6MBP100RTB-060 [ETC]
6 IPM IGBT ; 6 IPM IGBT\n
| 型号： | 6MBP100RTB-060 |
| 厂家： | 
ETC |
| 描述： | 6 IPM IGBT
|
| 文件： | 总22页 (文件大小：1013K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
b
１．Package Outline Drawings
Package type : P611
±1
109
95
±0.3
±0.3
13.8
67.4
±0.2
±0.2
±0.2
10.16
±0.25
10.16
10.16
±0.15
±0.3
3.22
15.24
±0.1
4-φ 5.5
±0.15
5.08
±0.15
5.08
2.54
5.08
1
4
7
10
16
B
P
N
W
V
U
0.5
24
26
26
16-
2-φ
2.5
0.64
6-M5
Lot No.
Indication of Lot No.
Odered No. in monthly
Manufactured month
(Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D)
Last digit of manufactured year
±0.1
±0.1
2.54
3.22±0.3 2.54
2 2 2
φ
2.5
(φ1～1.5)
□0.64
Details of control terminals
Dimensions in mm
a
b
Fuji Electric Co.,Ltd.
MS6M0654
3/22
H04-004-03
２．PinDescriptions
Main circuit
Symbol
Description
Positive input supplyvoltage.
Output (U).
P
U
V
W
N
B
Output (V).
Output (W).
Negative input supplyvoltage.
No contact.
Control circuit
№ Symbol
Description
① GNDU High side ground (U).
②
③
VinU Logic input for IGBT gate drive (U).
VccU High side supply voltage (U).
④ GNDV High side ground (V).
⑤
⑥
VinV Logic input for IGBT gate drive (V).
VccV High side supply voltage (V).
⑦ GNDW High side ground (W).
VinW Logic input for IGBT gatedrive (W).
⑨ VccW High side supply voltage (W).
⑧
⑩
⑪
GND Low side ground.
Vcc Low side supply voltage.
⑫ VinDB No contact.
⑬
⑭
⑮
⑯
VinX Logic input for IGBT gate drive (X).
VinY Logic input for IGBT gate drive (Y).
VinZ Logic input for IGBT gate drive (Z).
ALM
Low side alarm signal output.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
4/22
３．Brock Diagram
P
U
VccU
VinU
③
②
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
VZ
GNDU
VccV
①
⑥
VinV
⑤
VZ
V
W
④
⑨
GNDV
VccW
VinW
⑧
VZ
⑦
⑪
GNDW
Vcc
VinX
GND
⑬
⑩
VZ
VinY
VinZ
⑭
⑮
VZ
VZ
B
N
NC
⑫
⑯
NC
RALM
Over heating protection
circuit
Pre-driversincludefollowingfunctions
① Amplifierfordriver
② Short circuitprotection
ALM
1.5kΩ
③ Under voltage lockout circuit
④Overcurrent protection
⑤ IGBT chip over heating protection
a
b
Fuji Electric Co.,Ltd.
MS6M0654
5/22
４．Absolute Maximum Ratings
Tc＝25℃ unless otherwise specified.
Items
DC
Symbol
VDC
Min.
0
Max.
