BTA04TDSA [ETC]
SENSITIVE GATE TRIACS ; 敏感的双向可控硅门\n
| 型号： | BTA04TDSA |
| 厂家： | 
ETC |
| 描述： | SENSITIVE GATE TRIACS
|
| 文件： | 总6页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA04 T/D/S/A
BTB04 T/D/S/A
®
SENSITIVE GATE TRIACS
A2
FEATURES
■
■
■
Very low IGT = 10mA max
Low IH = 15mA max
BTA Family:
Insulating voltage = 2500V(RMS)
(UL recognized: E81734)
G
A1
DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
A1
A2
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (360° conduction angle)
BTA
BTB
Tc = 90°C
Tc = 95°C
tp = 8.3ms
tp = 10ms
tp = 10ms
4
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C)
42
40
8
A
I2t
I2t value
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply: IG = 50mA dIG/dt = 0.1A/µs
Repetitive
F = 50Hz
10
A/µs
Non repetitive
50
Tstg
Tj
Storage and operating junction temperature range
-40 to +150
-40 to +110
°C
°C
Tl
Maximum lead soldering temperature during 10s at 4.5mm from case
260
BTA / BTB04-
Symbol
Parameter
Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
VDRM
VRRM
400
600
700
V
Repetitive peak off-state voltage Tj = 110°C
September 2001 - Ed: 1A
1/6
BTA04 T/D/S/A BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
BTA
BTB
BTA
BTB
4.4
3.2
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)
3.3
°C/W
2.4
GATE CHARACTERISTICS (maximum values)
P
G(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB04
Symbol
Test conditions
Quadrant
Unit
T
5
5
D
5
S
A
IGT
VD = 12V (DC) RL = 33Ω
Tj = 25°C
I - II - III
IV
MAX.
MAX.
MAX.
MIN.
10
10
10
25
mA
10
VGT
VGD
tgt
VD = 12V (DC) RL = 33Ω
Tj = 25°C
Tj =110°C
Tj = 25°C
I - II - III - IV
I - II - III - IV
I - II - III - IV
1.5
0.2
2
V
V
VD = VDRM
RL = 3.3kΩ
VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
TYP.
µs
IL
IG = 1.2IGT
Tj = 25°C
I - III - IV
II
TYP.
10
20
15
10
20
15
20
40
25
20
40
25
mA
IH*
IT = 100mA Gate open
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MAX.
MAX.
TYP.
MIN.
mA
V
VTM
*
ITM = 5.5A
VDRM rated
tp = 380µs
1.65
0.01
0.75
IDRM
IRRM
mA
V
RRM rated
dV/dt *
Linear slope up to
VD = 67% VDRM gate open
10
-
10
-
-
-
V/µs
10
5
10
5
(dI/dt)c* (dI/dt)c = 1.8A/ms
Tj = 110°C
TYP.
1
1
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1
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BTA04 T/D/S/A BTB04 T/D/S/A
PRODUCT INFORMATION
IT(RMS)
VDRM / VRRM
Sensitivity Specification
Package
A
V
T
X
X
X
X
X
D
X
X
S
A
BTA
4
400
600
700
400
600
X
(Insulated)
X
X
BTB
(Uninsulated)
ORDERING INFORMATION
BT A 04 - 400 T
Triac
Series
Sensitivity
Insulation:
A: insulated
Voltage:
B: non insulated
400: 400V
600: 600V
700: 700V
Current: 04A
3/6
BTA04 T/D/S/A BTB04 T/D/S/A
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temper-
ature.
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
1E+2 5E+2
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
4/6
BTA04 T/D/S/A BTB04 T/D/S/A
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
Fig. 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t ≤ 10ms, and cor-
responding value of I2t.
Fig. 9: On-state characteristics (maximum values).
5/6
BTA04 T/D/S/A BTB04 T/D/S/A
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
B
C
b2
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
L
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
F
I
B
A
b1 0.61
b2 1.23
l4
C
4.40
c1 0.49
c2 2.40
c2
a1
e
F
I
2.40
6.20
3.75
l3
l2
a2
I4 15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
OTHER INFORMATION
Ordering type
Marking
Package
Weight
2.3 g
Base qty
Delivery mode
BTA/BTB04-xxxy
BTA/BTB04-xxxy
TO-220AB
250
Bulk
■
■
■
■
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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