5962F9175801MXA [ETC]
Operational Amplifier ; 运算放大器\n
| 型号： | 5962F9175801MXA |
| 厂家： | 
ETC |
| 描述： | Operational Amplifier
|
| 文件： | 总16页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
B
C
Changes in accordance with N.O.R. 5962-R145-93.
Changes in accordance with N.O.R. 5962-R234-93.
93-05-25
93-10-15
99-02-10
M. A. FRYE
M. A. FRYE
R. MONNIN
Add case outline X, which is a 10-lead flat pack. Make changes to 1.3, 3.2.1,
3.2.2, and figure 1. Also, make changes to CMRR, +VO, -VO, GFPL, GFPH,
GFR, SSBW, HD2, HD3, and VN tests as specified in table I herein.
Redrawn. - ro
D
E
F
Make change to input offset current test as specified under table I.
Delete figure 1. - ro
00-04-14
00-06-30
01-06-14
R. MONNIN
R. MONNIN
R. MONNIN
Add radiation hardened requirements. - ro
Make correction to input referred noise voltage test unit as specified in
table I. - ro
THE ORIGINAL FIRST SHEET OF THIS DOCUMENT HAS BEEN REPLACED.
REV
SHEET
REV
E
SHEET
15
REV STATUS
OF SHEETS
PMIC N/A
REV
E
1
E
2
E
3
E
4
E
5
E
6
E
7
E
8
E
9
E
E
E
E
E
SHEET
10
11
12
13
14
PREPARED BY
RICK OFFICER
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
CHECKED BY
CHARLES E. BESORE
STANDARD
MICROCIRCUIT
DRAWING
http://www.dscc.dla.mil
APPROVED BY
MICHAEL A. FRYE
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
MICROCIRCUIT, LINEAR, HIGH SPEED,
VOLTAGE, FEEDBACK OPERATIONAL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMPLIFIER, MONOLITHIC SILICON
DRAWING APPROVAL DATE
92-08-06
AMSC N/A
REVISION LEVEL
E
SIZE
A
CAGE CODE
5962-91758
67268
SHEET
1
OF
15
DSCC FORM 2233
APR 97
5962-E458-01
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
F
91758
01
M
P
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
02
CLC420A
CLC420B
High speed, voltage feedback operational amplifier
High speed, voltage feedback operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
Package style
P
X
2
GDIP1-T8 or CDIP2-T8
GDFP1-G10
CQCC1-N20
8
10
20
Dual-in-line
Flat pack with gull wing leads
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
2
DSCC FORM 2234
APR 97
1.3 Absolute maximum ratings. 1/
Supply voltage (V±).................................................................................. ±7 V dc
Output current (I ) ............................................................................... 70 mA
OUT
Common mode input voltage (V )......................................................... V±
CM
Differential input voltage........................................................................... 10 V
Power dissipation (P )............................................................................. 112 mW
D
Junction temperature (T ) ....................................................................... +175°C
J
Storage temperature range...................................................................... -65°C to +150°C
Lead temperature (soldering, 10 seconds) .............................................. +300°C
Thermal resistance, junction-to-case (θ ):
JC
Case P.................................................................................................. 23°C/W
Case X.................................................................................................. 24°C/W
Case 2 .................................................................................................. 25°C/W
Thermal resistance, junction-to-ambient (θ ):
JA
Case P.................................................................................................. 125°C/W still air
72°C/W at 500 linear feet per minute (LFPM)
Case X.................................................................................................. 205°C/W still air
125°C/W at 500 linear feet per minute (LFPM)
Case 2 .................................................................................................. 100°C/W still air
68°C/W at 500 linear feet per minute (LFPM)
1.4 Recommended operating conditions.
Supply voltage (V±).................................................................................. ±5 V dc
Gain range (A )........................................................................................ ±1 to ±10
V
Ambient operating temperature (T )........................................................ -55°C to +125°C