450
500
400
600
100
200
100
347
20
Units
V
Bus Voltage
Surge
VDC(surge)
Vsc
Vces
Ic
0
V
(between terminal P and N)
Shortoperating
200
0
V
Collector-Emitter Voltage *1
V
DC
―
A
Collector Current
1ms
Icp
―
A
Duty72.3% *2
-Ic
―
A
Collector Power Dissipation One transistor *3
Supply Voltage of Pre-Driver *4
Input Signal Voltage *5
Pc
―
W
Vcc
Vin
-0.5
-0.5
―
V
Vcc+0.5
3
V
Input Signal Current
Iin
mA
V
Alarm Signal Voltage *6
VALM
ＩALM
Tj
-0.5
―
Vcc
20
Alarm Signal Current *7
mA
℃
℃
℃
Junction Temperature
―
150
100
125
Operating Case Temperature
Storage Temperature
Topr
Tstg
-20
-40
Isolating Voltage
Viso
―
―
―
AC2500
3.5
V
(Terminalto base, 50/60Hz sine wave 1min.) *8
Screw Torque
Terminal (M5)
Mounting (M5)
Nm
Ｎｏｔｅ
*1 ：Vces shall be applied to the input voltage between terminal P and U or Ｖor W or ,
N and U or V or W．
*2 ：125℃/FWD Rth(j-c)/(Ic×VF MAX)=125/0.665/(100×2.6)×100=72.3%
*3 ：Pc=125℃/IGBT Rth(j-c)=125/0.36=347W [Inverter]
*4 ：VCC shall be applied to the input voltage between terminal No.3 and 1,
6 and 4, 9 and 7, 11 and 10
*5 ： Vｉｎ shall be applied to the input voltage between terminal No.2 and 1,
5 and 4, 8 and 7, 13,14,15 and 10
．
*6 ：ＶＡＬＭ shall be applied to the voltage between terminal No.16 and 10．
*7 ：ＩＡＬＭ shall be applied to the input current to terminal No.16 ．
*8 ：50Hz/60Hz sine wave 1 minute.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
6/22
H04-004-03
５．Electrical Characteristics
Tj＝25℃，Vcc＝15V unless otherwise specified.
5.1 Main circuit
Item
Symbol
Conditions
ＶＣＥ＝600V
Vin terminal open.
Min. Typ. Max. Units
Collector Current
at off signal input
Collector-Emitter
saturation voltage
Forward voltage of
FWD
ICES
-
-
1.0
mA
Terminal
Chip
-
-
-
1.8
-
2.3
-
Ｖ
V
VCE（ｓａｔ） Ｉｃ＝100A
Terminal
Chip
-
2.6
-
Ｖ
V
VF
-Ｉｃ＝100A
-
1.6
-
Turn-on time
ton
VDC＝300V、Tj=125℃
Ic＝100A Fig.1，Fig.6
1.2
-
-
Turn-off time
toff
-
3.6
us
VDC＝300V
Reverse recovery time
trr
-
-
0.3
IF＝100A Fig.1，Fig.6
internal wiring
Maximum Avalanche
Energy
inductance＝50nH
Main circuit wiring
inductance＝54nH
PAV
100 -
- mJ
(A non-repetition)
5.2 Control circuit
Item
Symbol
Conditions
Switching Frequency:
0～15kHz
Min. Typ. Max. Units
Supply curr ent of
pre-driver (one unit)
Supply current of
pre-driver
P-side
N-side
Iccp
Iccn
-
-
-
-
18
65
mA
mA
V
Tc＝-20～125℃
Fig.7
ON
1.00 1.35 1.70
1.25 1.60 1.95
Input signal threshold voltage
Input Zener Voltage
Vin(th)
Vz
OFF
Rin＝20kΩ
Tc＝-20℃ Fig.2
Tc＝25℃ Fig.2
Tc＝125℃ Fig.2
-
1.1
-
8.0
-
-
-
V
ms
ms
ms
Ω
Alarm Signal Hold Time
tALM
2.0
-
-
-
4.0
Limiting Resistor for Alarm
RALM
1425 1500 1575
a
b
Fuji Electric Co.,Ltd.
