ATPAK [ETC]
采用三洋独自的Clip Bonding技术; 采用三洋独自的剪辑粘接技术
| 型号： | ATPAK |
| 厂家： | 
ETC |
| 描述： | 采用三洋独自的Clip Bonding技术 |
| 文件： | 总8页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T O P I C S
推 广 产 品 话 题
薄型大电流功率MOSFET
Halogen-free
「ATPAK 系列 」 (新封装)
ATPAK采用三洋独自的Clip Bonding技术,
实现了同级别制品中最大额定电流100A (与SMP制品同等)!
同时TP享有共同安装领域, 故置换可能!
ATPAK系列
最适于大电流
・PC电源供给模组,
・数字平板电视的背光逆变器,
・电动工具等的
锂离子电池保护电路。
特长
●TP(TO-252)级别最大* 额定电流(~100A)
●导通电阻比三洋以往制品低65%。贡献于Set 的高效率。
●业界最薄* 1.5mm (纵9.5mm×横6.5mm×高1.5mm)
●Power Dissipation比以往品提高 10%, 比SOP封装高75%。
注*: 截至2008年4月14日, TP class中。
Clip Bonding 技术
20081008－1/4
http://semicon.cn.sanyo.com/
三洋半导体公司
推广产品话题
薄型大电流功率MOSFET 「ATPAK20X系列」
ATPAK Series Lineup
*量产时间因机种而异
・ For DC-DC Converter for PC ( VRM etc. )
RDS(on) VGS=10V
Type No.
Polarity
PD
VDSS
VGSS
ID
typ/max
ATP202
ATP203
ATP204
40W
50W
60W
50A
75A
9/12mΩ
6.3/8.2mΩ
4.3/5.6mΩ
N ch
30V
±20V
100A
・ For LiB Protection
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP404
N ch
70W
60V
±20V
95A
5.5/7.2mΩ
・ For DC-DC Converter for PC ( VRM etc. )
RDS(on)
VGS=10V
typ/max
Vin
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP108
ATP206
ATP207
ATP208
ATP301
ATP405
ATP402
ATP602
ATP605
P ch
60W
40W
50W
60W
-45V
-70A
40A
65A
90A
-30A
45A
70A
5A
7/9.5mΩ
10.8/15mΩ
7/9.1mΩ
4.6/6.0mΩ
56/73mΩ
25/33mΩ
12/16mΩ
1.8/2.3Ω
1.2/1.6Ω
24V
N ch
P ch
40V
±20V
-100V
100V
70W
80W
70W
60V
N ch
400V
600V
±30V
5.5A
・ For Switching power supply
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP602
ATP603
ATP605
ATP606
70W
60W
70W
60W
5A
4A
1.8/2.3Ω
2.5/3.2Ω
1.2/1.6Ω
1.7/2.2Ω
600V
N ch
±30V
5.5A
4A
500V
・ For Inverter for Illumination
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP608
ATP609
70W
60W
5.5A
4A
1.4/1.8Ω
1.9/2.5Ω
525V
±30V
Nch
20081008－2/4
http://semicon.cn.sanyo.com/
三洋半导体公司
推广产品话题
薄型大电流功率MOSFET 「ATPAK20X系列」
Power Dissipation 高
SANYO’s Glass epoxy substrate
(copper foil area: Recommend for TP=45mm2)
TP(TO-252)
SOP8
1.60W
Approx.
75%UP
Approx.
10%UP
1.00W
ATPAK
1.75W
导 通 电 阻 低
RDS(on)
VGS=10V(typ)
RDS(on)
VGS=10V(max)
Package size
(mm)
ID rated
Conventional (TP)
ATPAK
6.5×9.5
6.5×9.5
30A
11mΩ
15mΩ
100A
4.3mΩ
5.6mΩ
Ratio
ATPAK/TP
1.0
3.33
0.39
0.37
额定电流/ 封装图/ 焊垫(Solder Pad)图
1.5
6.5
0.4
4
实现了业界最薄*1.5mm
(纵9.5mm×横6.5mm×高1.5mm)
0 to 0.15
1
2
3
0.55
0.8
注*：截至2008年4月14日, TP class中
0.6
0.4
2.3
2.3
unit: mm ( typ )
20081008－3/4
http://semicon.cn.sanyo.com/
三洋半导体公司
薄型大电流功率MOSFET 「ATPAK20X系列」
推广产品话题
应用例
●DC-DC Converter
由Low side侧MOSFET 2个并联使用→1个器件
●Backlight Inverter
MOSFET x 8 (full bridge x 2) →MOSFET x 4 (full bridge x 1)
Lamp x 8 / Bridge x 2
(Nch x 8)
Lamp x 8 / Bridge x 1
(Nch x 4)
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
●Multi-cell Lib Protection Circuit
与SMP相比, 安装面积约降低50%, 安装高降低60%。
P+
B+
CELL
控制IC
B-
P-
Battery Protection
20081008－4/4
http://semicon.cn.sanyo.com/
三洋半导体公司
T O P I C S
Promotional Product Topics
Thin-type large-current Power MOSFET
「ATPAK Series 」 (New Package)
Halogen-free
By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series
realized 100A rated current, which is the largest among the same class.