A
1.5 Radiation features.
Maximum total dose available (dose rate = 50 to 300 rads (Si)/s)........... 300 Krads 2/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
3
DSCC FORM 2234
APR 97
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
-
Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the
full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
4
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Unit
Test
Symbol
Min
Max
Open loop characteristics
Input bias current
(noninverting)
1,2
3
All
All
01
-10
-20
+10
+20
+10
+10
+20
+10
+2.0
+3.5
+3.2
+2.0
+0.8
+1.8
+1.6
+0.8
60
µA
+I
IN
M,D,P,L,R,F
M,D,P,L,R,F
1
-10
Input bias current
(inverting)
1,2
3
-10
µA
-I
IN
-20
1
-10
Input offset voltage
1
-2.0
-3.5
-3.2
-2.0
-0.8
-1.8
-1.6
-0.8
mV
V
IO
2
3
M,D,P,L,R,F
1
1
02
2
3
M,D,P,L,R,F
5/ 6/
1
Average +input bias current
drift
2
All
All
nA/°C
nA/°C
µV/°C
µA
T
C
3
120
60
(+I
)
IN
Average -input bias current
drift
5/ 6/
5/ 6/
2
T
C
3
120
15
(-I
)
IN
Average input offset
voltage drift
2,3
01
02
All
T
C
10
(V
)
IO
Input offset current
1
2
3
1
1.0
I
IO
2.0
3.0
M,D,P,L,R,F
1.0
See footnotes at end of table.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Conditions
-55°C ≤ T ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Unit
A
Test
Symbol
Min
Max
Open loop characteristics – continued.
Average input offset
5/ 6/
2
3
All
All
10
20
nA/°C
T
C
current drift
(I
)
IO
Open loop gain
1,2
3
56
52
56
dB
A
OL
M,D,P,L,R,F
1
Quiescent supply current
(no load)
1,2,3
All
All
5.0
5.0
mA
dB
I
CC
M,D,P,L,R,F
V+ = +4.5 V to +5.0 V
V- = -4.5 V to –5.5 V
M,D,P,L,R,F
1
1,2
3
Power supply rejection
ratio
PSRR
CMRR
60
55
60
65
60
65
1
1
Common mode rejection
ratio
1,2
3
All
All
dB
V
CM
= ±1 V
M,D,P,L,R,F
1
Differential mode input
resistance
5/ 6/
4,5
6
MΩ
R
IND
0.5
Differential mode input
capacitance
5/ 6/
5/ 6/
4,5,6
All
All
2
2
pF
C
R
IND
Common mode input
resistance
4,5
6
0.5
MΩ
INC
0.25
Common mode input
capacitance
5/ 6/
4,5,6
All
pF
C
INC
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-91758
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Unit
Test
Symbol
Min
Max
Open loop characteristics - continued
Common mode input
5/ 6/
4,5
6
All
All
+2.8
+2.5
V
+V
CM
voltage
4,5
6
-2.8
-2.5
-V
CM
Output current
5/ 6/
4,5
6
+50
+30
mA
+I
OUT
4,5
6
-50
-30
0.2
0.3
-I
OUT
Output impedance
At dc 5/ 6/
4,5
6
All
All
Ω
R
OUT
Output voltage swing
No load 5/ 6/
1,2
3
+3
V
+V
O
+2.8
+2.5
+2.5
1,2,3
1
R = 100 Ω
L
M,D,P,L,R,F
No load 5/ 6/
1,2
3
-3
-V
O
-2.8
-2.5
-2.2
-2.5
1,2
3
R = 100 Ω
L
M,D,P,L,R,F
1
Frequency domain response
Gain flatness peaking
low
GFPL
At 0.1 MHz to 100 MHz, 5/
< 0.4 V
4
All
1.4
1.6
1.4
dB
5 7/
6 7/
V
OUT
PP
See footnotes at end of table.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-91758
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
7
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Unit
Test
Symbol
Min
Max
Frequency domain response – continued.