MS6M0654
7/22
H04-004-03
5.3 Protection Section （Vcc＝１５Ｖ）
Item
Symbol
Ioc
Conditions
Tj=125℃
Min. Typ. Max. Units
a
Over Current Protection Level of
Inverter circuit
150
-
-
A
-
-
5
-
-
8
us
us
Over Current ProtectionDelay time
tdoc
tsc
Tj=125℃
SC Protection Delay time
Tj=125℃ Fig.4
Surface of
IGBT Chips
IGBT Chips Over Heating
TjOH
TjH
150
-
-
20
-
-
-
℃
℃
℃
Protection Temperature Level
Over Heating Protection Hysteresis
Over Heating Protection
VDC=0V,IC=0A
TｃOH
110
125
Temperature Level
CaseTemperature
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
TcH
VUV
VH
-
20
-
-
12.5
-
11.0
0.2
V
0.5
６．Thermal Characteristics （Ｔｃ＝２５℃）
Item
Symbol Min. Typ. Max. Units
Junction to Case
IGBT Rth(j-c)
-
-
-
-
-
0.36
0.665
-
Inverter
Thermal Resistance *9
Case to Fin Thermal Resistance with Compound
℃/W
FWD
Rth(j-c)
Rth(c-f)
0.05
７．Noise Immunity
（Vdc=300V、Vcc=15V、TestCircuitFig5.）
Item
Conditions
Min. Typ. Max. Units
Common mode
rectangular noise Judge：no over-current, no miss operating
Pulse width 1us,polarity ±,10minuets
±2.0
±5.0
-
-
-
-
kV
kV
Rise time 1.2us, Fall time 50us
Common mode
lightning surge
Interval 20s, 10 times
Judge：no over-current, no miss operating
８．Recommended Operating Conditions
Item
Symbol
VDC
Min. Typ. Max. Units
DC Bus Voltage
-
-
15.0
-
400
16.5
3.0
V
V
Power Supply Voltage of Pre-Driver
Screw Torque (M5)
Vcc
-
13.5
2.5
Nm
９．Weight
Item
Symbol
Wt
Min. Typ. Max. Units
450
Weight
-
-
g
*9 ：(For1device ，Caseisunder the device )
a
b
Fuji Electric Co.,Ltd.
MS6M0654
8/22
H04-004-03
Ｖｉｎ（ｔｈ）
Ｏｎ
Ｖｉｎ
Ｉｃ
Ｖｉｎ（ｔｈ）
ｔｒｒ
９０％
５０％
９０％
ｔｏｎ
1０％
ｔｏff
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
on
on
Gate On
Vge (Inside IPM)
Fault (Inside IPM)
/ALM
Gate Off
normal
alarm
2ms(typ.)
tALM＞Max.
tALM＞Max.
tALM
①
②
③
Fault：Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
Necessary conditions for alarm reset (refer to ① to ③ in figure2.)
① This represents the case when a failure -causing Fault lasts for a period more than
tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared.
② This represents the case when the ON condition of the input Vin lasts for a period
more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions.
③ This represents the case whe n the Fault disappears and the Vin turns OFF within
tALM. The alarm resets after lasting for a period of the specified time tALM.
off
/Vin
on
Ioc
on
Ic
alarm
tdoc
/ALM
①
②
＜tdoc
Figure 3. Over-current Protection Timing Diagram
Period ①: When a collector current over the OC level flows and the OFF command is input
within a period less than the trip delay time tdoc, the current is hard-interrupted
and no alarm is output.
Period ②: When a collector current over the OC level flows for a period more than the trip
delay time tdoc, the current is soft -interrupted. If this is detected at the lower
arm IGBTs, an alarm is output.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
9/22
H04-004-03
t
SC
Ic
I
Ic
I
Ic
I
ALM
ALM
ALM
Figure.4 Definition of tsc
CT
P
U
V
W
N
VccU
VinU
20k
20k
IPM
DC
15V
SW1
SW2
AC200V
GNDU
Vcc
+
DC
15V
VinX
GND
4700p
Noise
Earth
Cooling
Fin
Figure 5. Noise Test Circuit
Vcc
P
L
DC
300V
20k
IPM
DC
15V
+
Vin
Ic
HCPL-
4504
GND
N
Figure 6. Switching Characteristics Test Circuit
Icc
Vcc
A
P
U
V
W
N
IPM
DC
Vin
15V
P.G
+8V
fsw
GND
Figure 7. Icc Test Circuit
a
b
Fuji Electric Co.,Ltd.
