R
R
R
G
G
G
V
V
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
4/6
BTA06-600B
TO-220F Package Dimension
mm
Typ.
Inch
Typ.
Dim.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Min.
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
A
B
C
D
E
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
F
G
H
I
J
K
2.54
5.08
0.100
0.200
L
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
M
N
O
φ
3.7
3.2
1.5
0.146
0.126
0.059
φ 1
φ 2
A
E
I
H
F
B
C
φ
φ 1
φ 2
L
G
M
1
2
3
D
1. T1
2. T2
3. Gate
J
O
N
K
5/6
BTA06-600B
TO-220F Package Dimension, Forming
mm
Typ.
Inch
Typ.
Dim.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Min.
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
A
B
C
D
E
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
F
G
H
I
J
K
2.54
5.08
0.100
0.200
L
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
M
N
O
P
5.0
3.7
3.2
1.5
0.197
0.146
0.126
0.059
φ
φ 1
φ 2
A
E
I
H
F
B
C
φ
φ 1
φ 2
L
G
M
1
2
3
D
1. T1
2. T2
3. Gate
N
O
J
P
K
6/6
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