Gain flatness peaking
high
GFPH
GFR
At > 100 MHz, 5/
4
All
All
3.0
3.0
5.0
1.0
dB
dB
5 7/
6 7/
4,6
V
OUT
< 0.4 V
PP
Gain flatness rolloff
At 0.1 MHz to 5/ 6/
100 MHz,
5
4
2.0
1.4
1.6
1.4
V
< 0.4 V
PP
OUT
At 0.1 MHz to 30 MHz, 5/
5 7/
6 7/
4,6
5
A
V
= -1, R = 500 Ω,
F
V
< 0.4 V
OUT
PP
Small signal bandwidth
SSBW
-3 dB bandwidth 5/ 6/
< 0.4 V
All
200
130
65
MHz
V
OUT
PP
-3 dB bandwidth, 5/
4
5 7/
6 7/
4
45
A
V
= -1, R = 500 Ω,
F
V
65
< 0.4 V
OUT
PP
Large signal bandwidth
LSBW
-3 dB bandwidth 5/ 6/
< 5 V
All
25
MHz
5,6
4
20
V
OUT
PP
-3 dB bandwidth, 5/ 6/
35
5,6
30
A
V
= -1, R = 500 Ω,
F
V
< 5 V
OUT
PP
Linear phase deviation
LPD
HD2
At 0.1 MHz to 5/ 6/
4,6
5
All
All
1.8
2.5
Degrees
to 100 MHz
Distortion and noise
2 nd harmonic distortion
4,5,6
4
-40
-40
-40
dBc
2 V at 20 MHz 5/ 6/
PP
2 V at 20 MHz, 5/
PP
5,6 7/
A
V
= -1
See footnotes at end of table.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
8
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Min Max
Unit
Test
Symbol
Distortion and noise – continued.
3 rd harmonic distortion
HD3
4,6
5
All
-45
-40
-40
-35
-40
5.3
6
dBc
2 V at 20 MHz 5/ 6/
PP
4
2 V at 20 MHz, 5/
PP
5 7/
6 7/
4,6
5
A
V
= -1
Input referred noise
voltage
At 1 MHz to 5/ 6/
200 MHz
All
All
V
I
nV/ Hz
pA/ Hz
N
Input referred noise
current
At 1 MHz to 5/ 6/
20 MHz
4
2.6
2.3
2.9
2
CN
5
6
Rise and fall
TRS
TRL
TRS
0.4 V step, 5/ 6/
9,11
All
ns
C < 10 pF, measured
L
between 10% and 90%
points
10
3
5 V step, 5/ 6/
9,10
20
C < 10 pF, measured
L
between 10% and 90%
points
11
25
9,11
5.5
0.4 V step, A = -1, 5/ 6/
V
R = 500 Ω, C < 10 pF,
F
L
measured between 10%
and 90% points
10
9
7.8
9.5
TRL
5 V step, A = -1, 5/ 6/
V
R = 500 Ω, C < 10 pF,
F
L
measured between 10%
and 90% points
10,11
10
25
Settling time
2 V step at 0.01% of 5/ 6/
9,10,11
All
ns
t
S
the final value, C < 10 pF
L
2 V step at 0.1% of 5/ 6/
18
the final value, C < 10 pF
L
See footnotes at end of table.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
9
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/ 3/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits 4/
Unit
Test
Symbol
Min
Max
Time domain response – continued.
Overshoot
OS
0.4 V step, 5/ 6/
9,10
11
All
All
25
35
%
C < 10 pF,
L
Slew rate
+SR
Rising edge, 5/ 6/
9
750
600
V/µs
10,11
C < 10 pF, measured
L
±1 V with 5 V step
Rising edge, 5/ 6/
9
500
430
A
V
= -1, R = 500 Ω,
F
10,11
C < 10 pF, measured
L
±1 V with 5 V step
-SR
Falling edge, 5/ 6/
9
750
600
10,11
C < 10 pF, measured
L
±1 V with 5 V step
Falling edge, 5/ 6/
9
500
430
A
V
= -1, R = 500 Ω,
F
10,11
C < 10 pF, measured
L
±1 V with 5 V step
1/ Unless otherwise specified, V± = ±5 V dc, A = +1, load resistance (R ) = 100 Ω, tested parameters use R = 500 Ω,
V
L
S
otherwise, feedback resistance (R ) = 0 Ω.