MS6M0654
10/22
H04-004-03
１0． Truth table
10.1 IGBT Control
The following table shows the IGBT ON/OFF status with respect to the input signal Vin.
The IGBT turn-on when Vin is at“Low”level under no alarm condition.
Input
(Vin)
Output
(IGBT)
Low
ON
High
OFF
10.2 Fault Detection
(1) When a fault is detected at the high side , only the detected arm stops its output. At
that time the IPM dosen’t any alarm.
(2) When a fault is detected at the low side, all the lower arms stop their outputs and the
IPM outputs an alarm of the low side.
ＩＧＢＴ
Alarm Output
ALM
Fault
U-phase
V-phase
W-phase
Low side
OC
OFF
OFF
OFF
*
*
*
*
*
*
*
*
*
H
H
H
High side
U-phase
UV
TjOH
OC
*
*
*
OFF
OFF
OFF
*
*
*
*
*
*
H
H
H
High side
V-phase
UV
TjOH
OC
*
*
*
*
*
*
OFF
OFF
OFF
*
*
*
H
H
H
High side
W-phase
UV
TjOH
OC
*
*
*
*
*
*
*
*
*
OFF
OFF
OFF
L
L
L
Low side
UV
TjOH
Case
TcOH
*
*
*
OFF
L
Temperature
*：Depend on input logic.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
11/22
１１. Cautions for design and application
1. Trace routing layout should be designed with particular attention to least stray capacity
between the primary and secondary sides of optical isolators by minimizing the wiring
length between the optical isolators and the IPM input terminals as possible.
フォトカプラとＩＰＭの入力端子間の配線は極力短くし、フォトカプラの一次側と二次側の浮遊容量を小さくした
パターンレイアウトにして下さい。
2. Mount a capacitor between Vcc and GND of each high -speed optical isolator as close
to as possible. 高速フォトカプラの Vcc-GND 間に、コンデンサを出来るだけ近接して取り付けて下さい。
3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH ≦ 0.8µs.
高速フォトカプラは、tpHL,tpLH≦0.8us、高CMRタイプをご使用ください。
4. For the alarm output circuit, use low-speed type optical isolators with CTR ≧ 100%.
アラーム出力回路は、低速フォトカプラ CTR≧100%のタイプをご使用ください。
5. For the control power Vcc, use four power supplies isolated each. And they should be
designed to reduce the voltage variations.
制御電源Vccは、絶縁された４電源を使用してください。また、電圧変動を抑えた設計として下さい。
6. Suppress surge voltages as possible by reducing the inductance between the DC bus P
and N, and connecting some capacitors between the P and N terminals
P-N 間の直流母線は出来るだけ低インダクタンス化し、P-N 端子間にコンデンサを接続するなどしてサージ
電圧を低減して下さい。
7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF
between the three-phase lines each and the ground.
AC ラインからのノイズ侵入を防ぐために、３相各線－アース間に４７００ｐＦ程のコンデンサを接続して下さい
8. At the external circuit, never connect the control terminal
①GNDU to the main
terminal U-phase, ④GNDV to V-phase, ⑦GNDW to W-phase, and ⑩GND to N-phase.
Otherwise, malfunctions may be caused.
制御端子①ＧＮＤＵと主端子Ｕ相、制御端子④ＧＮＤVと主端子 V 相、制御端子⑦ＧＮＤW と主端子W 相、
制御端子⑩ＧＮＤと主端子N を外部回路で接続しないで下さい。誤動作の原因になります。
9. Take note that an optical isolator’s response to the primary input signal becomes slow if
a capacitor is connected between the input terminal and GND.
入力端子-GND 間にコンデンサを接続すると、フォトカプラ一次側入力信号に対する応答時間が長くなりま
すのでご注意ください。
a
b
Fuji Electric Co.,Ltd.
MS6M0654
12/22
H04-004-03
10. Taking the used isolator’s CTR into account, design with a sufficient allowance to decide
the primary forward current of the optical isolator.
