BTA06 [SUNTAC]
6A TRIACS; 6A双向可控硅
| 型号： | BTA06 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | 6A TRIACS |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
s
S
6A TRIACS
BTA/BTB06 Series
MAIN FEATURES:
A2
Symbol
Value
6
Unit
A
G
I
T(RMS)
A1
V
/V
600 and 800
V
DRM RRM
A2
I
5 to 50
mA
G (Q )
1
DESCRIPTION
A1
A2
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
A1
A2
G
G
TO-220AB
(BTB06)
TO-220AB Insulated
(BTA06)
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards .
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
RMS on-state current (full sine wave)
Value
Unit
I
TO-220AB
TO-220AB Ins.
F = 50 Hz
Tc = 110°C
Tc = 105°C
t = 20 ms
A
T(RMS)
6
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
60
63
A
TSM
F = 60 Hz
t = 16.7 ms
²
²
²
tp = 10 ms
21
50
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
tp = 20 µs
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
A
1
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
SW CW
10 35
Unit
TW
BW
I
(1)
mA
V
I - II - III
I - II - III
MAX.
MAX.
MIN.
5
50
GT
V
V
V
= 12 V
R = 30 Ω
L
D
1.3
0.2
GT
V
= V
R = 3.3 kΩ I - II - III
D
DRM
L
GD
V
Tj = 125°C
I
(2)
I = 100 mA
MAX.
MAX.
10
10
15
15
25
30
35
50
60
50
70
80
mA
mA
H
T
I
I
= 1.2 I
I - III
II
G
GT
L
dV/dt (2)
V
= 67 %V
gate open
D
DRM
MIN.
MIN.
20
40
400
1000
V/µs
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
2.7
1.2
-
3.5
2.4
-
-
-
-
-
A/ms
Without snubber
Tj = 125°C
3.5
5.3
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
Unit
C
B
I
(1)
I - II - III
IV
25
50
50
100
mA
G
MAX.
V
V
= 12 V
R = 30 Ω
D
L
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
(2)
D
DRM
L
I
I = 500 mA
MAX.
MAX.
25
40
80
200
5
50
50
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
100
400
10
dV/dt (2)
V
= 67 %V
gate open Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V (2)
I
= 5.5 A
tp = 380 µs
Tj = 25°C
MAX.
1.55
0.85
60
V
V
T
TM
V
(2)
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
RRM
5
DRM
RRM
DRM
MAX.
1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2
BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
8
7
6
5
4
3
2
7
BTB
6
BTA
5
4
3
2
1
IT(RMS)(A)
1
0
Tc(°C)
0
0
25
50
75
100
125
0
1
2
3
4
5
6
Fig. 3: Relative variation of thermal impedance
Fig. 4: On-state characteristics (maximum
versus pulse duration.
values).
ITM (A)
K=[Zth/Rth]
100
1E+0
Tj max.
Vto = 0.85 V
Rd = 60 mΩ
Tj=Tj max
Zth(j-c)
1E-1
10
Zth(j-a)
VTM(V)
tp(s)
1E-2
1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
Fig. 6: Non-repetitive surge peak on-state
number of cycles.
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
ITSM (A)
1000
70
Tj initial=25°C
60
t=20ms
dI/dt limitation:
50A/µs
One cycle
50
ITSM
Non repetitive
Tj initial=25°C
40
100
30
Repetitive
Tc=105°C
20
I²t
tp (ms)
10
Number of cycles
10
0
0.01
0.10
1.00
10.00
1
10
100
1000
3
BTA/BTB06 Series
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.4
2.2
2.0
1.8
2.0
IGT
1.6
1.4
TW
1.5
SW
BW/CW
1.2
IH & IL
1.0
0.8
0.6
0.4
1.0
0.5
(dV/dt)c (V/µs)
Tj(°C)
40 60
0.2
0.0
0.0
-40 -20
0.1
1.0
10.0
100.0
0
20
80 100 120 140
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
1.8
C
5
4
3
2
1.6
1.4
B
1.2
1.0
0.8
0.6
0.4
1
0.2
0.0
(dV/dt)c (V/µs)
Tj(°C)
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
4
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