(equivalent to SMP).
The mount area is common to TP. So, it can replace TP!
ATPAK Series
Best suited for large-current application such as:
・PC power supply module
・Flat digital TV’s backlight inverter
・Electrical tools
Li-ion battery protection circuit
Features
●Current: the industry’s largest*~100A among TP(TO-252) class.
●ON-resistance: 65% lower than that of Sanyo’s earlier products.
● Height: the industry’s thinnest *1.5mm (L 9.5mm x W 6.5mm x H1.5mm)
● PD: 10% higher than that of earlier products. 75% higher than that of SOP products.
*: as of April 14, 2008 among TP class products.
Clip Bonding Tech.
20081008－1/4
www.semiconductor-sanyo.com/network/
Promotional Product Topics
Thin-type Large-current Power MOSFET 「ATPAK20X Series」
ATPAK Series Lineup
Note: The mass production time varies according to each model.
・ For DC-DC Converter for PC ( VRM etc. )
RDS(on) VGS=10V
Type No.
Polarity
PD
VDSS
VGSS
ID
typ/max
ATP202
ATP203
ATP204
40W
50W
60W
50A
75A
9/12mΩ
6.3/8.2mΩ
4.3/5.6mΩ
N ch
30V
±20V
100A
・ For LiB Protection
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP404
N ch
70W
60V
±20V
95A
5.5/7.2mΩ
・ For DC-DC Converter for PC ( VRM etc. )
RDS(on)
VGS=10V
typ/max
Vin
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP108
ATP206
ATP207
ATP208
ATP301
ATP405
ATP402
ATP602
ATP605
P ch
60W
40W
50W
60W
-45V
-70A
40A
65A
90A
-30A
45A
70A
5A
7/9.5mΩ
10.8/15mΩ
7/9.1mΩ
4.6/6.0mΩ
56/73mΩ
25/33mΩ
12/16mΩ
1.8/2.3Ω
1.2/1.6Ω
24V
N ch
P ch
40V
±20V
-100V
100V
70W
80W
70W
60V
N ch
400V
600V
±30V
5.5A
・ For Switching power supply
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP602
ATP603
ATP605
ATP606
70W
60W
70W
60W
5A
4A
1.8/2.3Ω
2.5/3.2Ω
1.2/1.6Ω
1.7/2.2Ω
600V
N ch
±30V
5.5A
4A
500V
・ For Inverter for Illumination
RDS(on) VGS=10V
typ/max
Type No.
Polarity
PD
VDSS
VGSS
ID
ATP608
ATP609
70W
60W
5.5A
4A
1.4/1.8Ω
1.9/2.5Ω
N ch
525V
±30V
20081008－2/4
www.semiconductor-sanyo.com/network/
Promotional Product Topics
Thin-type Large-current Power MOSFET「ATPAK20X Series」
High Power Dissipation
SANYO’s Glass epoxy substrate
(copper foil area: Recommend for TP=45mm2)
TP(TO-252)
SOP8
1.60W
1.00W
1.75W
Approx.
75%UP
Approx.
10%UP
ATPAK
Low ON Resistance
Package size
RDS(on)
VGS=10V(typ)
RDS(on)
VGS=10V(max)
ID rated
(mm)
Conventional (TP)
ATPAK
6.5×9.5
6.5×9.5
30A
11mΩ
15mΩ
100A
4.3mΩ
5.6mΩ
Ratio
ATPAK/TP
1.0
3.33
0.39
0.37
Rated Current / Package / Solder Pad
1.5
6.5
0.4
4
Realized the industry’s
thinnest *1.5mm!
(L9.5mm x W 6.5mm X H 1.5mm)
0 to 0.15
1
2
3
0.55
0.8
0.6
0.4
*: as of April 14, 2008 among TP-class products
2.3
2.3
unit: mm ( typ )
20081008－3/4
www.semiconductor-sanyo.com/network/
Promotional Product Topics
Thin-type Large-current Power MOSFET「ATPAK20X Series」
Application Examples
●DC-DC Converter
Low side: MOSFET x 2 (in parallel) → 1 device
●Backlight Inverter
MOSFET x 8 (full-bridge x 2) → MOSFET x 4 (full-bridge x 1)
8 lamps / 1 Bridge
(Nch: 4)
8 lamps / 2 Bridges
(Nch: 8)
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
CCFL
●Multi-cell Li-ion battery protection circuit
Compared with SMP, mount area is reduced by approx. 50%, an height is reduced by 60%.
P+
B+
CELL
B-
Control IC
P-
Battery Protection
20081008－4/4
www.semiconductor-sanyo.com/network/
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