APT1002R4CN [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO ; 晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 5A I（ D） | TO- 254ISO\n
| 型号： | APT1002R4CN |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO
|
| 文件： | 总4页 (文件大小：223K) |
| 下载： | 下载PDF数据表文档文件 |
APT1002RAN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6A I(D) | TO-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
ETC
APT1002RBN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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49
ADPOW
APT1002RBN-BUTT
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT1002RBN-GULLWING
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT1002RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ETC
APT1002RBNR-GULLWING
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
ADPOW
APT1002RCN
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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27
ADPOW
APT1002RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIPWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ETC
APT1002RDN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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32
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ADPOW
APT10030L2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
ADPOW
APT10030L2VFRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ADPOW
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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37
ADPOW
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