BC860BF [INFINEON]
PNP Silicon AF Transistor; PNP硅晶体管自动对焦
| 型号： | BC860BF |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistor |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC857BF...BC860BF
PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BC847BF, BC848BF
BC849BF, BC850BF (NPN)
2
1
3
Type
Marking
3Fs
3Ks
4Bs
4Fs
Pin Configuration
Package
TSFP-3
TSFP-3
TSFP-3
TSFP-3
BC857BF
BC858BF
BC859BF
BC860BF
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
CEO
45
30
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
V
V
CES
CBO
EBO
50
30
Collector-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
50
30
Emitter-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
5
5
100
200
200
mA
Collector current
I
C
I
CM
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, T ≤ 128°C
Junction temperature
Storage temperature
I
BM
I
200
250
150
mA
mW
°C
EM
P
S
tot
T
j
T
-65 ... 150
stg
Jun-16-2004
1
BC857BF...BC860BF
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 90
Unit
K/W
1)
R
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
I = 10 mA, I = 0 mA, BC857BF, BC860BF
45
30
-
-
-
-
C
B
I = 10 mA, I = 0 mA, BC858BF, BC859BF
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 mA, BC857BF, BC860BF
50
30
-
-
-
-
C
E
I = 10 µA, I = 0 mA, BC858BF, BC859BF
C
E
Collector-emitter breakdown voltage
I = 10 µA, V = 0 V, BC857BF, BC860BF
50
30
-
-
-
-
C
BE
I = 10 µA, V = 0 V, BC858BF, BC859BF
C
BE
Emitter-base breakdown voltage
I = 1 µA, I = 0 µA
5
-
-
(BR)EBO
CBO
E
C
Collector-base cutoff current
I
µA
-
V
V
= 30 V, I = 0 A
-
-
-
-
0.015
5
CB
CB
E
= 30 V, I = 0 A, T = 150 °C
E
A
2)
DC current gain
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
220
475
C
CE
2)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
75
250
300
650
C
B
I = 100 mA, I = 5 mA
C
B
2)
Base emitter saturation voltage
I = 10 mA, I = 0.5 mA
-
-
700
850
-
-
C
B
I = 100 mA, I = 5 mA
C
B
2)
Base-emitter voltage
I = 2 mA, V = 5 V
BE(ON)
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1
2
For calculation of RthJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
Jun-16-2004
2
BC857BF...BC860BF
AC Characteristics
Transition frequency
-
-
-
-
-
-
-
250
3
-
-
-
-
-
-
-
MHz
pF
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
10
4.5
2
Emitter-base capacitance
= 0.5 V, f = 1 MHz
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
kΩ
11e
12e
21e
22e
C
CE
-4
10
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
C
CE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
C
CE
Open-circuit output admittance
µS
dB
I = 2 mA, V = 5 V, f = 1 kHz
C
CE
Noise figure
F
I = 200 µA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ, BC859BF
-
1
4
4
S
I = 200 µA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ, BC860BF
-
-
1
-
S
Equivalent noise voltage
V
0.11 µV
n
I = 200 µA, V = 5 V, R = 2 kΩ,
C
CE
S
f = 10...50 Hz , BF860BF
Jun-16-2004
3
BC857BF...BC860BF
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 20
CE
C
CEsat FE
EHP00382
EHP00380
103
10 2
mA
5
100 C
25 C
Ι C
h FE
100 C
25 C
-50 C
-50
C
102
5
101
5
100
5
101
5
100
10 -1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.1
0.2
0.3
0.4
V
0.5
mA
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CB
EHP00379
EHP00381
102
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
101
5
100
5
100
5
10 -1
10-1
0
0
50
100
150
C
0.2
0.4
0.6
0.8
V
1.2
TA
VBEsat
Jun-16-2004
4
BC857BF...BC860BF
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ (V
)
T
C
CB
CB0
V
= 5 V
Emitter-base capacitance C = ƒ (V
)
CE
EB
EB0
EHP00378
103
EHP00376
12 BC 856...860
pF
CCB0
CEB0
MHz
5
f T
(
)
10
8
CEBO
102
5
6
4
CCBO
2
101
0
10-1
5
10 0
5
101
10 2
mA
10 -1
5
10 0
101
V
(
VCB0 VEB0
)
Ι C
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS p
10 2
K/W
300
mW
D=0.5
10 1
200
150
100
50
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Jun-16-2004
5
BC857BF...BC860BF
Permissible Pulse Load
h parameter h = ƒ(I ) normalized
e C
P
/P
= ƒ(t )
V
= 5V
totmax totDC
p
CE
10 3
10 2
10 1
10 0
BC 856...860
EHP00383
10 2
5
he
V
CE = 5 V
h11e
D=0
0.005
0.01
0.02
0.05
0.1
10 1
5
h12e
0.2
0.5
10 0
5
h21e
h 22e
10-1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10-1
5
10 0
101
s
mA
t
p
Ι C
h parameter h = ƒ(V ) normalized
Noise figure F = ƒ(V )
CE
e
CE
I = 2mA
I = 0.2mA, R = 2kΩ , f = 1kHz
C
C S
BC 856...860
EHP00385
BC 856...860
EHP00384
20
dB
2.0
1.5
1.0
0.5
0
he
F
Ι C = 2 mA
h11
15
10
5
h12
h22
0
10-1
5
10 0
5
101
V
102
0
10
20
V
30
VCE
VCE
Jun-16-2004
6
BC857BF...BC860BF
Noise figure F = ƒ(f)
I = 0.2mA, V = 5V, R = 2 kΩ
Noise figure F = ƒ(I )
C
V
= 5V, f = 120Hz
C
CE
S
CE
BC 856...860
EHP00387
BC 856...860
EHP00386
20
20
dB
dB
F
F
15
10
15
100 k
10 k
Ω
Ω
RS = 1 M
Ω
10
500
Ω
5
0
5
0
1 k
Ω
10-3
10-2
10-1
100
101
mA
10-2
10 -1
100
101 kHz 10 2
Ι C
f
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 5V, f = 1kHz
V
= 5V, f = 10kHz
CE
CE
BC 856...860
EHP00388
BC 856...860
EHP00389
20
20
dB
dB
F
F
15
15
RS = 1 M
Ω
RS = 1 M
Ω
100 k
Ω
10 k
100 k
10 k
Ω
Ω
Ω
10
10
500
Ω
1 k
Ω
5
0
5
0
Ω
500
1 kΩ
10-3
10-2
10-1
100
101
mA
10-3
10-2
10-1
100
101
mA
Ι C
Ι C
Jun-16-2004
7
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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