フォトカプラの一次側電流は、お使いのフォトカプラの CTRを考慮し十分に余裕をもった設計にして下さい。
11. Apply thermal compound to the surfaces between the IPM and its heat sink to reduce
the thermal contact resistance.
接触熱抵抗を小さくするために、ＩＰＭとヒートシンクの間にサーマルコンパウンド塗布して下さい。
12. Finish the heat sink surface within roughness of 10 µm and flatness (camber) between
screw positions of 0 to +100µm. If the flatness is minus, the heat radiation becomes
worse due to a gap between the heat sink and the IPM. And, if the flatness is over
+100µm, there is a danger that the IPM copper
base may be deformed and this may cause a
+100μm
0
dielectric breakdown.
ヒートシンク表面の仕上げは、粗さ 10um 以下、ネジ位置間
Heat sink
での平坦度（反り）は、0～100um として下さい。平坦度がマ
Mounting holes
イナスの場合、ヒートシンクと IPM の間に隙間ができ放熱が
悪化します。また、平坦度が＋100um 以上の場合ＩＰＭの銅
ﾍﾞｰｽが変形し絶縁破壊を起こす危険性があります。
13. This product is designed on the assumption that it applies to an inverter use. Sufficient
examination is required when applying to a conver ter use. Please contact Fuji Electric
Co.,Ltd if you would like to applying to converter use.
本製品は、インバータ用途への適用を前提に設計されております。コンバータ用途へ適用される場合は、十分な
検討が必要です。もし、コンバータへ適用される場合は御連絡ください。
14. Please see the 『Fuji IGBT -IPM R SERIES APPLICATION MANUAL 』and 『FujiIGBT
MODULES N SERIES APPLICATION MANUAL』.
『富士 IGBT-IPM R シリーズ アプリケーションマニュアル』及び『IGBT ﾓｼﾞｭｰﾙ N シリーズ アプリケーションマニュ
アル』を御参照ください。
a
b
Fuji Electric Co.,Ltd.
MS6M0654
13/22
H04-004-03
１２．Example of applied circuit 応用回路例
AC200V
20kΩ
P
③
+
10uF
IPM
IF
②
Vcc
0.1uF
①
U
V
20kΩ
⑥
+
10uF
IF
⑤
Vcc
+
0.1uF
M
④
20kΩ
W
⑨
+
10uF
IF
⑧
Vcc
0.1uF
⑦
B
N
⑪
⑫
Vcc
⑩
20kΩ
+
10uF
IF
⑬
0.1uF
20kΩ
+
10uF
IF
⑭
0.1uF
20kΩ
+
10uF
IF
⑮
0.1uF
1k
5V
⑯
１３．Package and Marking 梱包仕様
Please see the MT6M4140 which is packing specification of P610 & P611 package．
Ｐ６１０，６１１梱包仕様書 ＭＴ６Ｍ４１４０を御参照ください。
１４．Cautions for storage and transportation 保管、運搬上の注意
・ Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%).
常温常湿(5～35℃、45～75%)で保存して下さい。
・ Avoid a sudden change in ambient temperature to prevent condensation on the
module surfaces. モジュールの表面が結露しないよう、急激な温度変化を避けて下さい。
・ Avoid places where corrosive gas generates or much dust exists.
腐食性ガスの発生場所、粉塵の多い場所は避けて下さい。
・ Store the module terminals under unprocessed conditions
モジュールの端子は未加工の状態で保管すること。.
・ Avoid physical shock or falls during the transportation.
運搬時に衝撃を与えたり落下させないで下さい。
１５．Scope of application 適用範囲
This specification is applied to the IGBT-IPM (type: 6MBP100RTB060).
本仕様書は、IGBT-IPM (型式：6MBP100RTB060)に適用する。
１６．Based safety standards 準拠安全規格
UL1557
a
b
Fuji Electric Co.,Ltd.