F
2/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R, F of irradiation. However, this
device is only tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in table I.
When performing post irradiation electrical measurements for any RHA level, T = +25°C.
A
3/ These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A.
4/ The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in
this table. Negative current shall be defined as conventional current flow out of a device terminal.
5/ This parameter is not radiation hardened tested.
6/ If not tested, shall be guaranteed to the limits specified in table I herein.
7/ Group A testing only.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
10
DSCC FORM 2234
APR 97
Device types
01 and 02
Case outlines
P
X
2
Terminal number
Terminal symbol
1
2
NC
INPUT-
INPUT+
V-
NC
INPUT-
NC
NC
NC
3
NC
4
INPUT+
V-
NC
5
NC
OUTPUT
V+
NC
6
NC
INPUT-
NC
7
OUTPUT
NC
8
NC
---
INPUT+
V-
9
V+
10
11
12
13
14
15
16
17
18
19
20
---
NC
NC
---
---
NC
---
---
NC
---
---
NC
---
---
OUTPUT
NC
---
---
---
---
V+
---
---
NC
---
---
NC
---
---
NC
---
---
NC
NC = No connection
FIGURE 1. Terminal connections.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-91758
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
11
DSCC FORM 2234
APR 97
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015.
(2) T = +125°C, minimum.
A
b. Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table II herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
12
DSCC FORM 2234
APR 97
TABLE II. Electrical test requirements.
Subgroups
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
(in accordance with
MIL-PRF-38535, table III)
method 5005, table I)
Device
class M
Device
class Q
Device
class V
Interim electrical
---
---
---
parameters (see 4.2)
Final electrical
1,2,3,4 1/
1,2,3,4 1/
1,2,3,4 1/
parameters (see 4.2)
Group A test
requirements (see 4.4)
1,2,3,4,5,6,9,10,11
1,2,3,4,5,6,
9,10,11
1
1,2,3,4,5,6,
9,10,11
1
Group C end-point electrical
parameters (see 4.4)
1
1
1
Group D end-point electrical
parameters (see 4.4)
1
1
1
1
Group E end-point electrical
parameters (see 4.4)
1/ PDA applies to subgroup 1.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table II herein.
b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
b.
T = +125°C, minimum.
A
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-91758
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
13
DSCC FORM 2234
APR 97
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535 and the end-point electrical
parameters shall be as specified in table II herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A, and as specified herein.
4.4.4.1.1 Accelerated aging testing. Accelerated aging testing shall be performed on all devices requiring a RHA level
greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall
be the pre-irradiation end-point electrical parameter limits at 25°C ±5°C. Testing shall be performed at initial qualification and
after any design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
14
DSCC FORM 2234
APR 97
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
SIZE
STANDARD
5962-91758
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
F
15
DSCC FORM 2234
APR 97
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 01-06-14
Approved sources of supply for SMD 5962-91758 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9175801MPA
5962-9175801MXA
5962-9175801M2A
5962-9175802MPA
5962-9175802M2A
5962F9175801MPA
5962F9175801MXA
27014
27014
27014
27014
27014
27014
27014
CLC420AJ-QML
CLC420AWG-QML
CLC420AE-QML
CLC420BJ-QML
CLC420BE-QML
CLC420AJFQML
CLC420AWGFQML
1/ The lead finish shown for each PIN representing a hermetic
package is the most readily available from the manufacturer
listed for that part. If the desired lead finish is not listed,
contact the vendor to determine its availability.
2/ Caution. Do not use this number for item acquisition.
Items acquired to this number may not satisfy the
performance requirements of this drawing.
Vendor CAGE
number
Vendor name
and address
27014
National Semiconductor
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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