BCR5AS-8 [ETC]
BCR5AS-8 BCR5AS-12 Datasheet 503K/MAR.20.03 ; BCR5AS - 8 BCR5AS - 12数据表503K / MAR.20.03\n
| 型号： | BCR5AS-8 |
| 厂家： | 
ETC |
| 描述： | BCR5AS-8 BCR5AS-12 Datasheet 503K/MAR.20.03
|
| 文件： | 总12页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
BCR5AS
OUTLINE DRAWING
in mm
6.5
5.0±0.2
0.5±0.1
4
TYPE
NAME
VOLTAGE
CLASS
1.0
0.9 MAX
0.5±0.2
2.3 2.3
0.8
Measurement point of
case temperature
1
2
3
2 4
T
T
1
2
TERMINAL
TERMINAL
1
2
3
4
• IT (RMS) ........................................................................ 5A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................30mA
GATE TERMINAL
TERMINAL
3
T
2
1
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
12
1
VDRM
VDSM
Repetitive peak off-state voltage
600
720
V
V
1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
3
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=103°C
5
60Hz sinewave 1 full cycle, peak value, non-repetitive
50
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
10.4
A s
PGM
PG (AV)
VGM
IGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
3
0.3
10
2
W
W
V
Peak gate current
A
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
0.26
°C
°C
g
Tstg
—
Typical value
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
Test conditions
Tj=125°C, VDRM applied
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
—
VTM
Tc=25°C, ITM=7A, Instantaneous measurement
!
@
#
!
@
#
—
V
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
—
mA
mA
mA
V
2
—
30
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
—
30
0.2
—
—
Gate non-trigger voltage
Thermal resistance
3
3.0
°C/W
Rth (j-c)
Junction to case
4
Critical-rate of rise of off-state
commutating voltage
—
—
V/µs
(dv/dt)c
5
Tj=125°C
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 terminal.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
TIME
1. Junction temperature
Tj=125°C
(di/dt)c
MAIN CURRENT
2. Rate of decay of on-state commutating current
TIME
TIME
(di/dt)c=–2.5A/ms
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
7
100
90
80
70
60
50
40
30
20
10
0
5
3
2
T
j = 125°C
101
7
5
3
2
T
j
= 25°C
100
7
5
3
2
10–1
0.6
1.4
2.2
3.0
3.8
4.6
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
(Ι, ΙΙ AND ΙΙΙ)
102
7
TYPICAL EXAMPLE
7
5
3
2
5
I
RGT III
4
3
V
V
GM = 10V
GT = 1.5V
I
RGT I
101
7
5
3
2
2
P
GM = 3W
GM = 2A
P
GM =
102
7
0.3W
I
I
FGT I
100
7
5
4
3
I
I
I
FGT I
RGT I
RGT III
5
3
2
2
V
GD = 0.2V
10–1
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
4.0
TYPICAL EXAMPLE
7
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
5
4
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
DISSIPATION
8
160
140
120
100
80
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
7
6
5
4
3
2
1
0
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
40
360° CONDUCTION
RESISTIVE,
INDUCTIVE LOADS
20
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
160
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE ALUMINUM
140
140
170 170 t2.3
120
120
100
80
60
40
20
0
RESISTIVE, INDUCTIVE LOADS
140 140 t2.3
100
80 80 t2.3
80
60
NATURAL
CONVECTION
40
20
0
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE
INDUCTIVE,
LOADS
0
1
2
3
4
5
6
7
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
105
7
102
7
5
4
TYPICAL EXAMPLE
V
D
= 12V
DISTRIBUTION
TYPICAL
EXAMPLE
5
3
2
3
104
7
5
3
2
2
101
7
103
7
5
5
4
3
3
2
2
102
100
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
160
T+
T–
2
, G+ TYPICAL
, G– EXAMPLE
7
5
TYPICAL EXAMPLE
140
120
100
80
2
3
2
DISTRIBUTION
T+, G–
2
TYPICAL
EXAMPLE
102
7
5
3
2
60
101
7
5
40
3
2
20
100
0
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
COMMUTATION CHARACTERISTICS
7
5
4
160
SUPPLY
VOLTAGE
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
TYPICAL EXAMPLE
TIME
(di/dt)c
Tj = 125°C
140
MAIN CURRENT
TIME
3
MAIN
VOLTAGE
120
TIME
2
V
D
(dv/dt)c
III QUADRANT
100
101
7
5
4
80
60
I QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
3
I QUADRANT
40
2
20
100
7
III QUADRANT
3 4 5 7 101 3 4 5 7 102
2
0
100
2
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
4
IRGT III
A
A
6V
6V
3
IRGT I
2
RG
RG
V
V
102
IFGT I
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
3
2
A
6V
RG
V
101
100
2
3 4 5 7 101
2
3 4 5 7 102
TEST PROCEDURE 3
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
BCR5AS
OUTLINE DRAWING
in mm
6.5
5.0±0.2
0.5±0.1
4
TYPE
NAME
VOLTAGE
CLASS
1.0
0.9 MAX
0.5±0.2
2.3 2.3
0.8
Measurement point of
case temperature
1
2
3
2 4
T
T
1
2
TERMINAL
TERMINAL
1
2
3
4
• IT (RMS) ........................................................................ 5A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................30mA
GATE TERMINAL
TERMINAL
3
T
2
1
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
12
1
VDRM
VDSM
Repetitive peak off-state voltage
600
720
V
V
1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
3
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=128°C
5
60Hz sinewave 1 full cycle, peak value, non-repetitive
50
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
10.4
A s
PGM
PG (AV)
VGM
IGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
3
W
W
V
0.3
10
Peak gate current
2
A
Junction temperature
Storage temperature
Weight
–40 ~ +150
–40 ~ +150
0.26
°C
°C
g
Tstg
—
Typical value
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
Test conditions
Tj=150°C, VDRM applied
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
—
VTM
Tc=25°C, ITM=7A, Instantaneous measurement
!