MS6M0654
14/22
H04-004-03
b
１８．Reliability Test Items
Reference
norms
Test
cate-
gories
Number Accept-
of ance
sample number
Test items
Test methods and conditions
EIAJ
ED-4701
Test Method 401
MethodⅠ
1 Terminal strength Pull force
: 40 N (main terminal)
10 N (control terminal)
: 10 ±1 sec.
5
( 1 : 0 )
端子強度
(Pull test)
Test time
Test Method 402
methodⅡ
2 Mounting Strength Screw torque
: 2.5 ~ 3.5 N･m (M5)
: 10 ±1 sec.
: 10～500Hz
5
5
( 1 : 0 )
( 1 : 0 )
締付け強度
3 Vibration
振動
Test time
Test Method 403
Condition code B
Range of frequency
Sweeping time
Acceleration
: 15 min.
100 m/s2
:
Sweeping direction
Test time
Maximum acceleration :
Pulse width
: Each X,Y,Z axis
: 6 hr. (2hr./direction)
5000 m/s2
1.0 ms
Test Method 404
Condition code B
4 Shock
5
5
( 1 : 0 )
( 1 : 0 )
衝撃
Direction
Test time
: Each X,Y,Z axis
: 3 times/direction
: 235 ±5 ℃
: 5.0 ±0.5 sec.
: 1 time
5 Solderabitlity
はんだ付け性
Solder temp.
Immersion duration
Test time
Test Method 303
Condition code A
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
soldering heat
はんだ耐熱性
Solder temp.
Immersion time
Test time
: 260 ±5 ℃
: 10 ±1sec.
: 1 time
Test Method 302
Condition code A
5
( 1 : 0 )
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Test Method 201
Test Method 202
1 High temperature Storage temp.
storage 高温保存 Test duration
: 125 ±5 ℃
: 1000 hr.
: -40 ±5 ℃
: 1000 hr.
: 85 ±2 ℃
: 85 ±5%
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
2 Low temperature
storage 低温保存 Test duration
3 Temperature Storage temp.
humidity storage Relative humidity
Storage temp.
Test Method 103
Test code C
高温高湿保存
4 Unsaturated
pressure cooker
Test duration
Test temp.
Atmospheric pressure
: 1000hr.
Test Method 103
Test code E
: 120 ±2 ℃
5
5
( 1 : 0 )
( 1 : 0 )
1.7x105 Pa
:
プレッシャークッカー Test humidity
: 85 ±5%
Test duration
: 96 hr.
Test Method 105
5 Temperature
cycle
Test temp.
: Minimum storage temp. -40 ±5℃
Maximum storage temp. 125 ±5℃
Normal temp.
5 ~ 35℃
温度サイクル
Dwell time
: Tmin ~ TN ~ Tmax ~ T
N
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles
Test temp.
: 100 cycles
Test Method 307
method Ⅰ
6 Thermal shock
熱衝撃
+0
5
( 1 : 0 )
: High temp. side 100 -5
℃
Condition code A
+5
Low temp. side 0 -0
℃
Fluid used
: Pure water (running water)
: 5 min. par each temp.
: 10 sec.
Dipping time
Transfer time
Number of cycles
: 10 cycles
a
b
Fuji Electric Co.,Ltd.
MS6M0654
19/22
H04-004-03
b
Test
cate-
gories
Number Accept-
Reference norms
EIAJ
Test items
Test methods and conditions
of
ance
ED-4701
sample number
Test Method 101
1 High temperature Test temp.
reverse bias
: Ta = 125 ±5℃
(Tj ≦150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
Vcc = 15V
: 1000 hr.
: 85 ±2 ℃
: 85 ±5 %
: VC = 0.8×VCES
Vcc = 15V
: Applied DC voltage to C-E
: 1000 hr.
: 2 sec.
: 18 sec.
: D
Tj=100 ±5deg
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
Bias Voltage
Bias Method
高温逆ﾊﾞｲｱｽ
Test duration
Test temp.
