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APT1002RBN-BUTT [ADPOW]

Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247;

APT1002RBN-BUTT


元器件型号：	APT1002RBN-BUTT
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
PDF文件：	总4页 (文件大小：54K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1002RBN-BUTT参数

APT1002RBN-GULLWING

暂无描述

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0 ADPOW

APT1002RBNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD

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14 ETC

APT1002RBNR-GULLWING

暂无描述

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1 ADPOW

APT1002RCN

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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27 ADPOW

APT1002RDN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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12 ETC

APT1002RDN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW

APT10030L2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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32 ADPOW

APT10030L2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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12 ADPOW

APT10030L2VFR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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15 ADPOW

APT10030L2VFRG

Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN

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0 MICROSEMI

APT10030L2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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16 ADPOW

APT10030L2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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37 ADPOW

APT10030L2VR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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17 ADPOW

APT10030L2VRG

Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN

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0 MICROSEMI

APT10035B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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13 ADPOW

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