@
#
!
@
#
—
V
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
—
mA
mA
mA
V
2
—
30
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
—
30
0.2/0.1
—
—
Gate non-trigger voltage
Thermal resistance
3
3.0
°C/W
Rth (j-c)
Junction to case
4
Critical-rate of rise of off-state
commutating voltage
—
—
V/µs
(dv/dt)c
5/1
Tj=125°/150°C
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 terminal.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
TIME
Tj=125°C/150°C
(di/dt)c
MAIN CURRENT
2. Rate of decay of on-state commutating current
TIME
TIME
(di/dt)c=–2.5A/ms
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
7
100
90
80
70
60
50
40
30
20
10
0
5
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
3
2
Tj = 25°C
10–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
5
(Ι, ΙΙ AND ΙΙΙ)
5
3
2
TYPICAL EXAMPLE
VGM = 10V
VGT = 1.5V
3
2
IRGT III
101
7
5
IRGT I
PGM = 3W
IGM = 2A
102
7
5
PGM =
0.3W
3
2
3
2
IFGT I
100
7
5
3
2
IFGT I
IRGT I
101
7
5
3
2
IRGT III
VGD = 0.1V
10–1
7
5
100
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20
0 20 40 60 80 100120140160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
TYPICAL EXAMPLE
7
5
4
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20
0
20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
8
7
6
5
4
3
2
1
0
160
CURVES APPLY REGARDLESS
OF CONDUCTION
ANGLE
140
120
100
80
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40
20
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
VS. RMS ON-STATE CURRENT
160
140
120
100
80
160
NATURAL CONVECTION
ALL FINS ARE ALUMINUM
NO FINS, CURVES
APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
140
120
100
80
170 170 t2.3
140 140 t2.3
80 80 t2.3
60
60
NATURAL
CONVECTION
40
40
RESISTIVE
INDUCTIVE,
LOADS
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
20
20
0
0
0
1
2
3
4
5
6
7
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
106
7
102
7
5
4
TYPICAL EXAMPLE
5
V
D
= 12V
DISTRIBUTION
TYPICAL
3
2
105
7
3
5
3
2
EXAMPLE
2
104
7
101
7
5
4
5
3
2
103
7
3
5
3
2
2
102
100
–60–40–20
0
20 40 60 80 100120140160
–60–40–20
0
20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
160
140
120
100
80
T+
2
, G+ TYPICAL
, G– EXAMPLE
TYPICAL EXAMPLE
5
T–
2
3
2
DISTRIBUTION
T+, G–
2
TYPICAL
EXAMPLE
102
7
5
3
2
60
101
7
5
40
3
2
20
100
0
–60–40–20
0
20 40 60 80 100120140160
–60–40–20
0
20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
OFF-STATE VOLTAGE (Tj = 150°C)
160
140
120
100
80
160
TYPICAL EXAMPLE
TYPICAL EXAMPLE
Tj = 125°C
Tj = 150°C
140
120
100
80
III QUADRANT
III QUADRANT
60
60
40
40
I QUADRANT
I QUADRANT
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
(Tj = 150°C)
7
5
7
5
TYPICAL
TYPICAL
SUPPLY
VOLTAGE
SUPPLY
VOLTAGE
TIME
(di/dt)c
TIME
(di/dt)c
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
MAIN CURRENT
MAIN CURRENT
3
2
TIME
3
2
TIME
MAIN
VOLTAGE
MAIN
VOLTAGE
TIME
TIME
VD
VD
(dv/dt)c
(dv/dt)c
101
101
7
5
7
5
I QUADRANT
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
3
2
3
2
MINIMUM
CHARAC-
TERISTICS
VALUE
100
7
100
7
III QUADRANT
5 7 101
100
2
3
2
3
5 7 102
100
2
3
5 7 101
2
3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
5
4
TYPICAL EXAMPLE
IRGT III
3
IRGT I
IFGT I
2
102
7
5
4
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5AS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
6Ω
6Ω
LOAD
A
A
6V
6V
C1
RG
RG
V
V
R1
C0
R0
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
C
R
1
1
= 0.1~0.47µF
= 47~100Ω
C
R
0
0
= 0.1µF
= 100Ω
A
6V
RG
V
TEST PROCEDURE 3
Mar. 2002
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