Relative humidity
Bias Voltage
Test Method 102
Condition code C
2 Temperature
humidity bias
高温高湿ﾊﾞｲｱｽ
Bias Method
Test duration
ON time
OFF time
Test temp.
Test Method 106
3 Intermitted
operating life
(Power cycle)
断続動作
Tj ≦150 ℃, Ta=25 ±5℃
Number of cycles
: 15000 cycles
１９．Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
Unit
Note
Electrical
Leakage current
ICES
-
USL×2
mA
V
characteristic Saturation voltage
Forward voltage
VCE(sat)
-
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
VF
Ｒth(j-c)
-
V
℃
/W
Thermal
IGBT
FWD
-
℃
Ｒth(j-c)
Ioc
/W
resistance
-
Over Current Protection
Alarm signal hold time
Over heating Protection
Ａ
ms
℃
LSL×0.8
LSL×0.8
LSL×0.8
tALM
TcOH
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
-
Visual
inspection
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
20/22
H04-004-03
Warnings
1. This product shall be used within its ab solute maximum rating (voltage, current, and
temperature). This product may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素
子が破壊する場合があります。
2. Connect adequate fuse or protector of circuit between three-phase line and this
product to prevent the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて２次破壊を防いでください。
3. When studying the device at a no rmal turn-off action, make sure that working
paths of the turn -off voltage and current are within the RBSOA specification.
And ,when studying the device duty at a short
-circuit current non -repetitive
interruption, make sure that the paths are also within the avalanche proo f(PAV)
specification which is calculated from the snubber inductance, the IPM inner
inductance and the turn -off current. In case of use of IGBT
specifications, it might be possible to be broken.
-IPM over these
通常のターンオフ動作における素子責務の検討の際には、ターンオフ電圧・電流の動作軌跡が RBSOA
仕様内にあることを確認して下さい。また、非繰返しの短絡電流遮断における素子責務の検討に際して
は、スナバーインダクタンスとＩＰＭ内部インダクタンス及びターンオフ電流から算出されるアバランシェ耐
量(PAV)仕様内である事を確認して下さい。これらの仕様を越えて使用すると、素子が破壊する場合が
あります。
4. Use this product after realizing enough working on environment and considering of
product's reliability life.This product may be broken before target life of the system
in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さ
い。製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合がありま
す。
a
5. If the product had been used in the environment with acid, organic matter, and
corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's
performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観
などの保証は致しかねます。
6. Use the product within the power cycle curve (Technical Rep.No. : MT6M4057)
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料 No.: MT6M4057)
7. Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす
場合があります。
a
b
Fuji Electric Co.,Ltd.
MS6M0654
21/22
8. According to the outline drawing, select proper length of screw for main terminal.
Longer screws may break the case.
本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。ネジが長いとケースが破
損する場合があります。
9. If excessive static electricity is applied to the control terminals, the devices can
be broken. Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対
策を実施して下さい。
Caution
1. Fuji Electric is constantly making every endeavor to improve the product quality and
reliability. However, semiconductor products may rarely happen to fail or malfunction. To
prevent accidents causing injuly or death, damage to property like by fire, and other social
damage resulted from a failure or malfunction of the Fuji Electric semiconductor product s,
take some measures to keep safety such as redundant design, spread-fire-preventive design,
and malfunction-protective design..
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤
動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災等によ
る財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全
確保のための手段を講じて下さい。
2. The application examples described in this specification only explain typical ones that
used the Fuji Electric products. This specification never ensure to enforce the industrial
property and other rights, nor license the enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
3. The product described in this specification is not designed nor made for being applied to the
equipment or systems used under life -threatening situations. When you consider applying
the product of this specification to particular used, such as vehicle-mounted units, shipboard
equipment, aerospace equipment, medical devices, atomic control systems and submarine
ralaying equipment o r systems, please apply after confirmation of this product to be
satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられ
ることを目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医
療機器、原子力制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム
構成及び要求品質に満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
a
b
Fuji Electric Co.,Ltd.
MS6M0654
22/22
相关型号：
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