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BC860B-4F [ETC]

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS; SOT23封装PNP硅平面通用晶体管
BC860B-4F
型号： BC860B-4F
厂家： ETC    ETC
描述：

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
SOT23封装PNP硅平面通用晶体管

晶体 晶体管 局域网
文件： 总3页 (文件大小：39K)
中文：  中文翻译
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SOT23 PNP SILICON PLANAR  
BC856  
BC858  
BC860  
BC857  
BC859  
GENERAL PURPOSE TRANSISTORS  
ISSUE 6 - APRIL 1997  
PARTMARKING DETAILS  
BC856A–3A BC858C–3L  
BC856B–Z3B BC859A–Z4A BC857  
BC857A–Z3E BC859B–4B BC858  
COMPLEMENTARY TYPES  
E
BC856  
BC846  
BC847  
BC848  
BC849  
BC850  
C
B
BC857B–3F  
BC857C–3G  
BC858A–3J  
BC858B–3K  
BC859C–Z4C BC859  
BC860A–Z4E BC860  
BC860B–4F  
SOT23  
BC860C–4GZ  
ABSOLUTE MAXIMUM RATINGS.  
UNIT  
V
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
SYMBOL  
BC856  
-80  
BC857  
-50  
BC858  
-30  
BC859  
-30  
BC860  
-50  
VCBO  
VCES  
VCEO  
VEBO  
IC  
-80  
-50  
-30  
-30  
-50  
V
-65  
-45  
-30  
-30  
-45  
V
-5  
V
-100  
-200  
-200  
-200  
330  
mA  
mA  
mA  
mA  
mW  
°C  
IEM  
Base Current  
IBM  
Base Current  
IEM  
Power Dissipation at Tamb=25°C  
Ptot  
Operating and Storage  
Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
UNIT CONDITIONS.  
BC856 BC857 BC858 BC859 BC860  
PARAMETER  
SYMBOL  
Collector Cut-Off Current ICBO  
Max  
Max  
nA  
VCB = -30V  
CB = -30V  
Tamb=150°C  
-15  
-4  
V
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat) Typ  
-75 -75  
-75  
Max. -300 -300 -300 -250 -250  
-75 -75  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
Max.  
-250  
-650  
mV IC=-100mA,  
IB=-5mA  
Typ  
Max.  
-300  
-600  
mV IC=-10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-700  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
-850  
mV IC=-100mA,  
IB=-5mA  
Typ  
Base-Emitter Voltage  
VBE  
-600 -600 -600 -580 -580 mV IC=-2mA  
Min  
Typ  
Max  
-650 -650 -650 -650 -650  
-750 -750 -750 -750 -750  
VCE=-5V  
-820  
mV IC=-10mA  
VCE=-5V  
Max  
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the  
operating point IC = 11mA, VCE = 1V at constant base current.  
BC856  
BC858  
BC860  
BC857  
BC859  
ELECTRICAL CHARACTERISTICS (Continued)  
PARAMETER  
Noise Figure  
SYMBOL  
UNIT CONDITIONS.  
BC856 BC857 BC858 BC859 BC860  
N
Typ  
Max  
2
10  
2
10  
2
10  
1
4
1
4
dB  
dB  
VCB = -5V,  
IC=-200µA, RG=2kΩ,  
f=1kHz, ∆f=200Hz  
Typ  
Max  
–
–
–
–
–
–
1.2  
4
1
3
dB  
dB  
VCB = -5V,  
IC=-200µA, RG=2kΩ,  
f=30Hz to 15kHz at  
-3dB points  
Equivalent Noise  
Voltage  
en  
Max  
–
–
–
110 110 nV  
VCB = -5V,  
IC=-200µA, RG=2kΩ,  
f=10Hz to 50Hz at  
-3dB points  
Dynamic  
Characteristics  
Group VI hie  
Min  
Typ  
Max  
0.4  
1.2  
2.2  
0.4  
1.2  
2.2  
0.4  
1.2  
2.2  
–
–
–
–
–
–
kΩ  
kΩ  
kΩ  
Group A  
Min  
Typ  
Max  
1.6  
2.7  
4.5  
kΩ  
kΩ  
kΩ  
Min  
Typ  
Max  
3.2  
4.5  
8.5  
kΩ  
kΩ  
kΩ  
Group B  
Group C  
Min  
Typ  
Max  
–
–
–
–
–
–
6
8.7  
15  
6
8.7  
15  
6
8.7  
15  
kΩ  
kΩ  
kΩ  
Group VI  
Group A  
Group B  
Group C  
hre  
Typ  
Typ  
Typ  
Typ  
2.5  
1.5  
2
2.5  
1.5  
2
2.5  
1.5  
2
–
1.5  
2
–
x10-4  
1.5 x10-4  
2
3
x10-4  
x10-4  
3
3
Group VI  
hfe  
Min  
Typ  
75  
75  
75  
110 110 110  
–
–
–
–
–
–
VCE=-5V  
Ic=-2mA  
f=1kHz  
Max 150 150 150  
Group A  
Min  
Typ  
Max  
125  
220  
260  
Min  
Typ  
Max  
240  
330  
500  
Group B  
Group C  
Min  
Typ  
Max  
–
–
–
450 450 450 450  
600 600 600 600  
900 900 900 900  
Group VI  
Group A  
Group B  
Group C  
hoe  
Typ  
Max  
20  
40  
20  
40  
20  
40  
–
–
–
–
µs  
µs  
Typ  
Max  
18  
30  
µs  
µs  
Typ  
Max  
30  
60  
µs  
µs  
Typ  
Max  
–
–
–
–
60  
110 110 110  
60  
60  
µs  
µs  
BC856  
BC858  
BC860  
BC857  
BC859  
ELECTRICAL CHARACTERISTICS (Continued)  
PARAMETER  
SYMBOL  
Group VI hFE Min  
Typ  
Max 150 150 150  
UNIT CONDITIONS.  
BC856 BC857 BC858 BC859 BC860  
Static  
Forward  
Current Ratio  
75  
75  
75  
–
–
–
–
–
–
IC=-2mA,  
VCE=-5V  
110 110 110  
Group A  
Group B  
Group C  
hFE  
hFE  
hFE  
Typ  
90  
90  
90  
–
–
IC=-0.01mA,VCE=-5V  
Min  
Typ  
Max  
125  
180  
250  
IC=-2mA,  
VCE=-5V  
Typ  
Typ  
120 120 120  
150  
–
–
IC=-100mA,VCE=-5V  
IC=-0.01mA,VCE=-5V  
Min  
Typ  
Max  
220  
290  
475  
IC=-2mA,  
VCE=-5V  
Typ  
200 200 200  
–
–
IC=-100mA,VCE=-5V  
Typ.  
–
270 270 270 270  
IC=-0.01mA,  
VCE=-5V  
Min  
Typ  
Max  
–
–
–
420 420 420 420  
500 500 500 500  
800 800 800 800  
IC=-2mA,  
VCE=-5V  
Typ  
Typ  
–
–
400  
–
–
IC=-100mA,VCE=-5V  
Transition Frequency  
fT  
150 150 150 300 300 MHz IC=-10mA,VCE=-5V  
f=100MHz  
VCB=-10V,  
f=1MHz  
Collector-Base  
Capacitance  
Cobo  
Typ  
4.5  
pF  
Spice parameter data is available upon request for these devices  

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